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III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

Nano letters, 2012-07, Vol.12 (7), p.3592-3595

2012

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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

Nano letters, 2012-08, Vol.12 (8), p.4140-4145

2012

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Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors

Journal of physics. D, Applied physics, 2011-02, Vol.44 (7), p.075102

2011

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Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

Nano letters, 2012-04, Vol.12 (4), p.2060-2066

2012

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Dark current reduction in InAs/InAsSb superlattice mid-wave infrared detectors through restoration etch

Electronics letters, 2015-11, Vol.51 (24), p.2009-2010

2015

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Surface Charge Transfer Doping of III–V Nanostructures

Journal of physical chemistry. C, 2013-08, Vol.117 (34), p.17845-17849

2013

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Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Influence of composition in InAs/GaSb type‐II superlattices on their optical properties

Electronics letters, 2014-11, Vol.50 (23), p.1733-1734

2014

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Growth of InAs–InAsSb SLS through the use of digital alloys

Journal of crystal growth, 2015-09, Vol.425, p.29-32

2015

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Performance modeling of MWIR InAs GaSb B-Al0.2Ga0.8Sb type-II superlattice nBn detector

Semiconductor science and technology, 2012-03, Vol.27 (5)

2012

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Space Weathering Experiments on Spacecraft Materials

The Journal of the astronautical sciences, 2019-06, Vol.66 (2), p.210-223

2019

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Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

Applied physics letters, 2010-10, Vol.97 (14), p.143512-143512-3

2010

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Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

Semiconductor science and technology, 2010-08, Vol.25 (8), p.085010-085010

2010

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Gallium free type II InAs/InAsxSb1-x superlattice photodetectors

Applied physics letters, 2012-08, Vol.101 (7), p.71111

2012

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Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

Journal of applied physics, 2008-12, Vol.104 (12)

2008

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Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Applied physics letters, 2011-09, Vol.99 (10), p.103507-103507-3

2011

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Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Infrared physics & technology, 2011-05, Vol.54 (3), p.252-257

2011

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Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

IEEE photonics journal, 2011-04, Vol.3 (2), p.234-240

2011

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Voltage controllable dual-band response from InAs/GaSb strained layer superlattice detectors with nBn design

Electronics letters, 2011-01, Vol.47 (2), p.133-134

2011

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High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

IEEE electron device letters, 2013-03, Vol.34 (3), p.426-428

2013

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Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

Journal of crystal growth, 2009-03, Vol.311 (7), p.1901-1904

2009

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GaN-based high voltage transistors for efficient power switching

Physica status solidi. C, 2013-05, Vol.10 (5), p.831-834

2013

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Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation

Infrared physics & technology, 2012-03, Vol.55 (2-3), p.216-219

2012

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III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors

Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

Dark current reduction in InAs/InAsSb superlattice mid-wave infrared detectors through restoration etch

Surface Charge Transfer Doping of III–V Nanostructures

Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

Influence of composition in InAs/GaSb type‐II superlattices on their optical properties

Growth of InAs–InAsSb SLS through the use of digital alloys

Performance modeling of MWIR InAs GaSb B-Al0.2Ga0.8Sb type-II superlattice nBn detector

Space Weathering Experiments on Spacecraft Materials

Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

Gallium free type II InAs/InAsxSb1-x superlattice photodetectors

Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

Voltage controllable dual-band response from InAs/GaSb strained layer superlattice detectors with nBn design

High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

GaN-based high voltage transistors for efficient power switching

Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation

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