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Microcanonical Entropy of the Infinite-State Potts Model

Physics research international, 2011, Vol.2011 (2011), p.1-5

2011

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Deep learning for inverse problems in quantum mechanics

International journal of quantum chemistry, 2021-05, Vol.121 (9), p.n/a

2021

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Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications

Small (Weinheim an der Bergstrasse, Germany), 2020-07, Vol.16 (30), p.e1907364-n/a

2020

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Two-dimensional electron gas at wurtzite–zinc-blende InP interfaces induced by modulation doping

Applied physics letters, 2020-06, Vol.116 (23)

2020

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Atomically sharp, crystal phase defined GaAs quantum dots

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Design for strong absorption in a nanowire array tandem solar cell

Scientific reports, 2016-08, Vol.6 (1), p.32349-32349, Article 32349

2016

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Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Physical review. B, Condensed matter and materials physics, 2014-04, Vol.89 (16), Article 165423

2014

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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

Nano letters, 2010-10, Vol.10 (10), p.4080-4085

2010

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Temperature dependent electronic band structure of wurtzite GaAs nanowires

Nanoscale, 2018-01, Vol.1 (3), p.1481-1486

2018

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Increased absorption in InAsSb nanowire clusters through coupled optical modes

Applied physics letters, 2017-02, Vol.110 (8)

2017

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GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

Nano research, 2014-04, Vol.7 (4), p.473-490

2014

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Direct Measure of Strain and Electronic Structure in GaAs/GaP Core−Shell Nanowires

Nano letters, 2010-03, Vol.10 (3), p.880-886

2010

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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Considering Symmetry Properties of InP Nanowire/Light Incidence Systems to Gain Broadband Absorption

IEEE photonics journal, 2017, Vol.9 (3), p.1-10

2017

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Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling

Nanotechnology, 2016-10, Vol.27 (43), p.435404-435404

2016

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Coarse-grained tight-binding models

Journal of physics. Condensed matter, 2022-03, Vol.34 (12), p.125901

2022

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Confinement effects on Brillouin scattering in semiconductor nanowire photonic crystal

Physical review. B, 2016-07, Vol.94 (2), Article 024115

2016

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N-representability of two-electron densities and density matrices and the application to the few-body problem

Chemical physics letters, 2004-12, Vol.400 (4), p.548-552

Pistol, Mats-Erik

2004

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Time-resolved photoluminescence studies of single interface wurtzite/zincblende heterostructured InP nanowires

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Speeding up tight binding calculations using zone-folding methods

Computational materials science, 2022-08, Vol.211, p.111479, Article 111479

2022

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Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

Nanotechnology, 2018-01, Vol.29 (4), p.045401-045401

2018

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Non-resonant Raman scattering of wurtzite GaAs and InP nanowires

Optics express, 2020-04, Vol.28 (8), p.11016-11022

2020

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Single quantum dots emit single photons at a time: Antibunching experiments

Applied physics letters, 2001-04, Vol.78 (17), p.2476-2478

2001

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Confinement in Thickness-Controlled GaAs Polytype Nanodots

Nano letters, 2015-04, Vol.15 (4), p.2652-2656

2015

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Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy

Nano research, 2011-02, Vol.4 (2), p.159-163

2011

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Microcanonical Entropy of the Infinite-State Potts Model

Deep learning for inverse problems in quantum mechanics

Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications

Two-dimensional electron gas at wurtzite–zinc-blende InP interfaces induced by modulation doping

Atomically sharp, crystal phase defined GaAs quantum dots

Design for strong absorption in a nanowire array tandem solar cell

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

Temperature dependent electronic band structure of wurtzite GaAs nanowires

Increased absorption in InAsSb nanowire clusters through coupled optical modes

GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

Direct Measure of Strain and Electronic Structure in GaAs/GaP Core−Shell Nanowires

Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

Considering Symmetry Properties of InP Nanowire/Light Incidence Systems to Gain Broadband Absorption

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling

Coarse-grained tight-binding models

Confinement effects on Brillouin scattering in semiconductor nanowire photonic crystal

N-representability of two-electron densities and density matrices and the application to the few-body problem

Time-resolved photoluminescence studies of single interface wurtzite/zincblende heterostructured InP nanowires

Speeding up tight binding calculations using zone-folding methods

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

Non-resonant Raman scattering of wurtzite GaAs and InP nanowires

Single quantum dots emit single photons at a time: Antibunching experiments

Confinement in Thickness-Controlled GaAs Polytype Nanodots

Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy

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