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Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

Micromachines (Basel), 2019-11, Vol.10 (12), p.801

2019

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Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Applied surface science, 2024-11, Vol.674, p.160885, Article 160885

2024

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Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

Materials science forum, 2019-07, Vol.963, p.276-279

2019

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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis

Materials science forum, 2020-07, Vol.1004, p.57-62

2020

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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

Materials science forum, 2020-07, Vol.1004, p.408-413

2020

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SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Sensors (Basel, Switzerland), 2018-07, Vol.18 (7), p.2289

2018

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Structural Characterization of Heteroepitaxial 3C-SiC

Materials science forum, 2012-01, Vol.711, p.27-30

2012

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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Materials science forum, 2020-07, Vol.1004, p.472-476

2020

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Thermal Annealing of High Dose P Implantation in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.399-402, Article 399

2019

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Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

Applied physics express, 2017-03, Vol.10 (3), p.36601

2017

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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Materials science forum, 2018-06, Vol.924, p.535-538, Article 535

2018

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High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Materials science forum, 2019-07, Vol.963, p.91-96

2019

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Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Materials Science Forum, 2016-05, Vol.858, p.380-383

2016

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Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET

Materials science forum, 2019-07, Vol.963, p.456-459

2019

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Ion Implantation Defects in 4H-SiC DIMOSFET

Materials Science Forum, 2016-05, Vol.858, p.418-421

2016

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Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Materials science forum, 2019-07, Vol.963, p.407-411, Article 407

2019

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Hydrogen etching influence on 4H-SiC homo-epitaxial layer for high power device

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Current-induced defect formation in multi-walled carbon nanotubes

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2014-02, Vol.16 (2), p.1-6, Article 2287

2014

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Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

Materials science forum, 2018-06, Vol.924, p.84-87

2018

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4H-SiC defects evolution by thermal processes

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 181

2017

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Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis

Materials science forum, 2015-06, Vol.821-823, p.257-260

2015

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Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

Journal of materials research, 2013-01, Vol.28 (1), p.94-103

2013

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Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Materials science forum, 2018-06, Vol.924, p.357-360

2018

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Incoming and Inline Defectivity Control Solutions for Silicon Carbide Manufacturing

Materials science forum, 2018-06, Vol.924, p.513-517

2018

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Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis

Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Structural Characterization of Heteroepitaxial 3C-SiC

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Thermal Annealing of High Dose P Implantation in 4H-SiC

Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET

Ion Implantation Defects in 4H-SiC DIMOSFET

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Hydrogen etching influence on 4H-SiC homo-epitaxial layer for high power device

Current-induced defect formation in multi-walled carbon nanotubes

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

4H-SiC defects evolution by thermal processes

Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Incoming and Inline Defectivity Control Solutions for Silicon Carbide Manufacturing

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