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Dopant diffusion in silicon: a consistent view involving nonequilibrium defects

Journal of applied physics, 1984-05, Vol.55 (10), p.3518-3530

1984

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Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

Journal of crystal growth, 1984-01, Vol.68 (3), p.727-732

1984

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X-ray topographic characterization of porous silicon layers

Journal of crystal growth, 1984-01, Vol.68 (3), p.721-726

1984

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Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms

Journal of the Electrochemical Society, 1983-07, Vol.130 (7), p.1611-1614

1983

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Dopant redistribution in heavily doped silicon: confirmation of the validity of the vacancy-percolation model

Journal of applied physics, 1989-07, Vol.66 (2), p.970-972

1989

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Stress wave propagation in composite materials

Structural engineering and mechanics, 2001-04, Vol.11 (4), p.407-422

2001

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Electronic Properties of the Si—SiO2 Interface as a Function of Oxide Growth Conditions

June 16, 2021, Vol.11, Number 2, p.669-676

2021

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Surface segregation mechanism during two-dimensional epitaxial growth: the case of dopants in Si and GaAs molecular-beam epitaxy

Journal of applied physics, 1989-04, Vol.65 (7), p.2681-2687

1989

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Study of ballistic transport in Si-CoSi2-Si metal base transistors

Applied physics letters, 1986-08, Vol.49 (5), p.271-273

1986

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Effects of post-diffusion annealing on Zn-diffused GaAs:Si

Journal of applied physics, 1993-11, Vol.74 (9), p.5493-5500

1993

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Use of spectral analysis in the detection of frequency differences in the electrogastrograms of normal and diabetic subjects

IEEE transactions on biomedical engineering, 1988-11, Vol.35 (11), p.935-941

1988

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Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Applied physics letters, 1985-11, Vol.47 (9), p.950-952

1985

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Close spatial correlation and chemical effects in annealing of paramagnetic oxygen vacancies (E'1 centers) in ion-implanted amorphous SiO2

Journal of applied physics, 1986-02, Vol.59 (4), p.1096-1102

1986

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Diffusion of arsenic in silicon: validity of the percolation model

Applied physics letters, 1983-01, Vol.42 (12), p.1043-1044

1983

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Optical identification of substitutional acceptors in refined ZnTe

Physica Status Solidi (b), 1979-08, Vol.94 (2), p.627-639

1979

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Addenda au FEW XIX (Orientalia)

2012

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Point defect kinetics and dopant diffusion during silicon oxidation

Applied physics letters, 1986-03, Vol.48 (10), p.627-629

1986

Volltextzugriff (PDF)

The electron-hole plasma in cubic ZnTe and ZnSe crystals

Journal of crystal growth, 1990-04, Vol.101 (1), p.734-738

1990

Volltextzugriff (PDF)

La mer, la guerre et les affaires: Enjeux et réalités maritimes de la Révolution française

2018

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Growth of large areas of grain boundary-free silicon-on-insulator

Electronics letters, 1983-01, Vol.19 (23), p.985-986

1983

Volltextzugriff (PDF)

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: the very thin Si film case

Applied physics letters, 1988-01, Vol.52 (1), p.45-47

1988

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Electrical influence of pinholes in metal-base transistors

Solid-state electronics, 1986-09, Vol.29 (9), p.907-914

1986

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Photoconductivity as a Tool for the Study of Deep Electronic Traps of Metal-Oxide-Silicon Sandwiches

April 16, 2021, Vol.10, Number 2, p.555-562

2021

Volltextzugriff (PDF)

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Applied physics letters, 1986-01, Vol.48 (1), p.50-52

1986

Volltextzugriff (PDF)

Transmission electron microscopy observations of precipitates in ZnTe: Shape of the tellurium solidus line

Journal of crystal growth, 1979-01, Vol.47 (5), p.727-732

1979

Volltextzugriff (PDF)

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Dopant diffusion in silicon: a consistent view involving nonequilibrium defects

Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

X-ray topographic characterization of porous silicon layers

Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms

Dopant redistribution in heavily doped silicon: confirmation of the validity of the vacancy-percolation model

Stress wave propagation in composite materials

Electronic Properties of the Si—SiO2 Interface as a Function of Oxide Growth Conditions

Surface segregation mechanism during two-dimensional epitaxial growth: the case of dopants in Si and GaAs molecular-beam epitaxy

Study of ballistic transport in Si-CoSi2-Si metal base transistors

Effects of post-diffusion annealing on Zn-diffused GaAs:Si

Use of spectral analysis in the detection of frequency differences in the electrogastrograms of normal and diabetic subjects

Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Close spatial correlation and chemical effects in annealing of paramagnetic oxygen vacancies (E'1 centers) in ion-implanted amorphous SiO2

Diffusion of arsenic in silicon: validity of the percolation model

Optical identification of substitutional acceptors in refined ZnTe

Addenda au FEW XIX (Orientalia)

Point defect kinetics and dopant diffusion during silicon oxidation

The electron-hole plasma in cubic ZnTe and ZnSe crystals

La mer, la guerre et les affaires: Enjeux et réalités maritimes de la Révolution française

Growth of large areas of grain boundary-free silicon-on-insulator

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: the very thin Si film case

Electrical influence of pinholes in metal-base transistors

Photoconductivity as a Tool for the Study of Deep Electronic Traps of Metal-Oxide-Silicon Sandwiches

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Transmission electron microscopy observations of precipitates in ZnTe: Shape of the tellurium solidus line

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