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Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Conductive CaSi2 transparent in the near infra-red range

Journal of alloys and compounds, 2019-01, Vol.770, p.710-720

2019

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Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials science in semiconductor processing, 2019-07, Vol.97, p.35-39

2019

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Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites

Electronic Materials Letters, 2015, 11(3), , pp.424-428

2015

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CVT and PVT growth and characterization of GaS crystals

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-11, Vol.261, p.114623, Article 114623

2020

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Photoluminescence of samples produced by electroless wet chemical etching: Between silicon nanowires and porous structures

Physica status solidi. A, Applications and materials science, 2011-04, Vol.208 (4), p.893-899

2011

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Diffusion in GaN/AlN superlattices: DFT and EXAFS study

Applied surface science, 2020-06, Vol.515, p.146001, Article 146001

2020

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The real structure of epsilon -Ga2O3 and its relation to Kappa -phase

CrystEngComm, 2017-03, Vol.19 (11), p.1509-1516

2017

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Indium Nitride at the 2D Limit

Advanced materials (Weinheim), 2021-01, Vol.33 (1), p.e2006660-n/a

2021

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Electrochemical corrosion and electrochemical migration characteristics of SAC-1Bi-xMn solder alloys in NaCl solution

Corrosion science, 2023-04, Vol.213, p.110965, Article 110965

2023

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2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface

CrystEngComm, 2023-10, Vol.25 (41), p.581-5817

2023

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Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Materials science in semiconductor processing, 2024-05, Vol.174, p.108244, Article 108244

2024

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Diamond-Graphene Composite Nanostructures

Nano letters, 2020-05, Vol.20 (5), p.3611-3619

2020

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Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.650-653

2012

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Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Jpn J Appl Phys, 2010-11, Vol.49 (11), p.116506-116506-5

2010

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Atomic layer deposited Fe-sulfide layers with pyrrhotite structure controlled by the deposition temperature

Thin solid films, 2024-04, Vol.794, p.140267, Article 140267

2024

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Material proposal for 2D indium oxide

Applied surface science, 2021-05, Vol.548, p.149275, Article 149275

2021

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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Applied physics letters, 2024-06, Vol.124 (24)

2024

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Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2939-2947

2018

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On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition

Physica status solidi. B, Basic research, 2023-10, Vol.260 (10)

2023

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Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

Acta materialia, 2016-01, Vol.103, p.141-152

2016

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Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

Materials science in semiconductor processing, 2024-05, Vol.174, p.108220, Article 108220

2024

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Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Applied physics letters, 2015-06, Vol.106 (22)

2015

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Editorial of the Special Issue “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”

Materials science in semiconductor processing, 2019-11, Vol.102, p.104581, Article 104581

2019

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Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Conductive CaSi2 transparent in the near infra-red range

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites

CVT and PVT growth and characterization of GaS crystals

Photoluminescence of samples produced by electroless wet chemical etching: Between silicon nanowires and porous structures

Diffusion in GaN/AlN superlattices: DFT and EXAFS study

The real structure of epsilon -Ga2O3 and its relation to Kappa -phase

Indium Nitride at the 2D Limit

Electrochemical corrosion and electrochemical migration characteristics of SAC-1Bi-xMn solder alloys in NaCl solution

2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface

Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Diamond-Graphene Composite Nanostructures

Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Atomic layer deposited Fe-sulfide layers with pyrrhotite structure controlled by the deposition temperature

Material proposal for 2D indium oxide

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Editorial of the Special Issue “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”

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