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In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(001)-4×6 surface

Microelectronic engineering, 2011-07, Vol.88 (7), p.1101-1104

2011

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Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs

Microelectronic engineering, 2011-04, Vol.88 (4), p.440-443

2011

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Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Journal of crystal growth, 2017-11, Vol.477, p.164-168

2017

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Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

Journal of crystal growth, 2019-04, Vol.512, p.223-229

2019

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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3

Journal of crystal growth, 2017-11, Vol.477, p.179-182

2017

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Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

Journal of crystal growth, 2017-11, Vol.477, p.159-163

2017

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Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

Applied surface science, 2013-11, Vol.284, p.601-610

2013

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Valence band electronic structure of Nd1−xYxMnO3 using X-ray absorption, photoemission and GGA+U calculations

Journal of electron spectroscopy and related phenomena, 2013-08, Vol.189, p.51-55

2013

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Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2O 3 on freshly molecular beam epitaxy grown GaAs

Microelectronic engineering, 2011, Vol.88 (4), p.440-443

2011

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In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2O 3 on pristine n-GaAs(0 0 1)-4 × 6 surface

Microelectronic engineering, 2011, Vol.88 (7), p.1101-1104

2011

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Initial stages of ultra thin Ti film growth on Si(1 1 1)-7×7 surface

Thin solid films, 2003-03, Vol.428 (1), p.133-138

2003

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Impact of Chemoradiotherapy Intensity on Pathological Complete Response in Patients with Esophageal Cancer Receiving Trimodality Therapy

International journal of radiation oncology, biology, physics, 2018-11, Vol.102 (3), p.e34-e34

2018

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Lung V20 as a Prognostic Factor of Survival In Patients with Esophageal Cancer Who Received Neoadjuvant Chemoradiotherapy

International journal of radiation oncology, biology, physics, 2018-11, Vol.102 (3), p.e35-e35

2018

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Superior sperm competitors sire higher–quality young

Proceedings of the Royal Society. B, Biological sciences, 2003-09, Vol.270 (1527), p.1933-1938

2003

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Tilted magnetization of a La07Sr0.3MnO3/LaAlO3 (001) thin film

Journal of magnetism and magnetic materials, 2004-09, Vol.280 (1), p.51-59

2004

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Investigation on hydrogen annealing effect for various ferroelectric films by electrostatic force microscope

Applied surface science, 2002-03, Vol.188 (3), p.411-415

2002

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Tilted magnetization of a La 0.7Sr 0.3MnO 3/LaAlO 3 (001) thin film

Journal of magnetism and magnetic materials, 2004, Vol.280 (1), p.51-59

2004

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Are There Hot Hands Among Mutual Fund Houses in Hong Kong?

Journal of business finance & accounting, 1999-01, Vol.26 (1-2), p.103-135

1999

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Predicting mutual fund performance: a portfolio commonality approach

International journal of business, 2003-12, Vol.8 (1), p.63

2003

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Diode lasers in external cavities with frequency-shifted feedback

Optics communications, 1991-10, Vol.85 (5), p.414-418

1991

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Studies in community nutrition: Estimation of sodium output

Preventive medicine, 1976-09, Vol.5 (3), p.400-407

1976

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Toward quality assurance for metaphase FISH: A multicenter experience

American journal of medical genetics, 1996-10, Vol.65 (3), p.190-196

1996

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In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(001)-4×6 surface

Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs

Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3

Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

Valence band electronic structure of Nd1−xYxMnO3 using X-ray absorption, photoemission and GGA+U calculations

Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2O 3 on freshly molecular beam epitaxy grown GaAs

In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2O 3 on pristine n-GaAs(0 0 1)-4 × 6 surface

Initial stages of ultra thin Ti film growth on Si(1 1 1)-7×7 surface

Impact of Chemoradiotherapy Intensity on Pathological Complete Response in Patients with Esophageal Cancer Receiving Trimodality Therapy

Lung V20 as a Prognostic Factor of Survival In Patients with Esophageal Cancer Who Received Neoadjuvant Chemoradiotherapy

Superior sperm competitors sire higher–quality young

Tilted magnetization of a La07Sr0.3MnO3/LaAlO3 (001) thin film

Investigation on hydrogen annealing effect for various ferroelectric films by electrostatic force microscope

Tilted magnetization of a La 0.7Sr 0.3MnO 3/LaAlO 3 (001) thin film

Are There Hot Hands Among Mutual Fund Houses in Hong Kong?

Predicting mutual fund performance: a portfolio commonality approach

Diode lasers in external cavities with frequency-shifted feedback

Studies in community nutrition: Estimation of sodium output

Toward quality assurance for metaphase FISH: A multicenter experience

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