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Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

IEEE electron device letters, 2008-11, Vol.29 (11), p.1196-1198

2008

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Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

Applied physics letters, 2004-10, Vol.85 (14), p.2962-2964

2004

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Phase separation in InGaN grown by metalorganic chemical vapor deposition

Applied physics letters, 1998-01, Vol.72 (1), p.40-42

1998

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Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

IEEE electron device letters, 2009-10, Vol.30 (10), p.1015-1017

2009

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IEEE_Xplore

12 W/mm AlGaN-GaN HFETs on silicon substrates

IEEE electron device letters, 2004-07, Vol.25 (7), p.459-461

2004

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IEEE_Xplore

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

IEEE electron device letters, 2009-12, Vol.30 (12), p.1254-1256

2009

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IEEE_Xplore

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

IEEE electron device letters, 2009-02, Vol.30 (2), p.113-116

2009

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IEEE_Xplore

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

Applied physics letters, 2007-12, Vol.91 (25)

2007

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Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

Applied physics letters, 1999-10, Vol.75 (15), p.2202-2204

1999

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Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

Applied physics letters, 2007-09, Vol.91 (11)

2007

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Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Journal of electronic materials, 2001-04, Vol.30 (4), p.439-444

2001

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Gallium nitride surface quantum wells

Applied physics letters, 2005-11, Vol.87 (19), p.192117-192117-3

2005

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Effect of hydrogen on the indium incorporation in InGaN epitaxial films

Applied physics letters, 1997-01, Vol.70 (4), p.461-463

1997

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Reliability of large periphery GaN-on-Si HFETs

Microelectronics and reliability, 2006-08, Vol.46 (8), p.1247-1253

2006

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An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

Journal of applied physics, 2004-06, Vol.95 (12), p.7982-7989

2004

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Growth and characterization of AlInGaN quaternary alloys

Applied physics letters, 1996-01, Vol.68 (1), p.40-42

1996

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Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

Journal of electronic materials, 2008-05, Vol.37 (5), p.550-553

2008

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Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Applied physics letters, 2018-04, Vol.112 (18)

2018

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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

Applied physics letters, 2005-06, Vol.86 (25), p.253502-253502-3

2005

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A magnetotransport study of AlGaN/GaN heterostructures on silicon

Journal of electronic materials, 2005-04, Vol.34 (4), p.444-449

2005

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Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Applied physics letters, 1997-10, Vol.71 (14), p.2023-2025

1997

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Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

Journal of applied physics, 1999-07, Vol.86 (1), p.281-288

1999

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Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2486-2488

2011

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High quality InGaN films by atomic layer epitaxy

Applied physics letters, 1995-09, Vol.67 (13), p.1856-1858

1995

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Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied physics letters, 2007-04, Vol.90 (15), p.151116-151116-3

2007

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Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

Phase separation in InGaN grown by metalorganic chemical vapor deposition

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

12 W/mm AlGaN-GaN HFETs on silicon substrates

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Gallium nitride surface quantum wells

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

Reliability of large periphery GaN-on-Si HFETs

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

Growth and characterization of AlInGaN quaternary alloys

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

A magnetotransport study of AlGaN/GaN heterostructures on silicon

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

High quality InGaN films by atomic layer epitaxy

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

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