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Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

Micromachines (Basel), 2019-11, Vol.10 (12), p.801

2019

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Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Materials Science Forum, 2016-05, Vol.858, p.380-383

2016

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Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

Materials science forum, 2019-07, Vol.963, p.276-279

2019

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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

Materials science forum, 2020-07, Vol.1004, p.408-413

2020

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Structural Characterization of Heteroepitaxial 3C-SiC

Materials science forum, 2012-01, Vol.711, p.27-30

2012

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SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Sensors (Basel, Switzerland), 2018-07, Vol.18 (7), p.2289

2018

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Ion Implantation Defects in 4H-SiC DIMOSFET

Materials Science Forum, 2016-05, Vol.858, p.418-421

2016

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The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates

Materials science forum, 2022-05, Vol.1062, p.33-37

2022

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High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Materials science forum, 2022-05, Vol.1062, p.18-22

2022

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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Materials science forum, 2018-06, Vol.924, p.535-538

2018

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Current-induced defect formation in multi-walled carbon nanotubes

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2014-02, Vol.16 (2), p.1-6, Article 2287

2014

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Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis

Materials science forum, 2015-06, Vol.821-823, p.257-260

2015

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Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

Journal of materials research, 2013-01, Vol.28 (1), p.94-103

2013

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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis

Materials science forum, 2020-07, Vol.1004, p.57-62

2020

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Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Materials science forum, 2018-06, Vol.924, p.357-360

2018

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Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology, 2013-04, Vol.4 (1), p.234-242

2013

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Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

Journal of materials research, 2013-01, Vol.28 (1), p.104-112

2013

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Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor

Materials science forum, 2015-06, Vol.821-823, p.902-905

2015

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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Materials science forum, 2020-07, Vol.1004, p.472-476

2020

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Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET

Materials science forum, 2019-07, Vol.963, p.456-459

2019

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Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer

Materials Science Forum, 2016-05, Vol.858, p.159-162

2016

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Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Materials Science Forum, 2016-05, Vol.858, p.197-200

2016

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Thermal Annealing of High Dose P Implantation in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.399-402

2019

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High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Materials science forum, 2019-07, Vol.963, p.91-96

2019

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Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

Structural Characterization of Heteroepitaxial 3C-SiC

SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Ion Implantation Defects in 4H-SiC DIMOSFET

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Current-induced defect formation in multi-walled carbon nanotubes

Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET

Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Thermal Annealing of High Dose P Implantation in 4H-SiC

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

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