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Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma

Plasma sources science & technology, 2009-05, Vol.18 (2), p.025001-025001 (10)

2009

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Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

Journal of physics. D, Applied physics, 2006-05, Vol.39 (9), p.1830-1845

2006

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Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-03, Vol.28 (2), p.277-286

2010

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Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-03, Vol.23 (2), p.226-233

2005

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Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy

Applied surface science, 1993-08, Vol.68 (4), p.595-603

1993

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Etching of low-k materials in high density fluorocarbon plasma

European physical journal. Applied physics, 2004-12, Vol.28 (3), p.331-337

2004

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Surface modification of Si-containing polymers during etching for bilayer lithography

Microelectronic engineering, 2002-07, Vol.61, p.901-906

2002

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Plasma etching: principles, mechanisms, application to micro- and nano-technologies

Applied surface science, 2000-09, Vol.164 (1), p.72-83

2000

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SiO2/Si selectivity in high density CHF3/CH4 plasmas : Role of the fluorocarbon layer

Microelectronic engineering, 2000-06, Vol.53 (1-4), p.375-379

2000

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High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

Microelectronic engineering, 2000-06, Vol.53 (1), p.501-505

2000

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Contact Etching Process Characterization by Using Angular X‐Ray Photoelectron Spectroscopy Technique

Journal of the Electrochemical Society, 1996-04, Vol.143 (4), p.1347-1354

1996

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Etching processes of tungsten in SF6-O2 radio-frequency plasmas

Journal of applied physics, 1991-09, Vol.70 (6), p.3314-3323

1991

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Surface modelling of reactive ion etching of silicon-germanium alloys in a SF6 plasma

Surface & coatings technology, 1997-12, Vol.97 (1-3), p.465-468

1997

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Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis

Applied surface science, 2000-09, Vol.164 (1), p.147-155

2000

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New polymer materials for nanoimprinting

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-07, Vol.18 (4), p.1861-1865

2000

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Kinetics of formation of sulfur dimers in pure SF6 and SF6-O2 discharges

Plasma chemistry and plasma processing, 1990-12, Vol.10 (4), p.553-569

1990

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Etching mechanisms of Si and SiO 2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

Journal of physics. D, Applied physics, 2006-05, Vol.39 (9), p.1830-1845

2006

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A Kinetic Study of Reactive Ion Etching of Tungsten in SF 6 / O 2 RF Plasmas

Journal of the Electrochemical Society, 1993-02, Vol.140 (2), p.505-512

1993

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Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.174-182

2003

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Aspect ratio effects in submicron contact hole plasma etching investigated by quantitative x-ray photoelectron spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-05, Vol.15 (3), p.579-584

1997

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Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H2 and influence of the residence time

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-07, Vol.20 (4), p.1514-1521

2002

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Etching mechanisms of Si and SiO 2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-03, Vol.23 (2), p.226-233

2005

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Etching mechanisms of Si and SiO{sub 2} in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-03, Vol.23 (2)

2005

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Etching studies of silica glasses in SF 6 / Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-03, Vol.28 (2), p.277-286

2010

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Global model and diagnostic of a low-pressure SF 6 /Ar inductively coupled plasma

Plasma sources science & technology, 2009-05, Vol.18 (2), p.25001

2009

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Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma

Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy

Etching of low-k materials in high density fluorocarbon plasma

Surface modification of Si-containing polymers during etching for bilayer lithography

Plasma etching: principles, mechanisms, application to micro- and nano-technologies

SiO2/Si selectivity in high density CHF3/CH4 plasmas : Role of the fluorocarbon layer

High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

Contact Etching Process Characterization by Using Angular X‐Ray Photoelectron Spectroscopy Technique

Etching processes of tungsten in SF6-O2 radio-frequency plasmas

Surface modelling of reactive ion etching of silicon-germanium alloys in a SF6 plasma

Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis

New polymer materials for nanoimprinting

Kinetics of formation of sulfur dimers in pure SF6 and SF6-O2 discharges

Etching mechanisms of Si and SiO 2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

A Kinetic Study of Reactive Ion Etching of Tungsten in SF 6 / O 2 RF Plasmas

Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane

Aspect ratio effects in submicron contact hole plasma etching investigated by quantitative x-ray photoelectron spectroscopy

Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H2 and influence of the residence time

Etching mechanisms of Si and SiO 2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Etching mechanisms of Si and SiO{sub 2} in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Etching studies of silica glasses in SF 6 / Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

Global model and diagnostic of a low-pressure SF 6 /Ar inductively coupled plasma

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