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On surface roughness-limited mobility in highly doped n-MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1423-1428

1999

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Effect of oxide tunneling on the measurement of MOS interface states

IEEE electron device letters, 2000-08, Vol.21 (8), p.405-407

2000

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A physically-based model of the effective mobility in heavily-doped n-MOSFETs

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.110-115

1998

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Carrier quantization at flat bands in MOS devices

IEEE transactions on electron devices, 1999-02, Vol.46 (2), p.383-387

1999

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Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements

IEEE transactions on electron devices, 1999-05, Vol.46 (5), p.1029-1035

1999

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Switch-off behavior of floating-body PD SOI MOSFET's

IEEE transactions on electron devices, 1998-11, Vol.45 (11), p.2372-2375

1998

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Physics and characterization of transient effects in SOI transistors

Microelectronic engineering, 1999, Vol.48 (1), p.319-326

1999

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Monte Carlo simulation of conductance characteristics in SOI-MOSFET

Physica. B, Condensed matter, 1999-12, Vol.272 (1), p.565-567

1999

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Transient behavior and low VDS hysteresis in PD SOI MOSFETs

Microelectronics and reliability, 1998, Vol.38 (5), p.759-765

1998

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Experimental characterization of the continuous switching regime in floating-body PD SOI MOSFETs

Microelectronics and reliability, 1998, Vol.38 (10), p.1553-1559

1998

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A Detailed Study of Electron Mobility Degradation by Surface Scattering in ULSI MOSFET's

28th European Solid-State Device Research Conference, 1998, p.328-331

1998

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Sex differences in the Beck Depression Inventory scores of adolescents

Journal of youth and adolescence, 1986-04, Vol.15 (2), p.165-171

1986

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A Comparison between CV and Charge-Pumping in the Extraction of MOS Interface States

28th European Solid-State Device Research Conference, 1998, p.112-115

1998

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Characterization of the Back Channel Interface in SOI MOSFET's

28th European Solid-State Device Research Conference, 1998, p.284-287

1998

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Computational discovery of ultra-strong, stable, and lightweight refractory multi-principal element alloys. Part I: design principles and rapid down-selection

npj computational materials, 2023-05, Vol.9 (1), p.84-13, Article 84

2023

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Microstructural, phase, and thermophysical stability of CrMoNbV refractory multi-principal element alloys

Journal of alloys and compounds, 2024-03, Vol.977 (C), p.173349, Article 173349

2024

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Computational discovery of ultra-strong, stable, and lightweight refractory multi-principal element alloys. Part II: comprehensive ternary design and validation

npj computational materials, 2023-05, Vol.9 (1), p.88-13, Article 88

2023

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On surface roughness-limited mobility in highly doped n-MOSFET's

Effect of oxide tunneling on the measurement of MOS interface states

A physically-based model of the effective mobility in heavily-doped n-MOSFETs

Carrier quantization at flat bands in MOS devices

Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements

Switch-off behavior of floating-body PD SOI MOSFET's

Physics and characterization of transient effects in SOI transistors

Monte Carlo simulation of conductance characteristics in SOI-MOSFET

Transient behavior and low VDS hysteresis in PD SOI MOSFETs

Experimental characterization of the continuous switching regime in floating-body PD SOI MOSFETs

A Detailed Study of Electron Mobility Degradation by Surface Scattering in ULSI MOSFET's

Sex differences in the Beck Depression Inventory scores of adolescents

A Comparison between CV and Charge-Pumping in the Extraction of MOS Interface States

Characterization of the Back Channel Interface in SOI MOSFET's

25th anniversary of the Berlin workshop on developmental toxicology: DevTox database update, challenges in risk assessment of developmental neurotoxicity and alternative methodologies in bone development and growth

Computational discovery of ultra-strong, stable, and lightweight refractory multi-principal element alloys. Part I: design principles and rapid down-selection

Microstructural, phase, and thermophysical stability of CrMoNbV refractory multi-principal element alloys

Computational discovery of ultra-strong, stable, and lightweight refractory multi-principal element alloys. Part II: comprehensive ternary design and validation

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