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Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

ACS applied materials & interfaces, 2018-07, Vol.10 (28), p.24302-24309

2018

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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer

ACS applied materials & interfaces, 2021-04, Vol.13 (15), p.18264-18273

2021

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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiN x Passivation Layer

ACS applied materials & interfaces, 2021-04, Vol.13 (15), p.18264-18273

2021

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Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs

Journal of crystal growth, 2019-07, Vol.517, p.28-34

2019

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Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

IEEE electron device letters, 2008-11, Vol.29 (11), p.1196-1198

2008

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Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition

Journal of materials science, 2024-04, Vol.59 (16), p.6835-6848

2024

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Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1467-1472

2015

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Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

ACS applied electronic materials, 2019-08, Vol.1 (8), p.1387-1399

2019

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RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon

IEEE transactions on microwave theory and techniques, 2017-05, Vol.65 (5), p.1465-1470

2017

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Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

IEEE electron device letters, 2009-10, Vol.30 (10), p.1015-1017

2009

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HAADF-STEM Study of Filament Material in Hot Filament CVD Diamond Films

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.1788-1789

2019

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Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2010-04, Vol.31 (4), p.302-304

2010

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N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

IEEE electron device letters, 2009-02, Vol.30 (2), p.113-116

2009

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Observation of terahertz radiation coherently generated by acoustic waves

Nature physics, 2009-04, Vol.5 (4), p.285-288

2009

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Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

IEEE electron device letters, 2010-07, Vol.31 (7), p.668-670

2010

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PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1082-1087

2013

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Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping

Journal of physics. D, Applied physics, 2017-06, Vol.50 (24), p.24

2017

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

IEEE electron device letters, 2010-04, Vol.31 (4), p.296-298

2010

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3197-3203

2013

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Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding

IEEE electron device letters, 2011-07, Vol.32 (7), p.895-897

2011

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Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

68th Device Research Conference, 2010, p.193-194

2010

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AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

IEEE electron device letters, 2010-01, Vol.31 (1), p.5-7

2010

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Preferentially oriented growth of diamond films on silicon with nickel interlayer

SN applied sciences, 2022-08, Vol.4 (8), p.1-16, Article 226

2022

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Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-09, Vol.41 (5)

2023

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Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer

Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiN x Passivation Layer

Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition

Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

HAADF-STEM Study of Filament Material in Hot Filament CVD Diamond Films

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

Observation of terahertz radiation coherently generated by acoustic waves

Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping

107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding

Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

Preferentially oriented growth of diamond films on silicon with nickel interlayer

Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates

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