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A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing

Advanced functional materials, 2021-06, Vol.31 (23), p.n/a

2021

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Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

Nature communications, 2021-01, Vol.12 (1), p.655-655, Article 655

2021

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2D Janus Polarization Functioned by Mechanical Force

Advanced materials (Weinheim), 2024-07, Vol.36 (30), p.e2403929-n/a

2024

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Hydrogenation Dynamics of Electrically Controlled Metal–Insulator Transition in Proton‐Gated Transparent and Flexible WO3 Transistors

Advanced functional materials, 2019-08, Vol.29 (34), p.n/a

2019

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Coupling of ferroelectric and valley properties in 2D materials

Journal of applied physics, 2022-09, Vol.132 (12)

2022

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Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta2NiS5 Photodetector

Advanced science, 2023-07, Vol.10 (20), p.n/a

2023

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Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures

Applied physics letters, 2019-03, Vol.114 (10)

2019

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Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Advanced materials (Weinheim), 2011-12, Vol.23 (48), p.5822-5827

2011

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Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure

Journal of applied physics, 2016-12, Vol.120 (23)

2016

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Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy

AIP advances, 2017-09, Vol.7 (9), p.095116-095116-7

2017

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Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor

Advanced optical materials, 2024-05, Vol.12 (14), p.n/a

2024

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Strain-engineering on GeSe: Raman spectroscopy study

Physical chemistry chemical physics : PCCP, 2021-12, Vol.23 (47), p.26997-274

2021

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Realizing metallicity in Sr2IrO4 thin films by high-pressure oxygen annealing

NPG Asia materials, 2023-08, Vol.15 (1), p.43-7, Article 43

2023

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A Mott transistor with giant switching ratio at room temperature and its emulation of artificial synapses

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-08, Vol.1 (32), p.11654-11663

2022

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Mediation in the second-order synaptic emulator with conductive atomic force microscopy

Nanoscale, 2019-05, Vol.11 (18), p.8744-8751

2019

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Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films

Journal of applied physics, 2015-09, Vol.118 (10)

2015

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Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Advanced materials (Weinheim), 2013-04, Vol.25 (15), p.2158-2161

2013

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Fabrication and thermoelectric properties of Ca3Co4O9/Ag composites

Journal of alloys and compounds, 2008-04, Vol.454 (1-2), p.364-369

2008

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Erratum: “Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy” [AIP Adv. 7, 095116 (2017)]

AIP advances, 2022-05, Vol.12 (5), p.059901-059901-1

2022

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Proton‐Mediated Phase Control in Flexible and Transparent Mott Transistors

Advanced electronic materials, 2020-01, Vol.6 (1), p.n/a

2020

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Raman Spectra of Bulk and Few-Layer GeSe From First-Principles Calculations

Frontiers in materials, 2021-09, Vol.8

2021

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Fabrication of graphene-fullerene hybrid by self-assembly and its application as support material for methanol electrocatalytic oxidation reaction

Applied surface science, 2018-05, Vol.440, p.477-483

2018

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Nonvolatile Negative Optoelectronic Memory Based on Ferroelectric Thin Films

ACS applied electronic materials, 2020-04, Vol.2 (4), p.1035-1040

2020

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High-speed ultraviolet photodetectors based on 2D layered CuInP2S6 nanoflakes

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Van der Waals epitaxy for high-quality flexible VO2 film on mica substrate

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing

Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

2D Janus Polarization Functioned by Mechanical Force

Hydrogenation Dynamics of Electrically Controlled Metal–Insulator Transition in Proton‐Gated Transparent and Flexible WO3 Transistors

Coupling of ferroelectric and valley properties in 2D materials

Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta2NiS5 Photodetector

Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures

Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure

Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy

Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor

Strain-engineering on GeSe: Raman spectroscopy study

Realizing metallicity in Sr2IrO4 thin films by high-pressure oxygen annealing

A Mott transistor with giant switching ratio at room temperature and its emulation of artificial synapses

Mediation in the second-order synaptic emulator with conductive atomic force microscopy

Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films

Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Fabrication and thermoelectric properties of Ca3Co4O9/Ag composites

Erratum: “Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy” [AIP Adv. 7, 095116 (2017)]

Proton‐Mediated Phase Control in Flexible and Transparent Mott Transistors

Raman Spectra of Bulk and Few-Layer GeSe From First-Principles Calculations

Fabrication of graphene-fullerene hybrid by self-assembly and its application as support material for methanol electrocatalytic oxidation reaction

Nonvolatile Negative Optoelectronic Memory Based on Ferroelectric Thin Films

High-speed ultraviolet photodetectors based on 2D layered CuInP2S6 nanoflakes

Van der Waals epitaxy for high-quality flexible VO2 film on mica substrate

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