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Synthesis and Characterization of Discrete Luminescent Erbium-Doped Silicon Nanocrystals

Journal of the American Chemical Society, 1999-03, Vol.121 (9), p.1888-1892

1999

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Effect of implantation current density and anneal time on the microstructure of SIMOX

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-05, Vol.56, p.668-671

1991

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Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

Electronics letters, 1981-01, Vol.17 (10), p.356-358

1981

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Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.547-553

1982

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Microstructural analysis of nickel silicide formed by nickel/silicon-on-oxide annealing

Applied physics letters, 1993-05, Vol.62 (21), p.2694-2696

1993

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Formation of metallic, crystalline NiSi[sub 2] thin film on amorphous SiO[sub 2]/Si

Journal of applied physics, 1993-04, Vol.73:8

1993

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Surface Characterization of Amalgams Using X-ray Photoelectron Spectroscopy

Journal of dental research, 1987-09, Vol.66 (9), p.1470-1478

1987

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Silicon Nanostructures in Si-Based Light-Emithing Devices

MRS proceedings, 1993, Vol.298, Article 343

1993

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Silicon Nanostructures in Si-Based Light-Emithing Devicesa

MRS proceedings, 1993, Vol.298

1993

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Carbon and the Kinetics of Oxygen Precipitation in Silicon

MRS proceedings, 1982, Vol.14, Article 147

1982

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An examination of the interfacial interactions between quantum-confined cadmium sulfide clusters and aminocalixarene stabilizer molecules

Journal of physical chemistry (1952), 1993, Vol.97 (3), p.696-702

1993

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Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process

MRS proceedings, 1989, Vol.157

1989

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Effect of Oxygen Implantation Conditions on Buried Si0 2 Layer Formation using a Multiple Step Process

MRS proceedings, 1989, Vol.157, Article 179

1989

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Silicon-on-insulator by oxygen ion implantation

Journal of crystal growth, 1983-01, Vol.63 (3), p.554-558

1983

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Anisotropic Transport of Impurities in Ion Mixing

MRS proceedings, 1983, Vol.27, Article 43

1983

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The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation

MRS proceedings, 1981, Vol.7, Article 401

1981

Volltextzugriff (PDF)

Stacked CMOS SRAM cell

IEEE electron device letters, 1983-08, Vol.4 (8), p.272-274

1983

Volltextzugriff (PDF)

Device fabrication in silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique

IEEE transactions on electron devices, 1982-01, Vol.29 (3), p.389-394

1982

Volltextzugriff (PDF)

Thermal annealing behavior of an oxide layer under silicon

Applied physics letters, 1982-12, Vol.41 (12), p.1143-1145

1982

Volltextzugriff (PDF)

p-Channel MOSFET's in LPCVD PolySilicon

IEEE electron device letters, 1983-10, Vol.4 (10), p.369-371

1983

Volltextzugriff (PDF)

Edge-defined self-alignment of submicrometer overlaid devices

IEEE electron device letters, 1984-10, Vol.5 (10), p.428-429

1984

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Composite TiSi/sub 2//n+ Poly-Si Low-Resistivity Gate Electrode and Interconnect for VLSI Device Technology

IEEE journal of solid-state circuits, 1982-04, Vol.17 (2), p.177-183

1982

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Composite TiSi 2 /n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.547-553

1982

Volltextzugriff (PDF)

VB-3 stacked CMOS sRAM cell

IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1604-1604

1983

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Cross-Sectional Tem Characterization of Structural Changes Produced In Silicon By One Micron Picosecond Pulses

MRS proceedings, 1985, Vol.51, Article 213

1985

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Synthesis and Characterization of Discrete Luminescent Erbium-Doped Silicon Nanocrystals

Effect of implantation current density and anneal time on the microstructure of SIMOX

Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

Microstructural analysis of nickel silicide formed by nickel/silicon-on-oxide annealing

Formation of metallic, crystalline NiSi[sub 2] thin film on amorphous SiO[sub 2]/Si

Surface Characterization of Amalgams Using X-ray Photoelectron Spectroscopy

Silicon Nanostructures in Si-Based Light-Emithing Devices

Silicon Nanostructures in Si-Based Light-Emithing Devicesa

Carbon and the Kinetics of Oxygen Precipitation in Silicon

An examination of the interfacial interactions between quantum-confined cadmium sulfide clusters and aminocalixarene stabilizer molecules

Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process

Effect of Oxygen Implantation Conditions on Buried Si0 2 Layer Formation using a Multiple Step Process

Silicon-on-insulator by oxygen ion implantation

Anisotropic Transport of Impurities in Ion Mixing

The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation

Stacked CMOS SRAM cell

Device fabrication in silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique

Thermal annealing behavior of an oxide layer under silicon

p-Channel MOSFET's in LPCVD PolySilicon

Edge-defined self-alignment of submicrometer overlaid devices

Composite TiSi/sub 2//n+ Poly-Si Low-Resistivity Gate Electrode and Interconnect for VLSI Device Technology

Composite TiSi 2 /n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

VB-3 stacked CMOS sRAM cell

Cross-Sectional Tem Characterization of Structural Changes Produced In Silicon By One Micron Picosecond Pulses

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