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Identification and characterization of a new soybean promoter induced by Phakopsora pachyrhizi, the causal agent of Asian soybean rust

BMC biotechnology, 2021-03, Vol.21 (1), p.27-27, Article 27

2021

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Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

Applied physics letters, 2019-10, Vol.115 (17)

2019

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Study of physisorption phenomena of chemical species on 300 mm Si wafers during controlled mini-environment transfers between microelectronic equipments

Microelectronic engineering, 2020-07, Vol.231, p.111401, Article 111401

2020

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Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels

Microelectronic engineering, 2018-02, Vol.187-188, p.84-89

2018

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Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Applied physics letters, 2006-07, Vol.89 (1)

2006

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Depth profiling investigation by pARXPS and MEIS of advanced transistor technology gate stack

Microelectronic engineering, 2017-02, Vol.169, p.24-28

2017

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Generation and analysis of soybean plastid transformants expressing Bacillus thuringiensis Cry1Ab protoxin

Plant molecular biology, 2005-07, Vol.58 (5), p.659-668

2005

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XPS study of the degradation mechanism of fluorinated anti-sticking treatments used in UV nanoimprint lithography

Microelectronic engineering, 2010-02, Vol.87 (2), p.122-124

2010

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Chemical vapor deposition of Ge nanocrystals on SiO2

Applied physics letters, 2003-08, Vol.83 (7), p.1444-1446

2003

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New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes

Plasma sources science & technology, 2005-08, Vol.14 (3), p.599-609

2005

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Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of physics. D, Applied physics, 2015-07, Vol.48 (26), p.1-10

2015

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Etch mechanisms of silicon gate structures patterned in SF6/CH2F2/Ar inductively coupled plasmas

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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PECVD RF versus dual frequency: an investigation of plasma influence on metal-organic precursors' decomposition and material characteristics

Journal of physics. D, Applied physics, 2014-05, Vol.47 (18), p.1-11

2014

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Bio-functionalization of silicon carbide nanostructures for SiC nanowire-based sensors realization

Journal of nanoscience and nanotechnology, 2014-05, Vol.14 (5), p.3391-3397

2014

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Process stability of SiO2 atomic layer etching in C4F6/Ar chemistry

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-12, Vol.42 (6)

2024

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HF contamination of 200 mm Al wafers: A parallel angle resolved XPS study

Microelectronic engineering, 2011-06, Vol.88 (6), p.861-866

2011

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Degradation and surfactant-aided regeneration of fluorinated anti-sticking mold treatments in UV nanoimprint lithography

Microelectronic engineering, 2010-05, Vol.87 (5), p.1029-1032

2010

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Mold cleaning and fluorinated anti-sticking treatments in nanoimprint lithography

Microelectronic engineering, 2009-04, Vol.86 (4), p.669-672

2009

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Patterning of narrow porous SiOCH trenches using a TiN hard mask

Microelectronic engineering, 2008-11, Vol.85 (11), p.2226-2235

2008

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Investigations on HCl contaminated Cu 200 mm wafers using Parallel Angle Resolved XPS

Microelectronic engineering, 2009-04, Vol.86 (4), p.1013-1016

2009

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Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

Applied physics letters, 2010-10, Vol.97 (15), p.152112

2010

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Parallel angle resolved XPS investigations on 12 in. wafers for the study of W and WSix oxidation in air

Microelectronic engineering, 2008-09, Vol.85 (9), p.1882-1887

2008

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Advances in light-curing units: four generations of LED lights and clinical implications for optimizing their use: Part 2. From present to future

Dental update, 2012, Vol.39 (1), p.13-22

2012

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XPS analysis with an ultra clean vacuum substrate carrier for oxidation and airborne molecular contamination prevention

Microelectronic engineering, 2008, Vol.85 (1), p.151-155

2008

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Investigation on full 6′′ masks using innovative solutions for direct physico-chemical analyses of mask backglass contamination and haze

Microelectronic engineering, 2013-04, Vol.104, p.120-129

2013

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Identification and characterization of a new soybean promoter induced by Phakopsora pachyrhizi, the causal agent of Asian soybean rust

Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

Study of physisorption phenomena of chemical species on 300 mm Si wafers during controlled mini-environment transfers between microelectronic equipments

Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Depth profiling investigation by pARXPS and MEIS of advanced transistor technology gate stack

Generation and analysis of soybean plastid transformants expressing Bacillus thuringiensis Cry1Ab protoxin

XPS study of the degradation mechanism of fluorinated anti-sticking treatments used in UV nanoimprint lithography

Chemical vapor deposition of Ge nanocrystals on SiO2

New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes

Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Etch mechanisms of silicon gate structures patterned in SF6/CH2F2/Ar inductively coupled plasmas

PECVD RF versus dual frequency: an investigation of plasma influence on metal-organic precursors' decomposition and material characteristics

Bio-functionalization of silicon carbide nanostructures for SiC nanowire-based sensors realization

Process stability of SiO2 atomic layer etching in C4F6/Ar chemistry

HF contamination of 200 mm Al wafers: A parallel angle resolved XPS study

Degradation and surfactant-aided regeneration of fluorinated anti-sticking mold treatments in UV nanoimprint lithography

Mold cleaning and fluorinated anti-sticking treatments in nanoimprint lithography

Patterning of narrow porous SiOCH trenches using a TiN hard mask

Investigations on HCl contaminated Cu 200 mm wafers using Parallel Angle Resolved XPS

Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

Parallel angle resolved XPS investigations on 12 in. wafers for the study of W and WSix oxidation in air

Advances in light-curing units: four generations of LED lights and clinical implications for optimizing their use: Part 2. From present to future

XPS analysis with an ultra clean vacuum substrate carrier for oxidation and airborne molecular contamination prevention

Investigation on full 6′′ masks using innovative solutions for direct physico-chemical analyses of mask backglass contamination and haze

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