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Materials and processing issues in vertical GaN power electronics

Materials science in semiconductor processing, 2018-05, Vol.78, p.75-84

2018

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High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

IEEE electron device letters, 2017-02, Vol.38 (2), p.248-251

2017

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IEEE_Xplore

Trench formation and corner rounding in vertical GaN power devices

Applied physics letters, 2017-05, Vol.110 (19)

2017

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

IEEE electron device letters, 2017-08, Vol.38 (8), p.1097-1100

2017

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IEEE_Xplore

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2155-2161

2015

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IEEE_Xplore

A Technology Overview of the PowerChip Development Program

IEEE transactions on power electronics, 2013-09, Vol.28 (9), p.4182-4201

2013

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IEEE_Xplore

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Applied physics letters, 2014-08, Vol.105 (5)

2014

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A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1S), p.1

2016

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Las mujeres británicas ante los cambios constitucionales en el Reino Unido, 1828-1832

Historia constitucional, 2014 (15)

Yépez Piedra, Daniel

2014

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Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

IEEE electron device letters, 2019-01, Vol.40 (1), p.75-78

2019

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IEEE_Xplore

Seguridad de la cloroquina y la hidroxicloroquina para el tratamiento de pacientes con COVID-19

Revista Cubana de medicina, 2020-11, Vol.59 (3)

2020

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GaN-on-Si Vertical Schottky and p-n Diodes

IEEE electron device letters, 2014-06, Vol.35 (6), p.618-620

2014

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IEEE_Xplore

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2224-2230

2013

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IEEE_Xplore

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Applied physics letters, 2017-10, Vol.111 (16)

2017

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AlN metal-semiconductor field-effect transistors using Si-ion implantation

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter

IEEE journal of solid-state circuits, 2017-06, Vol.52 (6), p.1618-1627

2017

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IEEE_Xplore

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Applied physics letters, 2013-08, Vol.103 (8)

2013

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GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

IEEE electron device letters, 2017-08, Vol.38 (8), p.1094-1096

2017

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IEEE_Xplore

Design-Space and Scalable Technology for GaN Based Power Transistors

Piedra, Daniel

2018

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Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN

Solid-state electronics, 2014-11, Vol.101, p.63-69

2014

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Impact of Al sub(2)O sub(3) Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.318-325

2016

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Patterns of Midface and Mandible Fractures in a Government Hospital

Craniomaxillofacial trauma & reconstruction, 2023-01, p.194338752311513

2023

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Manejo terapéutico de pacientes con cáncer de pulmón durante la pandemia de COVID-19

Universidad Médica Pinareña, 2021, Vol.17 (1)

2021

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Coinfecciones y sobreinfecciones en pacientes con diagnóstico de COVID-19 ingresados en terapia del Hospital Hermanos Ameijeiras

Revista cubana de medicina tropical, 2022-12, Vol.74 (3)

2022

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GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio

IEEE electron device letters, 2016-10, Vol.37 (10), p.1314-1317

2016

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IEEE_Xplore

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Materials and processing issues in vertical GaN power electronics

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

Trench formation and corner rounding in vertical GaN power devices

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

A Technology Overview of the PowerChip Development Program

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Las mujeres británicas ante los cambios constitucionales en el Reino Unido, 1828-1832

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Seguridad de la cloroquina y la hidroxicloroquina para el tratamiento de pacientes con COVID-19

GaN-on-Si Vertical Schottky and p-n Diodes

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

AlN metal-semiconductor field-effect transistors using Si-ion implantation

Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

Design-Space and Scalable Technology for GaN Based Power Transistors

Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN

Impact of Al sub(2)O sub(3) Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors

Patterns of Midface and Mandible Fractures in a Government Hospital

Manejo terapéutico de pacientes con cáncer de pulmón durante la pandemia de COVID-19

Coinfecciones y sobreinfecciones en pacientes con diagnóstico de COVID-19 ingresados en terapia del Hospital Hermanos Ameijeiras

GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio

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