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Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

IEEE electron device letters, 2022-06, Vol.43 (6), p.938-941

2022

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Functional and Consumption Analysis of Integrated Circuits Supplied by Inductive Power Transfer by Powering Modulation and Lock-In Infrared Imaging

IEEE transactions on industrial electronics (1982), 2015-12, Vol.62 (12), p.7774-7785

2015

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Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes

Journal of physics. D, Applied physics, 2014-09, Vol.47 (38), p.385101-10

2014

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Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography

Applied physics letters, 2013-02, Vol.102 (5)

2013

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Physically based analysis of electrical frequency response of passive microelectronic circuits by heterodyne lock-in thermal means

Journal of physics. D, Applied physics, 2013-11, Vol.46 (44), p.445501-1-11

2013

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A Survey of Wide Bandgap Power Semiconductor Devices

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2155-2163

2014

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Thermal cycling analysis of high temperature die-attach materials

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2314-2320

2012

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Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1834-1839

2006

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Enhanced power cycling capability of SiC Schottky diodes using press pack contacts

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2250-2255

2012

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Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2207-2212

2014

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Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1839-1844

2014

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Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

Applied thermal engineering, 2011-07, Vol.31 (10), p.1664-1672

2011

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Current Crowding Study by IIR-LD in a 1.2 kV SiC Schottky Diode

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.66-69

2020

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Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

IEEE transactions on industrial electronics (1982), 2024-05, Vol.71 (5), p.1-10

2024

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Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2471-2476

2012

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Design for reliability of solid state lighting systems

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2294-2300

2012

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IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes

Materials science forum, 2015-06, Vol.821-823, p.801-805

2015

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Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux Sensing

IEEE electron device letters, 2008-10, Vol.29 (10), p.1142-1144

2008

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Laser beam deflection-based perimeter scanning of integrated circuits for local overheating location

Journal of physics. D, Applied physics, 2009-01, Vol.42 (1), p.012002-012002 (4)

2009

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Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers

Microelectronic engineering, 2010-11, Vol.87 (11), p.2323-2327

2010

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A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits

Measurement science & technology, 2008-11, Vol.19 (11), p.115704-115704 (8)

2008

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Irradiance-based emissivity correction in infrared thermography for electronic applications

Review of scientific instruments, 2011-11, Vol.82 (11), p.114901-114901-9

2011

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Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1784-1789

2007

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P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

IEEE electron device letters, 2017-04, Vol.38 (4), p.505-508

2017

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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2261-2271

2014

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Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

Functional and Consumption Analysis of Integrated Circuits Supplied by Inductive Power Transfer by Powering Modulation and Lock-In Infrared Imaging

Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes

Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography

Physically based analysis of electrical frequency response of passive microelectronic circuits by heterodyne lock-in thermal means

A Survey of Wide Bandgap Power Semiconductor Devices

Thermal cycling analysis of high temperature die-attach materials

Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current

Enhanced power cycling capability of SiC Schottky diodes using press pack contacts

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

Current Crowding Study by IIR-LD in a 1.2 kV SiC Schottky Diode

Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling

Design for reliability of solid state lighting systems

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes

Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux Sensing

Laser beam deflection-based perimeter scanning of integrated circuits for local overheating location

Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers

A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits

Irradiance-based emissivity correction in infrared thermography for electronic applications

Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

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