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High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

IEEE electron device letters, 2015-02, Vol.36 (2), p.123-125

2015

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Heteropolytypic Superlattices

Materials Science Forum, 2016-05, Vol.858, p.278-282

Pezoldt, Joerg

2016

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Formation and Characterization of Three-Dimensional Tetrahedral MoS2 Thin Films by Chemical Vapor Deposition

Crystal growth & design, 2022-09, Vol.22 (9), p.5229-5238

2022

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Size effect of the silicon carbide Young's modulus

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films

Applied surface science, 2014-02, Vol.292, p.997-1001

2014

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Influence of environment on self-propagating reactions in Al/Ni multilayer foils

MRS advances, 2023-08, Vol.8 (9), p.477-483

2023

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Approaching Gas Phase Electrodeposition: Process and Optimization to Enable the Self-Aligned Growth of 3D Nanobridge-Based Interconnects

Advanced materials (Weinheim), 2016-03, Vol.28 (9), p.1770-1779

2016

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Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs

Advanced functional materials, 2014-06, Vol.24 (24), p.3706-3714

2014

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Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology

Advanced electronic materials, 2023-01, Vol.9 (1), p.n/a

2023

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Enhancement‐ and depletion‐mode AlGaN/GaN HEMTs on 3C‐SiC(111)/Si(111) pseudosubstrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Electronics (Basel), 2016-03, Vol.5 (1), p.3-3

2016

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Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning electron microscope bending tests

Thin solid films, 2016-04, Vol.604, p.85-89

2016

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Deformable printed circuit boards that enable metamorphic electronics

NPG Asia materials, 2016-12, Vol.8 (12), p.e336-e336

2016

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Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

Acta materialia, 2014-08, Vol.75, p.219-226

2014

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AlGaN HEMT based digital circuits on 3C‐SiC(111)/Si(111) pseudosubstrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures

Materials science forum, 2015-06, Vol.821-823, p.281-284

2015

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Active Matrix-Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger Print

Advanced materials (Weinheim), 2014-12, Vol.26 (45), p.7600-7607

2014

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Amplification in Graphene Nanoribbon Junctions

Materials Science Forum, 2016-05, Vol.858, p.1141-1144

2016

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Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures

Materials science forum, 2014-02, Vol.778-780, p.444-448

2014

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Radiative Pumping and Propagation of Plexcitons in Diffractive Plasmonic Crystals

Nano letters, 2018-08, Vol.18 (8), p.4927-4933

2018

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Side gate AlGaN/GaN FET on silicon and sapphire

Physica status solidi. C, 2014-02, Vol.11 (2), p.280-283

2014

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AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

Materials science forum, 2013-01, Vol.740-742, p.1115-1118

2013

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Concentration Profile Simulation of SiC/Si Heterostructures

Materials Science Forum, 2016-05, Vol.858, p.501-504

2016

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SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices

Materials science forum, 2013, Vol.740-742, p.1119-1122

2013

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Black luminescent silicon

Physica status solidi. C, 2011-03, Vol.8 (3), p.1021-1026

2011

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High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

Heteropolytypic Superlattices

Formation and Characterization of Three-Dimensional Tetrahedral MoS2 Thin Films by Chemical Vapor Deposition

Size effect of the silicon carbide Young's modulus

Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films

Influence of environment on self-propagating reactions in Al/Ni multilayer foils

Approaching Gas Phase Electrodeposition: Process and Optimization to Enable the Self-Aligned Growth of 3D Nanobridge-Based Interconnects

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs

Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology

Enhancement‐ and depletion‐mode AlGaN/GaN HEMTs on 3C‐SiC(111)/Si(111) pseudosubstrates

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning electron microscope bending tests

Deformable printed circuit boards that enable metamorphic electronics

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

AlGaN HEMT based digital circuits on 3C‐SiC(111)/Si(111) pseudosubstrates

Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures

Active Matrix-Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger Print

Amplification in Graphene Nanoribbon Junctions

Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures

Radiative Pumping and Propagation of Plexcitons in Diffractive Plasmonic Crystals

Side gate AlGaN/GaN FET on silicon and sapphire

AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

Concentration Profile Simulation of SiC/Si Heterostructures

SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices

Black luminescent silicon

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