UB Paderborn / Katalog / Suche / in CDI

Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes

Applied physics letters, 2002-12, Vol.81 (25), p.4757-4759

2002

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Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

Nanotechnology, 2013-01, Vol.24 (2), p.025601-025601

2013

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Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air

Sensors and actuators. B, Chemical, 2011-03, Vol.152 (2), p.235-240

2011

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Enhanced mechanical performance of AlN nanodiamond micro-resonators

Journal of micromechanics and microengineering, 2013-12, Vol.23 (12), p.125017-6

2013

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Development of a high transconductance GaN MMIC technology for millimeter wave applications

Physica status solidi. C, 2011-02, Vol.8 (2), p.297-299

2011

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Elastic properties of ultrathin diamond/AlN membranes

Thin solid films, 2014-05, Vol.558, p.267-271

2014

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CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors

Journal of biotechnology, 2013-02, Vol.163 (4), p.354-361

2013

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Transparent diamond electrodes for tunable micro-optical devices

Diamond and related materials, 2013-09, Vol.38, p.101-103

2013

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Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

IEEE photonics journal, 2013-12, Vol.5 (6), p.8400709-8400709

2013

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High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

Applied physics letters, 1997-12, Vol.71 (22), p.3251-3253

1997

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Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

Applied physics letters, 2000-09, Vol.77 (11), p.1659-1661

2000

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Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.1018-1024

2007

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Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers

Applied physics letters, 2002-06, Vol.80 (22), p.4085-4087

2002

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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Microelectronics and reliability, 2009-05, Vol.49 (5), p.474-477

2009

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A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

IEEE microwave and wireless components letters, 2005-07, Vol.15 (7), p.460-462

2005

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High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures

IEEE photonics technology letters, 1998-05, Vol.10 (5), p.654-656

1998

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Single Chip White LEDs

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.246-253

2002

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Near-UV LEDs for integrated InO-based ozone sensors

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2177-2179

2010

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Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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QWIP FPAs for high-performance thermal imaging

Physica. E, Low-dimensional systems & nanostructures, 2000-04, Vol.7 (1), p.101-107

2000

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Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

Applied physics letters, 2007-09, Vol.91 (10)

2007

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25-W CW high-brightness tapered semiconductor laser-array

IEEE photonics technology letters, 1999-04, Vol.11 (4), p.412-414

1999

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Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

Journal of electronic materials, 1995-11, Vol.24 (11), p.1531-1534

1995

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Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method

Journal of applied physics, 2010-03, Vol.107 (5)

2010

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Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance

Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air

Enhanced mechanical performance of AlN nanodiamond micro-resonators

Development of a high transconductance GaN MMIC technology for millimeter wave applications

Elastic properties of ultrathin diamond/AlN membranes

CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors

Transparent diamond electrodes for tunable micro-optical devices

Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs

Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures

Single Chip White LEDs

Near-UV LEDs for integrated InO-based ozone sensors

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

QWIP FPAs for high-performance thermal imaging

Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

25-W CW high-brightness tapered semiconductor laser-array

Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method

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