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Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-6

2023

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Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

IEEE transactions on nanotechnology, 2022, Vol.21, p.328-331

2022

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Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

IEEE electron device letters, 2009-03, Vol.30 (3), p.225-227

2009

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Vertical GaN-Based LEDs With Naturally Textured Surface Formed by Patterned Sapphire Substrate With Self-Assembled Ag Nanodots as Etching Mask

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2919-2923

2015

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GaN-Based LEDs With AZO:Y Upper Contact

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.134-139

2010

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ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

IEEE electron device letters, 2022-09, Vol.43 (9), p.1451-1454

2022

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GaN-Based LEDs With GaN [Formula Omitted]-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

IEEE photonics technology letters, 2009-11, Vol.21 (22), p.1659

2009

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III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.140-144

2010

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GaN-Based LEDs With GaN \mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

IEEE photonics technology letters, 2009-11, Vol.21 (22), p.1659-1661

2009

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GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

Applied physics letters, 2010-08, Vol.97 (8)

2010

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First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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AlGaN-based ultraviolet photodetector with micropillar structures

Applied physics letters, 2010-03, Vol.96 (10), p.102104-102104-3

2010

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Targeting DNA junction sites by bis-intercalators induces topological changes with potent antitumor effects

Nucleic acids research, 2024-07, Vol.52 (15), p.9303-9316

2024

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ZrO 2 -HfO 2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

IEEE electron device letters, 2022-09, Vol.43 (9), p.1451-1454

2022

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Effects of Annealing Temperature on TiN/Hf 0.5 Zr 0.5 O 2 /TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

IEEE transactions on nanotechnology, 2022, Vol.21, p.328-331

2022

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Tension-Compression Asymmetry in an Extruded Mg Alloy AZ31: Texture and Strain Rate Effects

Materials science forum, 2016-03, Vol.849, p.109-113

2016

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GaN-Based LEDs With AZO:Y Upper Contact : Light-emitting diodes

IEEE transactions on electron devices, 2010, Vol.57 (1), p.134-139

2010

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Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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GaN-based light emitting diodes with embedded SiO 2 pillars and air gap array structures

Applied physics letters, 2010-08, Vol.97 (8), p.081103-081103-3

2010

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III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate : Light-emitting diodes

IEEE transactions on electron devices, 2010, Vol.57 (1), p.140-144

2010

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Catalytic oxidation of benzene over nanostructured porous Co_3O_4-CeO_2 composite catalysts

Journal of environmental sciences (China), 2011-12, Vol.23 (12), p.2078-2086

2011

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Investigation of In-Sn-Zn Composition on the Characterization of Submicron Channel Length Ultra-Thin Atomic Layer Deposited InSnZnO Channel Transistors

2024 IEEE Silicon Nanoelectronics Workshop (SNW), 2024, p.63-64

2024

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Clustering of Non-communicable Diseases Risk Factors in Healthy Adults Aged 35 Years and Older in Shenzhen, China

Biomedical and environmental sciences, 2017-09, Vol.30 (9), p.661-666

2017

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Electrophysiological and behavioral responses of Tenebrio molitor L. to fourteen kinds of plant volatiles

Journal of Asia-Pacific Entomology, 2016, 19(2), , pp.261-267

2016

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TWO-LAYER MODEL DESCRIPTION OF POLYMER THIN FILM DYNAMICS

Chinese journal of polymer science, 2013, Vol.31 (1), p.12-20

2013

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Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

Vertical GaN-Based LEDs With Naturally Textured Surface Formed by Patterned Sapphire Substrate With Self-Assembled Ag Nanodots as Etching Mask

GaN-Based LEDs With AZO:Y Upper Contact

ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

GaN-Based LEDs With GaN [Formula Omitted]-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

GaN-Based LEDs With GaN \mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

AlGaN-based ultraviolet photodetector with micropillar structures

Targeting DNA junction sites by bis-intercalators induces topological changes with potent antitumor effects

ZrO 2 -HfO 2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Effects of Annealing Temperature on TiN/Hf 0.5 Zr 0.5 O 2 /TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

Tension-Compression Asymmetry in an Extruded Mg Alloy AZ31: Texture and Strain Rate Effects

GaN-Based LEDs With AZO:Y Upper Contact : Light-emitting diodes

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

GaN-based light emitting diodes with embedded SiO 2 pillars and air gap array structures

III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate : Light-emitting diodes

Catalytic oxidation of benzene over nanostructured porous Co_3O_4-CeO_2 composite catalysts

Investigation of In-Sn-Zn Composition on the Characterization of Submicron Channel Length Ultra-Thin Atomic Layer Deposited InSnZnO Channel Transistors

Clustering of Non-communicable Diseases Risk Factors in Healthy Adults Aged 35 Years and Older in Shenzhen, China

Electrophysiological and behavioral responses of Tenebrio molitor L. to fourteen kinds of plant volatiles

TWO-LAYER MODEL DESCRIPTION OF POLYMER THIN FILM DYNAMICS

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