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On the FinFET extension implant energy

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.285-290

2003

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Implantation and transient boron diffusion: the role of the silicon self-interstitial

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.187-195

1995

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Laser Annealing of Semiconductors

Poate, J

1, 1982

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The effect of carbon on diffusion in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-01, Vol.36 (1-3), p.275-281

1996

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Ion beams in silicon processing and characterization

Journal of applied physics, 1997-05, Vol.81 (10), p.6513-6561

1997

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Ic Compatible Processing of Si:Er for optoelectronics

MRS proceedings, 1993, Vol.301, Article 87

1993

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Applied physics letters, 1996-01, Vol.68 (3), p.409-411

1996

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High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.416-419

1995

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Ion Implantation and Beam Processing

1, 1984

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High speed crystal growth and solidification using laser heating

Journal of crystal growth, 1986-12, Vol.79 (1), p.549-561

Poate, J.M.

1986

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Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.533-543

1991

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Applied physics letters, 1996-09, Vol.69 (10), p.1376-1378

1996

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Applied physics letters, 1997-06, Vol.70 (25), p.3332-3334

1997

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Iron gettering mechanisms in silicon

Journal of applied physics, 1996-09, Vol.80 (6), p.3275-3284

1996

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Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied physics letters, 1997-06, Vol.70 (24), p.3281-3283

1997

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The effects of nucleation and growth on epitaxy in the CoSi2/Si system

Thin solid films, 1982-07, Vol.93 (1-2), p.99-108

1982

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Implant damage and transient enhanced diffusion in Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-12, Vol.106 (1), p.191-197

1995

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Transient enhanced diffusion from decaborane molecular ion implantation

Applied physics letters, 1998-10, Vol.73 (14), p.2015-2017

1998

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Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

Physical review letters, 1984-06, Vol.52 (26), p.2360-2363

1984

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The mechanism of iron gettering in boron-doped silicon

Applied physics letters, 1996-01, Vol.68 (1), p.51-53

1996

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Early MRS Success Stimulated by Integrated Circuit Industry

MRS bulletin, 1993-07, Vol.18 (7), p.77-78

Poate, J.M.

1993

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Structural and compositional changes in ion-bombarded Ta2O5

Surface science, 1979-03, Vol.81 (2), p.571-588

1979

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The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

Applied physics letters, 1997-06, Vol.70 (22), p.3002-3004

1997

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On the FinFET extension implant energy

Implantation and transient boron diffusion: the role of the silicon self-interstitial

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Laser Annealing of Semiconductors

The effect of carbon on diffusion in silicon

Ion beams in silicon processing and characterization

Ic Compatible Processing of Si:Er for optoelectronics

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology

Ion Implantation and Beam Processing

High speed crystal growth and solidification using laser heating

Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties

The interstitial fraction of diffusivity of common dopants in Si

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Iron gettering mechanisms in silicon

Transient enhanced diffusion of Sb and B due to MeV silicon implants

The effects of nucleation and growth on epitaxy in the CoSi2/Si system

Implant damage and transient enhanced diffusion in Si

Transient enhanced diffusion from decaborane molecular ion implantation

Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

The mechanism of iron gettering in boron-doped silicon

Early MRS Success Stimulated by Integrated Circuit Industry

Structural and compositional changes in ion-bombarded Ta2O5

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

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