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Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells

Applied physics letters, 2019-12, Vol.115 (25)

2019

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23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Gettering in silicon photovoltaics: A review

Solar energy materials and solar cells, 2022-01, Vol.234, p.111447, Article 111447

2022

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Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

Advanced energy materials, 2019-03, Vol.9 (9), p.n/a

2019

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Realization and simulation of interdigitated back contact silicon solar cells with dopant-free asymmetric hetero-contacts

Solar energy, 2022-01, Vol.231, p.203-208

2022

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Onset of ring defects in n-type Czochralski-grown silicon wafers

Journal of applied physics, 2020-04, Vol.127 (15)

2020

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Complete regeneration of BO-related defects in n-type upgraded metallurgical-grade Czochralski-grown silicon heterojunction solar cells

Applied physics letters, 2018-10, Vol.113 (15)

2018

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Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

Solar energy materials and solar cells, 2020-03, Vol.206, p.110348, Article 110348

2020

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Applications of carrier de-smearing of photoluminescence images on silicon wafers

Progress in photovoltaics, 2016-12, Vol.24 (12), p.1547-1553

2016

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Exceptional silicon surface passivation by an ONO dielectric stack

Solar energy materials and solar cells, 2019-01, Vol.189, p.245-253

2019

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Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell

Progress in photovoltaics, 2020-10, Vol.28 (10), p.1034-1044

2020

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Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells

ACS applied energy materials, 2018-05, Vol.1 (5), p.2275-2282

2018

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Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon

IEEE journal of photovoltaics, 2015-09, Vol.5 (5), p.1357-1365

2015

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Evaluating Depth Distributions of Dislocations in Silicon Wafers Using Micro-Photoluminescence Excitation Spectroscopy

Energy procedia, 2016-08, Vol.92, p.145-152

2016

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Recombination sources in p-type high performance multicrystalline silicon

Japanese Journal of Applied Physics, 2017-08, Vol.56 (8S2), p.8

2017

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Effect of Boron Codoping and Phosphorus Concentration on Phosphorus Diffusion Gettering

IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.64-69

2014

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22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n‐type Solar‐Grade Wafers

Solar RRL, 2019-11, Vol.3 (11), p.n/a

2019

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Tradeoffs Between Impurity Gettering, Bulk Degradation, and Surface Passivation of Boron-Rich Layers on Silicon Solar Cells

IEEE journal of photovoltaics, 2013-01, Vol.3 (1), p.261-266

2013

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Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers

IEEE journal of photovoltaics, 2016-05, Vol.6 (3), p.746-753

2016

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Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence

Solar RRL, 2017-01, Vol.1 (1), p.n/a

2017

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Investigating Internal Gettering of Iron at Grain Boundaries in Multicrystalline Silicon via Photoluminescence Imaging

IEEE journal of photovoltaics, 2012-10, Vol.2 (4), p.479-484

2012

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Quantification of Sheet Resistance in Boron‐Diffused Silicon Using Micro‐Photoluminescence Spectroscopy at Room Temperature

Solar RRL, 2017-10, Vol.1 (10), p.n/a

2017

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High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion

Solar energy materials and solar cells, 2019-05, Vol.193, p.80-84

2019

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Secondary Electron Microscopy Dopant Contrast Image (SEMDCI) for Laser Doping

IEEE journal of photovoltaics, 2013-04, Vol.3 (2), p.762-768

2013

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Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells

23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films

Gettering in silicon photovoltaics: A review

Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

Realization and simulation of interdigitated back contact silicon solar cells with dopant-free asymmetric hetero-contacts

Onset of ring defects in n-type Czochralski-grown silicon wafers

Complete regeneration of BO-related defects in n-type upgraded metallurgical-grade Czochralski-grown silicon heterojunction solar cells

Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

Applications of carrier de-smearing of photoluminescence images on silicon wafers

Exceptional silicon surface passivation by an ONO dielectric stack

Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell

Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells

Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon

Evaluating Depth Distributions of Dislocations in Silicon Wafers Using Micro-Photoluminescence Excitation Spectroscopy

Recombination sources in p-type high performance multicrystalline silicon

Effect of Boron Codoping and Phosphorus Concentration on Phosphorus Diffusion Gettering

22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n‐type Solar‐Grade Wafers

Tradeoffs Between Impurity Gettering, Bulk Degradation, and Surface Passivation of Boron-Rich Layers on Silicon Solar Cells

Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers

Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence

Investigating Internal Gettering of Iron at Grain Boundaries in Multicrystalline Silicon via Photoluminescence Imaging

Quantification of Sheet Resistance in Boron‐Diffused Silicon Using Micro‐Photoluminescence Spectroscopy at Room Temperature

High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion

Secondary Electron Microscopy Dopant Contrast Image (SEMDCI) for Laser Doping

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