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Ultrasmall metal-insulator-metal nanoresonators: impact of slow-wave effects on the quality factor

Optics express, 2012-07, Vol.20 (15), p.16880-16891

2012

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Optical index measurement of InAs/GaSb type-II superlattice for mid-infrared photodetection at cryogenic temperatures

Applied physics letters, 2014-10, Vol.105 (14)

2014

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Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

Thin solid films, 2011-08, Vol.519 (21), p.7207-7211

2011

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Epsilon-near-zero mode for active optoelectronic devices

Physical review letters, 2012-12, Vol.109 (23), p.237401-237401, Article 237401

2012

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High- Q wet-etched GaAs microdisks containing InAs quantum boxes

Applied physics letters, 1999-09, Vol.75 (13), p.1908-1910

1999

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Surface plasmon coupling on metallic film perforated by two-dimensional rectangular hole array

Applied physics letters, 2008-01, Vol.92 (1), p.011125-011125-3

2008

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Electrical modulation of emissivity

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Generation and control of hot spots on commensurate metallic gratings

Optics express, 2008-11, Vol.16 (23), p.19127-19135

2008

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Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base

Solid-state electronics, 2010, Vol.54 (1), p.67-78

2010

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Characterization of Cu(In,Ga)Se Electrodeposited and Co-Evaporated Devices by Means of Concentrated Illumination

IEEE journal of photovoltaics, 2014-03, Vol.4 (2), p.693-696

2014

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Compact planar lenses based on a pinhole and an array of single mode metallic slits

Journal of the European Optical Society. Rapid publications, 2013-01, Vol.8, p.13071

2013

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High-speed, efficient metal - semiconductor - metal photodetectors

Quantum electronics (Woodbury, N.Y.), 2010-08, Vol.40 (5), p.421-424

2010

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Strong discontinuities in the complex photonic band structure of transmission metallic gratings

Physical review. B, Condensed matter, 2001, Vol.63 (3), Article 033107

2001

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Efficient light absorption in metal-semiconductor-metal nanostructures

Applied physics letters, 2004-07, Vol.85 (2), p.194-196

2004

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Plasmon dispersion diagram and localization effects in a three-cavity commensurate grating

Optics express, 2010-07, Vol.18 (14), p.14913-14925

2010

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Nano-fabrication with focused ion beams

Microelectronic engineering, 2001-09, Vol.57, p.865-875

2001

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Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy

Applied physics letters, 1998-05, Vol.72 (21), p.2730-2732

1998

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An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters

Solid-state electronics, 2008-11, Vol.52 (11), p.1742-1750

2008

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Investigating the optical behavior of electrochemically passivated highly doped n-InP with PPP nanofilm

Optical materials, 2023-07, Vol.141, p.113935, Article 113935

2023

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Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects

Computational materials science, 2002-05, Vol.24 (1-2), p.257-261

2002

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Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range

Applied optics (2004), 2012-05, Vol.51 (15), p.3031-3035

2012

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Tailoring GaAs terahertz radiative properties with surface phonons polaritons

Applied physics letters, 2010-10, Vol.97 (16), p.161101-161101-3

2010

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Transmitted acoustic phonon drag between parallel two-dimensional electron gases: Monte Carlo simulation

Semiconductor science and technology, 1994-05, Vol.9 (5S), p.806-810, Article 806

1994

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Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1292-1296

1995

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Influence of a depletion layer on localized surface waves in doped semiconductor nanostructures

Applied physics letters, 2012-02, Vol.100 (9), p.091103-091103-3

2012

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Ultrasmall metal-insulator-metal nanoresonators: impact of slow-wave effects on the quality factor

Optical index measurement of InAs/GaSb type-II superlattice for mid-infrared photodetection at cryogenic temperatures

Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

Epsilon-near-zero mode for active optoelectronic devices

High- Q wet-etched GaAs microdisks containing InAs quantum boxes

Surface plasmon coupling on metallic film perforated by two-dimensional rectangular hole array

Electrical modulation of emissivity

Generation and control of hot spots on commensurate metallic gratings

Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base

Characterization of Cu(In,Ga)Se Electrodeposited and Co-Evaporated Devices by Means of Concentrated Illumination

Compact planar lenses based on a pinhole and an array of single mode metallic slits

High-speed, efficient metal - semiconductor - metal photodetectors

Strong discontinuities in the complex photonic band structure of transmission metallic gratings

Efficient light absorption in metal-semiconductor-metal nanostructures

Plasmon dispersion diagram and localization effects in a three-cavity commensurate grating

Nano-fabrication with focused ion beams

Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy

An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters

Investigating the optical behavior of electrochemically passivated highly doped n-InP with PPP nanofilm

Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects

Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range

Tailoring GaAs terahertz radiative properties with surface phonons polaritons

Transmitted acoustic phonon drag between parallel two-dimensional electron gases: Monte Carlo simulation

Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates

Influence of a depletion layer on localized surface waves in doped semiconductor nanostructures

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