UB Paderborn / Katalog / Suche / in CDI

In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3

Acta materialia, 2020-01, Vol.183, p.216-227

2020

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Thermal stability of ε-Ga2O3 polymorph

Acta materialia, 2017-11, Vol.140, p.411-416

2017

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Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

Applied physics letters, 2023-09, Vol.123 (13)

2023

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Anomalous effect of ion velocity on track formation in GeS

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-12, Vol.389-390, p.17-22

2016

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Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

Applied surface science, 2023-09, Vol.631, p.157513, Article 157513

2023

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Realization of Vertical and Zigzag Single Crystalline Silicon Nanowire Architectures

Journal of physical chemistry. C, 2010-03, Vol.114 (9), p.3798-3803

2010

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Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films

Microelectronic engineering, 2023-04, Vol.274, p.111967, Article 111967

2023

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Graphene integration with nitride semiconductors for high power and high frequency electronics

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials science in semiconductor processing, 2019-05, Vol.94, p.164-170

2019

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Semitransparent and conductive CaSi2 films for silicon device applications

Japanese Journal of Applied Physics, 2020-04, Vol.59, p.1

2020

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Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

CrystEngComm, 2016-01, Vol.18 (15), p.277-2779

2016

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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Applied surface science, 2020-10, Vol.528, p.146824, Article 146824

2020

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Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

Thin solid films, 2014-07, Vol.562, p.485-489

2014

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Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si

Journal of applied physics, 2016-02, Vol.119 (6)

2016

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The Effect of Heavy Cosmic-Ray Ions on Silicate Grains in the Interstellar Dust

The Astrophysical journal, 2010-01, Vol.708 (1), p.288-292

2010

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Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling

Applied surface science, 2014-10, Vol.316, p.301-307

2014

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Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates

Journal of applied physics, 2011-02, Vol.109 (4), p.43507-43507-8

2011

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Diamond overgrown InAlN/GaN HEMT

Diamond and related materials, 2011-04, Vol.20 (4), p.604-608

2011

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Post-selenization of stacked precursor layers for CIGS

Vacuum, 2013-06, Vol.92, p.44-51

2013

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ZnO layers deposited by Atomic Layer Deposition

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.12015-4

2013

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GaN heterostructures with diamond and graphene

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114001

2015

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Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

Applied surface science, 2010-09, Vol.256 (23), p.7331-7334

2010

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Effect of nitrogen-incorporation on structure, properties and performance of magnetron sputtered CrB2

Surface & coatings technology, 2008-03, Vol.202 (13), p.3088-3093

2008

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Characterization of ZnO:Al/Au/ZnO:Al trilayers for high performance transparent conducting electrodes

Thin solid films, 2010-12, Vol.519 (4), p.1470-1474

2010

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TEM study of defects in AlxGa1−xN layers with different polarity

Journal of crystal growth, 2012-01, Vol.338 (1), p.30-34

2012

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In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3

Thermal stability of ε-Ga2O3 polymorph

Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

Anomalous effect of ion velocity on track formation in GeS

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

Realization of Vertical and Zigzag Single Crystalline Silicon Nanowire Architectures

Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films

Graphene integration with nitride semiconductors for high power and high frequency electronics

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Semitransparent and conductive CaSi2 films for silicon device applications

Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si

The Effect of Heavy Cosmic-Ray Ions on Silicate Grains in the Interstellar Dust

Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling

Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates

Diamond overgrown InAlN/GaN HEMT

Post-selenization of stacked precursor layers for CIGS

ZnO layers deposited by Atomic Layer Deposition

GaN heterostructures with diamond and graphene

Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

Effect of nitrogen-incorporation on structure, properties and performance of magnetron sputtered CrB2

Characterization of ZnO:Al/Au/ZnO:Al trilayers for high performance transparent conducting electrodes

TEM study of defects in AlxGa1−xN layers with different polarity

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