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Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Nanotechnology, 2009-07, Vol.20 (29), p.295602-295602 (6)

2009

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Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach

Nanotechnology, 2008-06, Vol.19 (24), p.245603-245603 (5)

2008

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Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

IEEE journal of selected topics in quantum electronics, 2017-09, Vol.23 (5), p.1-5

2017

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Doping efficiency, dopant location, and oxidation of Si nanocrystals

Applied physics letters, 2008-03, Vol.92 (12), p.123102-123102-3

2008

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Room-temperature atmospheric oxidation of Si nanocrystals after HF etching

Physical review. B, Condensed matter and materials physics, 2007-02, Vol.75 (8), Article 085423

2007

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Electrical conduction of silicon oxide containing silicon quantum dots

Journal of physics. Condensed matter, 2006-11, Vol.18 (43), p.9943-9950

2006

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Light emission from Si nanoclusters formed at low temperatures

Applied physics letters, 2006-03, Vol.88 (10), p.103111-103111-3

2006

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Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Journal of materials science & technology, 2013-03, Vol.29 (3), p.221-224

2013

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Defects in GaN films studied by positron annihilation spectroscopy

Journal of physics. Condensed matter, 2002-04, Vol.14 (12), p.L243-L248

2002

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Oxygen-related vacancy-type defects in ion-implanted silicon

Journal of physics. Condensed matter, 2003-10, Vol.15 (39), p.S2825-S2833

2003

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Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Physical review letters, 2003-04, Vol.90 (15), Article 155901

2003

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Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Journal of applied physics, 2004-06, Vol.95 (12), p.8155-8159

2004

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In-flight dry etching of plasma-synthesized silicon nanocrystals

Applied physics letters, 2007-08, Vol.91 (8), p.083112-083112-3

2007

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Fluorine in silicon: diffusion, trapping, and precipitation

Physical review letters, 2003-04, Vol.90 (15), p.155901-155901

2003

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Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1094-1098

2003

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Optimization of measurement parameters in Doppler broadening spectroscopy

Applied surface science, 2002-06, Vol.194 (1), p.255-259

2002

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Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Materials science forum, 2004-01, Vol.445-446, p.66-68

2004

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Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiOx

Journal of applied physics, 2005-05, Vol.97 (9)

2005

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Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Physica. E, Low-dimensional systems & nanostructures, 2017-09, Vol.93, p.54-57

2017

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Erratum: "Doping efficienty, dopant location and oxidation of Si nanocrystals" [ Appl. Phys. Lett. 92 , 123102 ( 2008 ) ]

Applied physics letters, 2008-06, Vol.92 (25), p.259902-259902-1

2008

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Formation and oxidation of Si nanoclusters in Er-doped Si-rich Si O x

Journal of applied physics, 2005-04, Vol.97 (9), p.096108-096108-3

2005

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Bis[4-(3-pyridylmethyleneamino)phenyl]methane

Acta crystallographica. Section C, Crystal structure communications, 2005-02, Vol.61 (2), p.o73-o74

2005

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Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere

Physica. B, Condensed matter, 2001-12, Vol.307 (1), p.40-44

2001

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1,4-Bis(benzimidazol-1-ylmethyl)-2,3,5,6-tetramethylbenzene methanol disolvate

Acta crystallographica. Section E, Structure reports online, 2005-01, Vol.61 (1), p.o137-o138

2005

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Electrical Activity of Nitrogen-Oxygen Complexes in Silicon

Physica status solidi. B. Basic research, 2000-10, Vol.221 (2), p.641-645

2000

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Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach

Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

Doping efficiency, dopant location, and oxidation of Si nanocrystals

Room-temperature atmospheric oxidation of Si nanocrystals after HF etching

Electrical conduction of silicon oxide containing silicon quantum dots

Light emission from Si nanoclusters formed at low temperatures

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Defects in GaN films studied by positron annihilation spectroscopy

Oxygen-related vacancy-type defects in ion-implanted silicon

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

In-flight dry etching of plasma-synthesized silicon nanocrystals

Fluorine in silicon: diffusion, trapping, and precipitation

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Optimization of measurement parameters in Doppler broadening spectroscopy

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiOx

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Erratum: "Doping efficienty, dopant location and oxidation of Si nanocrystals" [ Appl. Phys. Lett. 92 , 123102 ( 2008 ) ]

Formation and oxidation of Si nanoclusters in Er-doped Si-rich Si O x

Bis[4-(3-pyridylmethyleneamino)phenyl]methane

Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere

1,4-Bis(benzimidazol-1-ylmethyl)-2,3,5,6-tetramethylbenzene methanol disolvate

Electrical Activity of Nitrogen-Oxygen Complexes in Silicon

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