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Estimation of current leakage in left and right ventricular conductance volumetry using a dynamic finite element model

IEEE transactions on biomedical engineering, 2000-11, Vol.47 (11), p.1476-1486

2000

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A scheme to correct for electric field non-uniformity in right ventricular volume measurement using a conductance catheter

Computers in Cardiology 1998. Vol. 25 (Cat. No.98CH36292), 1998, p.677-680

1998

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Assessment of vena caval perforation by the option retrievable filter: CT imaging analysis of 276 filters

Journal of vascular and interventional radiology, 2015-02, Vol.26 (2), p.S222-S222

2015

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Abstract No. 516 - Assessment of vena caval perforation by the option retrievable filter: CT imaging analysis of 276 filters

Journal of vascular and interventional radiology, 2015-02, Vol.26 (2), p.S222-S222

2015

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Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

IEEE electron device letters, 2003-06, Vol.24 (6), p.402-404

2003

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Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1899-1906

2008

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Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

IEEE electron device letters, 2004-07, Vol.25 (7), p.474-476

2004

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Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

IEEE electron device letters, 2008-05, Vol.29 (5), p.471-473

2008

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4H-SiC normally-off vertical junction field-effect transistor with high current density

IEEE electron device letters, 2003-07, Vol.24 (7), p.463-465

2003

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Development of 4H-SiC LJFET-Based Power IC

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1934-1945

2008

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1.88- \hbox\Omega\cdot\hbox^ 1650-V Normally on 4H-SiC TI-VJFET

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1880-1886

2008

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A high current gain 4H-SiC NPN power bipolar junction transistor

IEEE electron device letters, 2003-05, Vol.24 (5), p.327-329

2003

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1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

IEEE electron device letters, 2007-05, Vol.28 (5), p.404-407

2007

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High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

IEEE electron device letters, 2003-11, Vol.24 (11), p.695-697

2003

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Fabrication and characterization of high current gain (/spl beta/=430) and high power (23 A-500 V) 4H-SiC hybrid Darlington bipolar transistor

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2211-2216

2004

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Urinary Excretion of Biologically Active Peptides and/or Peptide-Like Material in Various Disorders

Prague, Czechoslovakia, August 29–September 3, 1982, 2019, Vol.17., p.613-616

2019

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Rossi-XTE long-term monitoring of eta carinae

Nuclear physics. Section B, Proceedings supplement, 1999, Vol.69 (1), p.33-35

1999

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Estimation of current leakage in left and right ventricular conductance volumetry using a dynamic finite element model

A scheme to correct for electric field non-uniformity in right ventricular volume measurement using a conductance catheter

Assessment of vena caval perforation by the option retrievable filter: CT imaging analysis of 276 filters

Abstract No. 516 - Assessment of vena caval perforation by the option retrievable filter: CT imaging analysis of 276 filters

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

4H-SiC normally-off vertical junction field-effect transistor with high current density

Development of 4H-SiC LJFET-Based Power IC

1.88- \hbox\Omega\cdot\hbox^ 1650-V Normally on 4H-SiC TI-VJFET

A high current gain 4H-SiC NPN power bipolar junction transistor

1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

Fabrication and characterization of high current gain (/spl beta/=430) and high power (23 A-500 V) 4H-SiC hybrid Darlington bipolar transistor

Urinary Excretion of Biologically Active Peptides and/or Peptide-Like Material in Various Disorders

Rossi-XTE long-term monitoring of eta carinae

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