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Was the Pamir salient built along a Late Paleozoic embayment on the southern Asian margin?

Earth and planetary science letters, 2020-11, Vol.550, p.116554, Article 116554

2020

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Muztaghata Dome Miocene Eclogite Facies Metamorphism: A Record of Lower Crustal Evolution of the NE Pamir

Tectonics (Washington, D.C.), 2020-07, Vol.39 (7), p.n/a

2020

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Was cratonic Asia deeply subducted beneath the Pamir? Evidence from P–T conditions and tectonic affinities of Cenozoic Pamir crustal xenoliths

Journal of metamorphic geology, 2023-09, Vol.41 (7), p.925-965

2023

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A New Key Exchange Protocol Based on Infinite Non-Abelian Groups

Security and communication networks, 2022-03, Vol.2022, p.1-6

2022

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RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4065-4070

2017

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Lack of hepatic stimulator substance expression promotes hepatocellular carcinoma metastasis partly through ERK-activated epithelial–mesenchymal transition

Laboratory investigation, 2018-07, Vol.98 (7), p.871-882

2018

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Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.507-511

2015

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Wedge-shaped vertebrae is a risk factor for symptomatic upper lumbar disc herniation

Journal of orthopaedic surgery and research, 2019-08, Vol.14 (1), p.265-265, Article 265

2019

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Co-culture of oligodendrocytes and neurons can be used to assess drugs for axon regeneration in the central nervous system

Neural regeneration research, 2015-10, Vol.10 (10), p.1612-1616

2015

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Numerical simulation of fracture propagation in Russia carbonate reservoirs during refracturing

Petroleum science, 2022-12, Vol.19 (6), p.2781-2795

2022

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Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5), p.56502

2016

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InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017, p.1-3

2017

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High-efficiency organic light-emitting diodes of phosphorescent PtAg2 heterotrinuclear acetylide complexes supported by triphosphine

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017-03, Vol.5 (12), p.3072-3078

2017

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In-situ TEM observation of the evolution of helium bubbles in Mo during He + irradiation and post-irradiation annealing

Chinese physics B, 2021-08, Vol.30 (8), p.86109-125

2021

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Fabrication and optimization process of p-type Li: ZnO oxide semiconductor

Thin solid films, 2014-11, Vol.570, p.417-422

2014

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Magnetic capture volume derivation and multi-magnetic dipoles configuration design for spacecraft soft-docking

Advances in space research, 2019-04, Vol.63 (8), p.2399-2409

2019

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Engineering solid-state porosity of synthetic supercontainers via modification of exo-cavities

Inorganic chemistry communications, 2017-04, Vol.78, p.61-64

2017

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RF Performance of In Situ SiN x Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4065-4070

2017

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Optimal reconfigurations between equilibria of two-craft electromagnetic formations along manifolds

Aerospace science and technology, 2018-08, Vol.79, p.531-542

2018

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Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

Semiconductor science and technology, 2017-10, Vol.32 (10), p.105009

2017

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The intestinal absorption mechanism of chicoric acid and its bioavailability improvement with chitosan

Heliyon, 2022-07, Vol.8 (7), p.e09955-e09955, Article e09955

2022

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AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers

Microelectronics and reliability, 2018-04, Vol.83, p.238-241

2018

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Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN Schottky barrier diodes with anode edge AlON spacers

Journal of alloys and compounds, 2017-05, Vol.703, p.204-209

2017

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High Thermal Stability of GaN Schottky Diode with Diamond-Like Carbon (DLC) Anode Design

Journal of the Electrochemical Society, 2016-01, Vol.163 (3), p.H155-H158

2016

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The Characterization of InAlN/AlN/GaN HEMTs Using Silicon-on-Insulator (SOI) Substrate Technology

Journal of the Electrochemical Society, 2016-01, Vol.163 (2), p.H110-H114

2016

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Was the Pamir salient built along a Late Paleozoic embayment on the southern Asian margin?

Muztaghata Dome Miocene Eclogite Facies Metamorphism: A Record of Lower Crustal Evolution of the NE Pamir

Was cratonic Asia deeply subducted beneath the Pamir? Evidence from P–T conditions and tectonic affinities of Cenozoic Pamir crustal xenoliths

A New Key Exchange Protocol Based on Infinite Non-Abelian Groups

RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

Lack of hepatic stimulator substance expression promotes hepatocellular carcinoma metastasis partly through ERK-activated epithelial–mesenchymal transition

Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

Wedge-shaped vertebrae is a risk factor for symptomatic upper lumbar disc herniation

Co-culture of oligodendrocytes and neurons can be used to assess drugs for axon regeneration in the central nervous system

Numerical simulation of fracture propagation in Russia carbonate reservoirs during refracturing

Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement

InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

High-efficiency organic light-emitting diodes of phosphorescent PtAg2 heterotrinuclear acetylide complexes supported by triphosphine

In-situ TEM observation of the evolution of helium bubbles in Mo during He + irradiation and post-irradiation annealing

Fabrication and optimization process of p-type Li: ZnO oxide semiconductor

Magnetic capture volume derivation and multi-magnetic dipoles configuration design for spacecraft soft-docking

Engineering solid-state porosity of synthetic supercontainers via modification of exo-cavities

RF Performance of In Situ SiN x Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

Optimal reconfigurations between equilibria of two-craft electromagnetic formations along manifolds

Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

The intestinal absorption mechanism of chicoric acid and its bioavailability improvement with chitosan

AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers

Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN Schottky barrier diodes with anode edge AlON spacers

High Thermal Stability of GaN Schottky Diode with Diamond-Like Carbon (DLC) Anode Design

The Characterization of InAlN/AlN/GaN HEMTs Using Silicon-on-Insulator (SOI) Substrate Technology

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