UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Two-dimensional materials and their prospects in transistor electronics

Nanoscale, 2015-05, Vol.7 (18), p.8261-8283

2015

Volltextzugriff (PDF)

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6386-6434

2007

Volltextzugriff (PDF)

Foxp3(+) T cells expressing RORγt represent a stable regulatory T-cell effector lineage with enhanced suppressive capacity during intestinal inflammation

Mucosal immunology, 2016-03, Vol.9 (2), p.444-457

2016

Volltextzugriff (PDF)

Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)

Surface science, 2020-09, Vol.699, p.121638, Article 121638

2020

Volltextzugriff (PDF)

Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Carbon (New York), 2020-12, Vol.170, p.666-676

2020

Volltextzugriff (PDF)

Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo

AIP advances, 2023-09, Vol.13 (9), p.095224-095224-7

2023

Volltextzugriff (PDF)

Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide

Crystal growth & design, 2008-04, Vol.8 (4), p.1257-1260

2008

Volltextzugriff (PDF)

Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)

Physics of the solid state, 2019-12, Vol.61 (12), p.2468-2472

2019

Volltextzugriff (PDF)

Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

Scientific reports, 2018-05, Vol.8 (1), p.6879-14, Article 6879

2018

Volltextzugriff (PDF)

The intestinal micro-environment imprints stromal cells to promote efficient Treg induction in gut-draining lymph nodes

Mucosal immunology, 2014-03, Vol.7 (2), p.359-368

2014

Volltextzugriff (PDF)

Nanoelectromechanical devices for sensing applications

Sensors and actuators. B, Chemical, 2007-09, Vol.126 (1), p.24-34

2007

Volltextzugriff (PDF)

Side-gate graphene field-effect transistors with high transconductance

Applied physics letters, 2012-08, Vol.101 (9), p.93504

2012

Volltextzugriff (PDF)

Reconstruction of concentration profiles in heterostructures with chemically modified interfaces

Journal of applied physics, 2018-06, Vol.123 (21)

2018

Volltextzugriff (PDF)

Tri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-Substrates

Materials science forum, 2016-05, Vol.858, p.1174-1177

2016

Volltextzugriff (PDF)

Electrical gating and rectification in graphene three-terminal junctions

Applied surface science, 2014-02, Vol.291, p.87-92

2014

Volltextzugriff (PDF)

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

Thin solid films, 2011-10, Vol.520 (1), p.491-496

2011

Volltextzugriff (PDF)

Graphene field effect transistor improvement by graphene–silicon dioxide interface modification

Physica. E, Low-dimensional systems & nanostructures, 2012-03, Vol.44 (6), p.985-988

2012

Volltextzugriff (PDF)

Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation

Fullerenes, nanotubes, and carbon nanostructures, 2020-04, Vol.28 (4), p.316-320

2020

Volltextzugriff (PDF)

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1904-1909, Article 1904

2019

Volltextzugriff (PDF)

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Journal of applied physics, 2013-01, Vol.113 (3)

2013

Volltextzugriff (PDF)

Phase selective growth and properties of rhombohedral and cubic indium oxide

Applied physics letters, 2006-07, Vol.89 (1), p.011904-011904-3

2006

Volltextzugriff (PDF)

Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates

Diamond and related materials, 2011-05, Vol.20 (5), p.717-721

2011

Volltextzugriff (PDF)

High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1882-1885

2018

Volltextzugriff (PDF)

Growth of cubic InN on r-plane sapphire

Applied physics letters, 2003-10, Vol.83 (17), p.3468-3470

2003

Volltextzugriff (PDF)

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.357-376

2011

Volltextzugriff (PDF)

1 – 25 von 276

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(236)
Mit Volltextzugriff
(254)

Publikationsform

Sprache

Englisch
(267)
Russisch
(3)
Deutsch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(185)
Technology
(142)
Materials Science
(138)
Physical Sciences
(117)
Physics
(116)
Materials Science, Multidisciplinary
(113)
Physics, Applied
(64)
Physics, Condensed Matter
(62)
Exact Sciences And Technology
(48)
Silicon Carbide
(41)
Cross-Disciplinary Physics: Materials Science; Rheology
(28)
Materials Science, Coatings & Films
(28)
Heteroepitaxy
(20)
Chemistry
(18)
Germanium
(18)
Condensed Matter: Structure, Mechanical And Thermal Properties
(17)
Methods Of Deposition Of Films And Coatings; Film Growth And Epitaxy
(17)
Engineering
(15)
Materials Science, Ceramics
(15)
3c-Sic
(14)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Two-dimensional materials and their prospects in transistor electronics

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Foxp3(+) T cells expressing RORγt represent a stable regulatory T-cell effector lineage with enhanced suppressive capacity during intestinal inflammation

Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)

Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo

Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide

Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)

Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

The intestinal micro-environment imprints stromal cells to promote efficient Treg induction in gut-draining lymph nodes

Nanoelectromechanical devices for sensing applications

Side-gate graphene field-effect transistors with high transconductance

Reconstruction of concentration profiles in heterostructures with chemically modified interfaces

Tri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-Substrates

Electrical gating and rectification in graphene three-terminal junctions

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

Graphene field effect transistor improvement by graphene–silicon dioxide interface modification

Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Phase selective growth and properties of rhombohedral and cubic indium oxide

Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates

High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

Growth of cubic InN on r-plane sapphire

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

Suchergebnisse filtern