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Gain without inversion in semiconductor nanostructures

Nature materials, 2006-03, Vol.5 (3), p.175-178

2006

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ac stark splitting and quantum interference with intersubband transitions in quantum wells

Physical review letters, 2005-04, Vol.94 (15), p.157403.1-157403.4, Article 157403

2005

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Optically mediated coherent population trapping in asymmetric semiconductor quantum wells

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (8), p.085323.1-085323.7, Article 085323

2005

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Laser-induced quantum coherence in a semiconductor quantum well

Physical review letters, 2000-01, Vol.84 (5), p.1019-1022

2000

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Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

Physica. E, Low-dimensional systems & nanostructures, 2004, Vol.20 (3), p.531-535

2004

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Temperature transients and thermal properties of GaAs/AlGaAs quantum-cascade lasers

Applied physics letters, 2003-06, Vol.82 (23), p.4020-4022

2003

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Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

Applied physics letters, 1999-11, Vol.75 (22), p.3437-3439

1999

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Mid-infrared (λ ~ 2–6 µm) measurements of the refractive indices of GaAs and AlAs

Semiconductor science and technology, 2002-11, Vol.17 (11), p.1189-1192

2002

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Analytical method for the optical modelling of resonant-cavity-enhanced photodiodes

Semiconductor science and technology, 2004-06, Vol.19 (6), p.673-679

2004

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Intersubband absorption saturation study of narrow III-V multiple quantum wells in the λ = 2.8-9 μm spectral range

Semiconductor science and technology, 1997-06, Vol.12 (6), p.708-714

1997

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Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

Applied physics letters, 1999-04, Vol.74 (16), p.2384-2386

1999

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Phase-matched second harmonic generation in asymmetric double quantum wells

Applied physics letters, 1998-05, Vol.72 (21), p.2654-2656

1998

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Nonequilibrium electron distributions in a three-subband InGaAs/InAlAs quantum well studied via double resonance spectroscopy

Applied physics letters, 2000-08, Vol.77 (6), p.857-859

2000

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MBE growth of mid-infrared antimonide LEDs with strained electron barriers

Journal of crystal growth, 2001-07, Vol.227, p.600-604

2001

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Observation of electromagnetically induced transparency and measurements of subband dynamics in a semiconductor quantum well

Physica. E, Low-dimensional systems & nanostructures, 2000-04, Vol.7 (1), p.166-173

2000

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GaInSb/InAs/AlGaAsSb “ W ” quantum-well light-emitting diodes

Applied physics letters, 2001-12, Vol.79 (25), p.4073-4075

2001

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Multiple subband transitions and evidence for population inversion in InAs/In(As,Sb) heterostructures

Journal of applied physics, 2002-03, Vol.91 (5), p.3067-3073

2002

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All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry–Perot optical cavity

Applied physics letters, 1999-06, Vol.74 (24), p.3717-3719

1999

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Two-color midinfrared saturation spectroscopy of intersubband transitions in multiquantum wells

Applied physics letters, 1996-11, Vol.69 (22), p.3405-3407

1996

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4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbx strained layer superlattices

Semiconductor science and technology, 1995-08, Vol.10 (8), p.1177-1180

1995

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The Efficacy of Material Safety Data Sheets and Worker Acceptability

Journal of safety research, 1999, Vol.30 (2), p.113-122

1999

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Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better ?

Applied physics letters, 1991-12, Vol.59 (25), p.3324-3326

1991

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Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy

Semiconductor science and technology, 1993-01, Vol.8 (1), p.101-111

1993

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GaAs asymmetrically doped n - i - p - i - superlattices for 10 μm infrared subband detector and modulator applications

Journal of applied physics, 1994-10, Vol.76 (7), p.4407-4412

1994

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Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates

Semiconductor science and technology, 1993-12, Vol.8 (12), p.2135-2142

1993

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Gain without inversion in semiconductor nanostructures

ac stark splitting and quantum interference with intersubband transitions in quantum wells

Optically mediated coherent population trapping in asymmetric semiconductor quantum wells

Laser-induced quantum coherence in a semiconductor quantum well

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

Temperature transients and thermal properties of GaAs/AlGaAs quantum-cascade lasers

Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

Mid-infrared (λ ~ 2–6 µm) measurements of the refractive indices of GaAs and AlAs

Analytical method for the optical modelling of resonant-cavity-enhanced photodiodes

Intersubband absorption saturation study of narrow III-V multiple quantum wells in the λ = 2.8-9 μm spectral range

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

Phase-matched second harmonic generation in asymmetric double quantum wells

Nonequilibrium electron distributions in a three-subband InGaAs/InAlAs quantum well studied via double resonance spectroscopy

MBE growth of mid-infrared antimonide LEDs with strained electron barriers

Observation of electromagnetically induced transparency and measurements of subband dynamics in a semiconductor quantum well

GaInSb/InAs/AlGaAsSb “ W ” quantum-well light-emitting diodes

Multiple subband transitions and evidence for population inversion in InAs/In(As,Sb) heterostructures

All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry–Perot optical cavity

Two-color midinfrared saturation spectroscopy of intersubband transitions in multiquantum wells

4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbx strained layer superlattices

The Efficacy of Material Safety Data Sheets and Worker Acceptability

Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better ?

Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy

GaAs asymmetrically doped n - i - p - i - superlattices for 10 μm infrared subband detector and modulator applications

Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates

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