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Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop

Physical review letters, 2013-04, Vol.110 (17), p.177406-177406, Article 177406

2013

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Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Physical review. B, 2017-04, Vol.95 (14), p.144205, Article 144205

2017

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Polarized Luminescence of Anisotropic LaPO4:Eu Nanocrystal Polymorphs

Journal of the American Chemical Society, 2018-08, Vol.140 (30), p.9512-9517

2018

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The efficiency challenge of nitride light-emitting diodes for lighting

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.899-913

2015

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Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography

Nature nanotechnology, 2017-09, Vol.12 (9), p.914-919

2017

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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Physical review. B, 2017-04, Vol.95 (14), p.144206, Article 144206

2017

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Light‐tunable optical cell manipulation via photoactive azobenzene‐containing thin film bio‐substrate

Nano select, 2022-09, Vol.3 (9), p.1337-1343

2022

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Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop

Physical review. B, 2019-09, Vol.100 (12), Article 125303

2019

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Apertureless near-field optical microscopy: A study of the local tip field enhancement using photosensitive azobenzene-containing films

Journal of applied physics, 2003-08, Vol.94 (3), p.2060-2072

2003

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Correction to “Surface Plasmon-Enhanced Fluorescence Spectroscopy on Silver Based SPR Substrates”

Journal of physical chemistry. C, 2024-06, Vol.128 (22), p.9407-9409

2024

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Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Applied physics letters, 2023-05, Vol.122 (21)

2023

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Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs

Applied physics letters, 2021-08, Vol.119 (5)

2021

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Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe

Proceedings of the National Academy of Sciences - PNAS, 2020-09, Vol.117 (36), p.21962-21967

2020

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Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy

Physical review. B, Condensed matter and materials physics, 2014-06, Vol.89 (23), Article 235124

2014

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Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces

physica status solidi (b), 2023-05, Vol.260 (5), p.n/a

2023

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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Applied physics letters, 2020-03, Vol.116 (9)

2020

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Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Applied physics letters, 2023-07, Vol.123 (3)

2023

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Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces

physica status solidi (b), 2023-05, Vol.260 (5), p.n/a

2023

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A Systematic Study of Spin‐Dependent Recombination in GaAs 1− x N x as a Function of Nitrogen Content

physica status solidi (b), 2023-05, Vol.260 (5)

2023

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Optically Anisotropic Thin Films by Shear-Oriented Assembly of Colloidal Nanorods

Advanced materials (Weinheim), 2013-06, Vol.25 (24), p.3295-3300

2013

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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Applied physics letters, 2020-03, Vol.116 (9)

2020

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Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds

Physical review letters, 2022-11, Vol.129 (21), p.216602-216602, Article 216602

2022

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Origin of electrons emitted into vacuum from InGaN light emitting diodes

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Investigation of the cesium activation of Ga N photocathodes by low-energy electron microscopy

Physical review applied, 2024-09, Vol.22 (3), Article 034005

2024

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Polarizers, optical bridges, and Sagnac interferometers for nanoradian polarization rotation measurements

Review of scientific instruments, 2017-04, Vol.88 (4)

2017

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Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Polarized Luminescence of Anisotropic LaPO4:Eu Nanocrystal Polymorphs

The efficiency challenge of nitride light-emitting diodes for lighting

Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Light‐tunable optical cell manipulation via photoactive azobenzene‐containing thin film bio‐substrate

Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop

Apertureless near-field optical microscopy: A study of the local tip field enhancement using photosensitive azobenzene-containing films

Correction to “Surface Plasmon-Enhanced Fluorescence Spectroscopy on Silver Based SPR Substrates”

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs

Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe

Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy

Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces

A Systematic Study of Spin‐Dependent Recombination in GaAs 1− x N x as a Function of Nitrogen Content

Optically Anisotropic Thin Films by Shear-Oriented Assembly of Colloidal Nanorods

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds

Origin of electrons emitted into vacuum from InGaN light emitting diodes

Investigation of the cesium activation of Ga N photocathodes by low-energy electron microscopy

Polarizers, optical bridges, and Sagnac interferometers for nanoradian polarization rotation measurements

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