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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Implantation and transient B diffusion in Si: The source of the interstitials

Applied physics letters, 1994-10, Vol.65 (18), p.2305-2307

1994

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Ion beams in silicon processing and characterization

Journal of applied physics, 1997-05, Vol.81 (10), p.6513-6561

1997

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied physics letters, 1997-04, Vol.70 (17), p.2285-2287

1997

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Evolution from point to extended defects in ion implanted silicon

Journal of applied physics, 1997-07, Vol.82 (1), p.120-125

1997

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Applied physics letters, 1996-01, Vol.68 (3), p.409-411

1996

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Density of amorphous Si

Applied physics letters, 1994-01, Vol.64 (4), p.437-439

1994

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On the FinFET extension implant energy

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.285-290

2003

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Applied physics letters, 1995-03, Vol.66 (11), p.1370-1372

1995

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Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Journal of applied physics, 1991-09, Vol.70 (5), p.2672-2678

1991

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Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity

Physical review letters, 1993-07, Vol.71 (4), p.517-520

1993

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Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

Journal of applied physics, 1985-01, Vol.57 (6), p.1795-1804

1985

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The electrical and defect properties of erbium-implanted silicon

Journal of applied physics, 1991-09, Vol.70 (5), p.2667-2671

1991

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Optical doping of waveguide materials by MeV Er implantation

Journal of applied physics, 1991-10, Vol.70 (7), p.3778-3784

1991

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Microstructure of erbium-implanted Si

Applied physics letters, 1991-06, Vol.58 (24), p.2797-2799

1991

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Applied physics letters, 1995-01, Vol.66 (5), p.568-570

1995

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Applied physics letters, 1993-08, Vol.63 (5), p.639-641

1993

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Iron gettering mechanisms in silicon

Journal of applied physics, 1996-09, Vol.80 (6), p.3275-3284

1996

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Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

Applied physics letters, 1992-09, Vol.61 (12), p.1381-1383

1992

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Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

Physical review letters, 1984-06, Vol.52 (26), p.2360-2363

1984

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The precipitation of Fe at the Si–SiO2 interface

Journal of applied physics, 1998-01, Vol.83 (1), p.580-584

1998

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Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied physics letters, 1997-06, Vol.70 (24), p.3281-3283

1997

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Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode

Applied physics letters, 1994-05, Vol.64 (21), p.2842-2844

1994

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Formation of extended defects in silicon by high energy implantation of B and P

Journal of applied physics, 1996-08, Vol.80 (4), p.2105-2112

1996

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Implantation and transient B diffusion in Si: The source of the interstitials

Ion beams in silicon processing and characterization

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Evolution from point to extended defects in ion implanted silicon

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Density of amorphous Si

On the FinFET extension implant energy

Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

The electrical and defect properties of erbium-implanted silicon

Optical doping of waveguide materials by MeV Er implantation

The interstitial fraction of diffusivity of common dopants in Si

Microstructure of erbium-implanted Si

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Iron gettering mechanisms in silicon

Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

The precipitation of Fe at the Si–SiO2 interface

Transient enhanced diffusion of Sb and B due to MeV silicon implants

Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode

Formation of extended defects in silicon by high energy implantation of B and P

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