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Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices

Microelectronic engineering, 2017-06, Vol.178, p.61-65

2017

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Characterization of HfO2-based devices with indication of second order memristor effects

Microelectronic engineering, 2018-08, Vol.195, p.101-106

2018

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Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2038-2045

2017

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IEEE_Xplore

Atomistic mechanisms of copper filament formation and composition in Al2O3-based conductive bridge random access memory

Journal of applied physics, 2017-07, Vol.122 (2)

2017

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Carbon-doped GeTe: A promising material for Phase-Change Memories

Solid-state electronics, 2011-11, Vol.65-66, p.197-204

2011

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Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2483-2489

2011

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IEEE_Xplore

Chemical vapor deposition of Ge nanocrystals on SiO2

Applied physics letters, 2003-08, Vol.83 (7), p.1444-1446

2003

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Accurate analysis of parasitic current overshoot during forming operation in RRAMs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1129-1132

2011

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Material engineering of GexTe100−x compounds to improve phase-change memory performances

Solid-state electronics, 2013-11, Vol.89, p.93-100

2013

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Degradation of floating-gate memory reliability by few electron phenomena

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2610-2619

2006

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IEEE_Xplore

Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

Solid-state electronics, 2013-01, Vol.79, p.227-232

2013

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Crystallization study of "melt quenched" amorphous GeTe by transmission electron microscopy for phase change memory applications

Applied physics letters, 2011-12, Vol.99 (24), p.243103-243103-3

2011

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Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity

AIP advances, 2013-01, Vol.3 (1), p.012105-012105

2013

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Emerging resistive memories for low power embedded applications and neuromorphic systems

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.3088-3091

2015

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IEEE_Xplore

Program efficiency and high temperature retention of SiN/high- K based memories

Microelectronic engineering, 2009-07, Vol.86 (7), p.1830-1833

2009

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Reliability of charge trapping memories with high- k control dielectrics (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1796-1803

2009

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Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells

Microelectronic engineering, 2011-05, Vol.88 (5), p.827-832

2011

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Physical aspects of low power synapses based on phase change memory devices

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance

IEEE Conferences, 2015, p.T98-T99

2015

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High temperature reliability of μtrench Phase-Change Memory devices

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1928-1931

2012

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Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

Frontiers in neuroscience, 2016-11, Vol.10 (NOV), p.474-474

2016

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A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4479-4485

2017

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IEEE_Xplore

Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

Journal of applied physics, 2006-10, Vol.100 (8), p.086104-086104-3

2006

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Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

Solid-state electronics, 2009-07, Vol.53 (7), p.786-791

2009

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Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories

IEEE transactions on nanotechnology, 2005-05, Vol.4 (3), p.360-368

2005

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IEEE_Xplore

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Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices

Characterization of HfO2-based devices with indication of second order memristor effects

Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells

Atomistic mechanisms of copper filament formation and composition in Al2O3-based conductive bridge random access memory

Carbon-doped GeTe: A promising material for Phase-Change Memories

Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

Chemical vapor deposition of Ge nanocrystals on SiO2

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

Material engineering of GexTe100−x compounds to improve phase-change memory performances

Degradation of floating-gate memory reliability by few electron phenomena

Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

Crystallization study of "melt quenched" amorphous GeTe by transmission electron microscopy for phase change memory applications

Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity

Emerging resistive memories for low power embedded applications and neuromorphic systems

Program efficiency and high temperature retention of SiN/high- K based memories

Reliability of charge trapping memories with high- k control dielectrics (Invited Paper)

Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells

Physical aspects of low power synapses based on phase change memory devices

Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance

High temperature reliability of μtrench Phase-Change Memory devices

Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations

Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories

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