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Engaging Struggling Early Readers to Promote Reading Success: A Pilot Study of Reading by Design

Reading & writing quarterly, 2016-05, Vol.32 (3), p.273-297

2016

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Dry etching of GaN substrates for high-quality homoepitaxy

Applied physics letters, 1999-02, Vol.74 (8), p.1123-1125

1999

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Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

Journal of applied physics, 1998-07, Vol.84 (2), p.1155-1157

1998

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Low resistive p -type GaN using two-step rapid thermal annealing processes

Journal of applied physics, 2001-06, Vol.89 (12), p.8339-8341

2001

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Multiple-step annealing for 50% enhanced p-conductivity of GaN

Journal of crystal growth, 2001-09, Vol.230 (3), p.549-553

2001

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Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes

Journal of crystal growth, 1999-05, Vol.201, p.318-322

1999

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Epitaxy of ternary nitrides on GaN single crystals

Journal of crystal growth, 1999-03, Vol.198, p.1061-1065

1999

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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e26

1997

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Ion channeling studies of GaN layers on c-oriented sapphire

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136, p.1248-1252

1998

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Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.296-302

1997

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Donor-Acceptor Pair Transitions in GaN

Materials science forum, 1997-01, Vol.258-263, p.1113-1118

1997

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On Surface Cracking of Ammonia for MBE Growth of GaN

MRS proceedings, 1996, Vol.449, Article 161

1996

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Ion Scattering Studies of Defects In Gan Thin Films on C-Oriented Sapphire

MRS proceedings, 1998, Vol.512, Article 543

1998

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GaN Homoepitaxy for Device Applications

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.878-889

1999

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Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N 2 overpressure

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e15

1997

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Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

MRS proceedings, 1997, Vol.468, Article 293

1997

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NH3 as Nitrogen Source in MBE growth of GaN

MRS proceedings, 1995, Vol.395

1995

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Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N 2 overpressure

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e4

1997

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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e19

1996

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Determination of the dislocation densities in GaN on c-oriented sapphire

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e40

1996

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High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Japanese journal of applied physics, 1997-12, Vol.36 (12B), p.L1634-L1636

1997

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Device performance of ultra-violet emitting diodes grown by MBE

Journal of crystal growth, 1998-06, Vol.189-190, p.782-785

1998

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GaN Homoepitaxy for Device Applications

MRS proceedings, 1998, Vol.537, Article G10.2

1998

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Reactive MBE of group III nitrides : high-quality homoepitaxial GaN and ultra-violet light-emitting diodes

Journal of crystal growth, 1999, Vol.201202, p.318-322

1999

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Fundamentals, Material Properties and Device Performances in GaN MBE using On Surface Cracking of Ammonia

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

Volltextzugriff (PDF)

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Engaging Struggling Early Readers to Promote Reading Success: A Pilot Study of Reading by Design

Dry etching of GaN substrates for high-quality homoepitaxy

Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

Low resistive p -type GaN using two-step rapid thermal annealing processes

Multiple-step annealing for 50% enhanced p-conductivity of GaN

Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes

Epitaxy of ternary nitrides on GaN single crystals

Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

Ion channeling studies of GaN layers on c-oriented sapphire

Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

Donor-Acceptor Pair Transitions in GaN

On Surface Cracking of Ammonia for MBE Growth of GaN

Ion Scattering Studies of Defects In Gan Thin Films on C-Oriented Sapphire

GaN Homoepitaxy for Device Applications

Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N 2 overpressure

Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

NH3 as Nitrogen Source in MBE growth of GaN

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N 2 overpressure

Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

Determination of the dislocation densities in GaN on c-oriented sapphire

High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Device performance of ultra-violet emitting diodes grown by MBE

GaN Homoepitaxy for Device Applications

Reactive MBE of group III nitrides : high-quality homoepitaxial GaN and ultra-violet light-emitting diodes

Fundamentals, Material Properties and Device Performances in GaN MBE using On Surface Cracking of Ammonia

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