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Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

Journal of applied physics, 2017-01, Vol.121 (3)

2017

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Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes

Semiconductor science and technology, 2019-01, Vol.34 (1), p.15007

2019

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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Journal of physics. D, Applied physics, 2016-12, Vol.49 (50), p.505101

2016

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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique

Journal of electronic materials, 2016-07, Vol.45 (7), p.3290-3299

2016

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Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers

IEEE photonics technology letters, 2007-12, Vol.19 (24), p.1952-1954

2007

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Oxidation and reduction behavior of Ge/Si islands

Applied physics letters, 2002-10, Vol.81 (18), p.3455-3457

2002

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Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Journal of applied physics, 1999-08, Vol.86 (4), p.2025-2033

1999

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Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1066-1069

2002

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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Journal of luminescence, 2017-08, Vol.188, p.301-306

2017

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Unimodal dome-shaped island population of Ge/Si [formula omitted] by step-wise growth in UHV-CVD

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.1013-1017

2002

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Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Applied physics letters, 2002-03, Vol.80 (10), p.1841-1843

2002

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Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures

Journal of applied physics, 2015-07, Vol.118 (3)

2015

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Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P

Thin solid films, 1999-07, Vol.348 (1-2), p.196-201

1999

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Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures

Journal of crystal growth, 2003-02, Vol.248, p.375-379

2003

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Measurement of Gain and Device Performance of a 1050-nm Vertical External Cavity Surface Emitting Laser

IEEE journal of quantum electronics, 2013-03, Vol.49 (3), p.380-385

2013

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Surface characterization of ordered (GaIn)P

Journal of crystal growth, 1998-12, Vol.195 (1), p.21-27

1998

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Analysis of the Pump Wavelength Dependence of a 1060-nm VECSEL

IEEE photonics technology letters, 2012-03, Vol.24 (5), p.341-343

2012

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Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes

Applied surface science, 2002-05, Vol.190 (1), p.252-257

2002

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Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

Journal of crystal growth, 1999, Vol.196 (1), p.33-40

1999

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Blue and green LED structures investigated in frequency domain using violet LD as an excitation source

2015 17th International Conference on Transparent Optical Networks (ICTON), 2015, p.1-1

2015

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MOVPE Growth and Characterisation of Zn-Doped (GaIn)P Layers with Respect to Surface Structure and Ordering

Crystal research and technology (1979), 2000-03, Vol.35 (3), p.271-278

2000

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MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

Crystal research and technology (1979), 1997, Vol.32 (1), p.69-82

1997

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Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

Applied physics letters, 2003-05, Vol.82 (20), p.3463-3465

2003

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MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.167-172

1997

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Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes

Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique

Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers

Oxidation and reduction behavior of Ge/Si islands

Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces

Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Unimodal dome-shaped island population of Ge/Si [formula omitted] by step-wise growth in UHV-CVD

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures

Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P

Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures

Measurement of Gain and Device Performance of a 1050-nm Vertical External Cavity Surface Emitting Laser

Surface characterization of ordered (GaIn)P

Analysis of the Pump Wavelength Dependence of a 1060-nm VECSEL

Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes

Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

Blue and green LED structures investigated in frequency domain using violet LD as an excitation source

MOVPE Growth and Characterisation of Zn-Doped (GaIn)P Layers with Respect to Surface Structure and Ordering

MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources

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