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Numerical Model of SPAD-Based Direct Time-of-Flight Flash LIDAR CMOS Image Sensors

Sensors (Basel, Switzerland), 2020-09, Vol.20 (18), p.5203

2020

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Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

Sensors (Basel, Switzerland), 2016-05, Vol.16 (5), p.745

2016

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A Low-Noise Direct Incremental A/D Converter for FET-Based THz Imaging Detectors

Sensors (Basel, Switzerland), 2018-06, Vol.18 (6), p.1867

2018

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A Readout Channel Optimized for Minimum NEP of a FET-Based THz Pixel

Journal of infrared, millimeter and terahertz waves, 2018-12, Vol.39 (12), p.1221-1235

2018

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High Dynamic Range Imaging with TDC-Based CMOS SPAD Arrays

Instruments (Basel), 2019-09, Vol.3 (3), p.38

2019

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Figures of Merit for Indirect Time-of-Flight 3D Cameras: Definition and Experimental Evaluation

Remote sensing (Basel, Switzerland), 2011-11, Vol.3 (11), p.2461-2472

2011

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Response Optimization of Antenna-Coupled FET Detectors for 0.85-to-1-THz Imaging

IEEE microwave and wireless components letters, 2018-10, Vol.28 (10), p.903-905

2018

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SEBAT-Based Readout for FET THz Detectors With Intrinsic Power-to-Frequency Conversion

IEEE sensors journal, 2022-04, Vol.22 (8), p.7763-7771

2022

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Super-resolution quantum imaging at the Heisenberg limit

Optica, 2018-09, Vol.5 (9), p.1150

2018

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A Compact Current- and Voltage-Mode Model of Antenna-Coupled FET Terahertz Detectors

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.471-478

2021

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Design and Characterization of a 43.2-ps and PVT-Resilient TDC for Single-Photon Imaging Arrays

IEEE transactions on circuits and systems. II, Express briefs, 2018-04, Vol.65 (4), p.411-415

2018

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A 64 \times 64-Pixels Digital Silicon Photomultiplier Direct TOF Sensor With 100-MPhotons/s/pixel Background Rejection and Imaging/Altimeter Mode With 0.14% Precision Up To 6 km for Spacecraft Navigation and Landing

IEEE journal of solid-state circuits, 2017-01, Vol.52 (1), p.151-160

2017

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A Range Image Sensor Based on 10-$\mu{\hbox {m}}$ Lock-In Pixels in 0.18-$\mu$m CMOS Imaging Technology

IEEE journal of solid-state circuits, 2011-01, Vol.46 (1), p.248-258

2011

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Characterization of space-momentum entangled photons with a time resolving CMOS SPAD array

Optics express, 2020-10, Vol.28 (21), p.31553-31571

2020

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A Methodology to Measure Input Power and Effective Area for Characterization of Direct THz Detectors

IEEE transactions on instrumentation and measurement, 2016-05, Vol.65 (5), p.1225-1231

2016

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Comparative evaluation of background-rejection techniques for SPAD-based LiDAR systems

Integration (Amsterdam), 2023-05, Vol.90, p.1-10

2023

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Signal-to-Noise Ratio in Pulsed Mode SiPMs for LiDAR Applications

2021 International Conference on IC Design and Technology (ICICDT), 2021, p.1-4

2021

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Antenna-Coupled Graphene Field-Effect Transistors as a Terahertz Imaging Array

IEEE transactions on terahertz science and technology, 2021-01, Vol.11 (1), p.70-78

2021

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Co-Design and Optimization of a 320 GHz On-Chip Antenna for THz detection in 65nm CMOS Technology

2021 International Conference on IC Design and Technology (ICICDT), 2021, p.1-4

2021

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A 0. 94-\mu \mathrm} Input Noise Pixel-Level Continuous Time \Sigma\Delta$ IADC Interface for THz Sensing

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.151-154

2021

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A Range Image Sensor Based on 10-μm Lock-In Pixels in 0.18-μm CMOS Imaging Technology

IEEE journal of solid-state circuits, 2011, Vol.46 (1), p.248-258

2011

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A 160 \times 120 Pixel Analog-Counting Single-Photon Imager With Time-Gating and Self-Referenced Column-Parallel A/D Conversion for Fluorescence Lifetime Imaging

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.155-167

2016

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A 32 × 32-Pixel CMOS Imager for Quantum Optics With Per-SPAD TDC, 19.48% Fill-Factor in a 44.64-μm Pitch Reaching 1-MHz Observation Rate

IEEE journal of solid-state circuits, 2020-10, Vol.55 (10), p.2819-2830

2020

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Session 34 Overview: Emerging Imaging Solutions

2021 IEEE International Solid-State Circuits Conference (ISSCC), 2021, Vol.64, p.478-479

2021

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Numerical Model of SPAD-Based Direct Time-of-Flight Flash LIDAR CMOS Image Sensors

Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

A Low-Noise Direct Incremental A/D Converter for FET-Based THz Imaging Detectors

A Readout Channel Optimized for Minimum NEP of a FET-Based THz Pixel

High Dynamic Range Imaging with TDC-Based CMOS SPAD Arrays

Figures of Merit for Indirect Time-of-Flight 3D Cameras: Definition and Experimental Evaluation

Response Optimization of Antenna-Coupled FET Detectors for 0.85-to-1-THz Imaging

SEBAT-Based Readout for FET THz Detectors With Intrinsic Power-to-Frequency Conversion

The MONDO Tracker: Characterisation and Study of Secondary Ultrafast Neutrons Production in Carbon Ion Radiotherapy

Super-resolution quantum imaging at the Heisenberg limit

A Compact Current- and Voltage-Mode Model of Antenna-Coupled FET Terahertz Detectors

Design and Characterization of a 43.2-ps and PVT-Resilient TDC for Single-Photon Imaging Arrays

A 64 \times 64-Pixels Digital Silicon Photomultiplier Direct TOF Sensor With 100-MPhotons/s/pixel Background Rejection and Imaging/Altimeter Mode With 0.14% Precision Up To 6 km for Spacecraft Navigation and Landing

A Range Image Sensor Based on 10-$\mu{\hbox {m}}$ Lock-In Pixels in 0.18-$\mu$m CMOS Imaging Technology

Characterization of space-momentum entangled photons with a time resolving CMOS SPAD array

A Methodology to Measure Input Power and Effective Area for Characterization of Direct THz Detectors

Comparative evaluation of background-rejection techniques for SPAD-based LiDAR systems

Signal-to-Noise Ratio in Pulsed Mode SiPMs for LiDAR Applications

Antenna-Coupled Graphene Field-Effect Transistors as a Terahertz Imaging Array

Co-Design and Optimization of a 320 GHz On-Chip Antenna for THz detection in 65nm CMOS Technology

A 0. 94-\mu \mathrm} Input Noise Pixel-Level Continuous Time \Sigma\Delta$ IADC Interface for THz Sensing

A Range Image Sensor Based on 10-μm Lock-In Pixels in 0.18-μm CMOS Imaging Technology

A 160 \times 120 Pixel Analog-Counting Single-Photon Imager With Time-Gating and Self-Referenced Column-Parallel A/D Conversion for Fluorescence Lifetime Imaging

A 32 × 32-Pixel CMOS Imager for Quantum Optics With Per-SPAD TDC, 19.48% Fill-Factor in a 44.64-μm Pitch Reaching 1-MHz Observation Rate

Session 34 Overview: Emerging Imaging Solutions

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