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Automatic Methodology for Wideband Power Amplifier Design

IEEE microwave and wireless components letters, 2021-08, Vol.31 (8), p.989-992

2021

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New Transistor Behavioral Model Formulation Suitable for Doherty PA Design

IEEE transactions on microwave theory and techniques, 2021-04, Vol.69 (4), p.2138-2147

2021

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Nonlinear compensation with DBP aided by a memory polynomial

Optics express, 2016-12, Vol.24 (26), p.30309-30316

2016

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Memristive Properties of GaN HEMTs Containing Deep‐Level Traps

physica status solidi (b), 2019-05, Vol.256 (5), p.n/a

2019

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A new complex envelope behavioral model for load mismatched power amplifiers

International journal of RF and microwave computer-aided engineering, 2017-08, Vol.27 (6), p.n/a

2017

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Pulsed I/V and S‐parameters measurement system for isodynamic characterization of power GaN HEMT transistors

International journal of RF and microwave computer-aided engineering, 2018-10, Vol.28 (8), p.e21515-n/a

2018

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Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection

International journal of numerical modelling, 2017-01, Vol.30 (1), p.np-n/a

2017

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Radio frequency carrier amplitude-burst transmitters – from architecture to circuit

IET microwaves, antennas & propagation, 2015-02, Vol.9 (3), p.271-280

2015

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Sequential LMBA Design Technique for Improved Bandwidth Considering the Balanced Amplifiers off-State Impedance

IEEE transactions on microwave theory and techniques, 2023-08, Vol.71 (8), p.1-15

2023

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Efficient RF Circuit Simulation Using an Innovative Mixed Time-Frequency Method

IEEE transactions on microwave theory and techniques, 2011-04, Vol.59 (4), p.827-836

2011

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Power, Linearity, and Efficiency Prediction for MIMO Arrays With Antenna Coupling

IEEE transactions on microwave theory and techniques, 2017-12, Vol.65 (12), p.5284-5297

2017

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A Hammerstein-Like Broadband ANN-Based Transistor Behavioral Model

IEEE transactions on microwave theory and techniques, 2024-06, Vol.72 (6), p.3288-3299

2024

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AM/AM and AM/PM Distortion Generation Mechanisms in Si LDMOS and GaN HEMT Based RF Power Amplifiers

IEEE transactions on microwave theory and techniques, 2014-04, Vol.62 (4), p.799-809

2014

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Dynamic Deviation Reduction-Based Volterra Behavioral Modeling of RF Power Amplifiers

IEEE transactions on microwave theory and techniques, 2006-12, Vol.54 (12), p.4323-4332

2006

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The Effect of IMD Drain Impedances in RF PA Concurrent Dual-Band Operation

IEEE transactions on microwave theory and techniques, 2023-07, Vol.71 (7), p.1-14

2023

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On the Energy Nonconservation in the FET's Equivalent Circuit Capacitance Model

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4808-4814

2023

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Efficiency Degradation Analysis in Wideband Power Amplifiers

IEEE transactions on microwave theory and techniques, 2018-12, Vol.66 (12), p.5640-5651

2018

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Behavioral Modeling of IC Memories From Measured Data

IEEE transactions on instrumentation and measurement, 2011-10, Vol.60 (10), p.3471-3479

2011

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Broadband SLMBA Design Including 90° Hybrid Frequency Response using an Automatic Methodology

IEEE access, 2023-01, Vol.11, p.1-1

2023

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Radio Frequency Numerical Simulation Techniques Based on Multirate Runge-Kutta Schemes

Journal of Applied Mathematics, 2012-01, Vol.2012 (2012), p.77-97-405

2012

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A Multiple-Line Double Multirate Shooting Technique for the Simulation of Heterogeneous RF Circuits

IEEE transactions on microwave theory and techniques, 2009-02, Vol.57 (2), p.421-429

2009

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Recent Developments on Hybrid Time-Frequency Numerical Simulation Techniques for RF and Microwave Applications

Journal of function spaces, 2013-01, Vol.2013 (2013), p.1-11

2013

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Theory and Design of Doherty Power Amplifier With Active Harmonic Injection

IEEE access, 2024, Vol.12, p.41631-41642

2024

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The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers

IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1377-1390

2022

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Design of a Power-Amplifier Feed-Forward RF Model With Physical Knowledge Considerations

IEEE transactions on microwave theory and techniques, 2007-12, Vol.55 (12), p.2747-2756

2007

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Automatic Methodology for Wideband Power Amplifier Design

New Transistor Behavioral Model Formulation Suitable for Doherty PA Design

Nonlinear compensation with DBP aided by a memory polynomial

Memristive Properties of GaN HEMTs Containing Deep‐Level Traps

A new complex envelope behavioral model for load mismatched power amplifiers

Pulsed I/V and S‐parameters measurement system for isodynamic characterization of power GaN HEMT transistors

Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection

Radio frequency carrier amplitude-burst transmitters – from architecture to circuit

Sequential LMBA Design Technique for Improved Bandwidth Considering the Balanced Amplifiers off-State Impedance

Efficient RF Circuit Simulation Using an Innovative Mixed Time-Frequency Method

Power, Linearity, and Efficiency Prediction for MIMO Arrays With Antenna Coupling

A Hammerstein-Like Broadband ANN-Based Transistor Behavioral Model

AM/AM and AM/PM Distortion Generation Mechanisms in Si LDMOS and GaN HEMT Based RF Power Amplifiers

Dynamic Deviation Reduction-Based Volterra Behavioral Modeling of RF Power Amplifiers

The Effect of IMD Drain Impedances in RF PA Concurrent Dual-Band Operation

On the Energy Nonconservation in the FET's Equivalent Circuit Capacitance Model

Efficiency Degradation Analysis in Wideband Power Amplifiers

Behavioral Modeling of IC Memories From Measured Data

Broadband SLMBA Design Including 90° Hybrid Frequency Response using an Automatic Methodology

Radio Frequency Numerical Simulation Techniques Based on Multirate Runge-Kutta Schemes

A Multiple-Line Double Multirate Shooting Technique for the Simulation of Heterogeneous RF Circuits

Recent Developments on Hybrid Time-Frequency Numerical Simulation Techniques for RF and Microwave Applications

Theory and Design of Doherty Power Amplifier With Active Harmonic Injection

The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers

Design of a Power-Amplifier Feed-Forward RF Model With Physical Knowledge Considerations

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