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Sol–gel matrix for YAG:Ce phosphors in pc-LEDs

Journal of sol-gel science and technology, 2021-02, Vol.97 (2), p.458-465

2021

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ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

Chemical vapor deposition, 2009-03, Vol.15 (1-3), p.27-32

2009

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Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films

Chemistry of materials, 2004-11, Vol.16 (24), p.5162-5168

2004

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Study of a novel ALD process for depositing MgF2 thin films

Journal of materials chemistry, 2007-01, Vol.17 (48), p.5077-5083

2007

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Novel ALD Process for Depositing CaF2 Thin Films

Chemistry of materials, 2007-07, Vol.19 (14), p.3387-3392

2007

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Free-standing inductive grid filter for infrared radiation rejection

Microelectronic engineering, 2006-04, Vol.83 (4), p.1339-1342

2006

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Advanced thin film technology for ultrahigh resolution X-ray microscopy

Ultramicroscopy, 2009-10, Vol.109 (11), p.1360-1364

2009

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Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films

Applied optics (2004), 2008-05, Vol.47 (13), p.C271-C274

2008

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Atomic Layer Deposition of MgF2 Thin Films Using TaF5 as a Novel Fluorine Source

Chemistry of materials, 2008-08, Vol.20 (15), p.5023-5028

2008

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Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water

Thin solid films, 2005-11, Vol.491 (1), p.328-338

2005

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Atomic Layer Deposition of MgF 2 Thin Films Using TaF 5 as a Novel Fluorine Source

Chemistry of materials, 2008-08, Vol.20 (15), p.5023-5028

2008

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Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

Chemical vapor deposition, 2008-04, Vol.14 (3-4), p.85-91

2008

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New octahedral Ta(V) hydrazido-substituted compounds for atomic layer deposition: Syntheses, X-ray diffraction structures of TaCl(NMe 2) 3[N(TMS)NMe 2] and Ta(NMe 2) 4[N(TMS)NMe 2], and fluxional behavior of the amido and hydrazido ligands in solution

Polyhedron, 2010-05, Vol.29 (7), p.1754-1759

2010

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Novel ALD Process for Depositing CaF 2 Thin Films

Chemistry of materials, 2007-07, Vol.19 (14), p.3387-3392

2007

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New octahedral Ta(V) hydrazido-substituted compounds for atomic layer deposition: Syntheses, X-ray diffraction structures of TaCl(NMe2)(3)[N(TMS)NMe2] and Ta(NMe2)(4)[N(TMS)NMe2], and fluxional behavior of the amido and hydrazido ligands in solution

Polyhedron, 2010-05, Vol.29 (7)

2010

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ALD of YF 3 Thin Films from TiF 4 and Y(thd) 3 Precursors

Chemical vapor deposition, 2009-03, Vol.15 (1-3), p.27-32

2009

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(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium

Journal of materials chemistry, 2010-09, Vol.20 (36), p.7669-7675

2010

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Erratum to “advanced thin film technology for ultrahigh resolution X-ray microscopy” [Ultramicroscopy 109 (2009) 1360–1364]

Ultramicroscopy, 2010, Vol.110 (2), p.176-176

2010

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Atomic Layer Deposition of LaF 3 Thin Films using La(thd) 3 and TiF 4 as Precursors

Chemical vapor deposition, 2008-04, Vol.14 (3-4), p.85-91

2008

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Atomic layer deposition rate, phase composition and performance of HfO 2 films on noble metal and alkoxylated silicon substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1), p.112-116

2005

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High Spatial Resolution STXM at 6.2 keV Photon Energy

AIP conference proceedings, 2010, Vol.1221 (1)

2010

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Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1-3), p.112-116

2005

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High Spatial Resolution STXM at 6.2 keV Photon Energy

Proceedings of the 20th International Congress, 2009-09, Vol.1221, p.80-84

2009

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(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridiumCCDC reference number 767385. For crystallographic data in CIF or other electronic format see DOI: 10.1039/c0jm00486c

2010-08

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Atomic layer deposition process with TiF_4 as a precursor for depositing metal fluoride thin films

Applied Optics, 2008-05, Vol.47 (13), p.C271

2008

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Weitere Dienste

Einstellungen

Sol–gel matrix for YAG:Ce phosphors in pc-LEDs

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films

Study of a novel ALD process for depositing MgF2 thin films

Novel ALD Process for Depositing CaF2 Thin Films

Free-standing inductive grid filter for infrared radiation rejection

Advanced thin film technology for ultrahigh resolution X-ray microscopy

Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films

Atomic Layer Deposition of MgF2 Thin Films Using TaF5 as a Novel Fluorine Source

Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water

Atomic Layer Deposition of MgF 2 Thin Films Using TaF 5 as a Novel Fluorine Source

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

New octahedral Ta(V) hydrazido-substituted compounds for atomic layer deposition: Syntheses, X-ray diffraction structures of TaCl(NMe 2) 3[N(TMS)NMe 2] and Ta(NMe 2) 4[N(TMS)NMe 2], and fluxional behavior of the amido and hydrazido ligands in solution

Novel ALD Process for Depositing CaF 2 Thin Films

New octahedral Ta(V) hydrazido-substituted compounds for atomic layer deposition: Syntheses, X-ray diffraction structures of TaCl(NMe2)(3)[N(TMS)NMe2] and Ta(NMe2)(4)[N(TMS)NMe2], and fluxional behavior of the amido and hydrazido ligands in solution

ALD of YF 3 Thin Films from TiF 4 and Y(thd) 3 Precursors

(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium

Erratum to “advanced thin film technology for ultrahigh resolution X-ray microscopy” [Ultramicroscopy 109 (2009) 1360–1364]

Atomic Layer Deposition of LaF 3 Thin Films using La(thd) 3 and TiF 4 as Precursors

Atomic layer deposition rate, phase composition and performance of HfO 2 films on noble metal and alkoxylated silicon substrates

High Spatial Resolution STXM at 6.2 keV Photon Energy

Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates

High Spatial Resolution STXM at 6.2 keV Photon Energy

(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridiumCCDC reference number 767385. For crystallographic data in CIF or other electronic format see DOI: 10.1039/c0jm00486c

Atomic layer deposition process with TiF_4 as a precursor for depositing metal fluoride thin films

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