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Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Journal of applied physics, 2018-12, Vol.124 (22)

2018

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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Recent progress in processing and properties of ZnO

Progress in materials science, 2005-03, Vol.50 (3), p.293-340

2005

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Radiation effects in GaN materials and devices

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (5), p.877-887

2013

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Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications

1, 2006

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Recent advances in wide bandgap semiconductor biological and gas sensors

Progress in materials science, 2010, Vol.55 (1), p.1-59

2010

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Gallium Oxide: Technology, Devices and Applications

1, 2018

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GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Journal of physics. Condensed matter, 2004-07, Vol.16 (29), p.R961-R994

2004

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ZnO nanowire growth and devices

Materials science & engineering. R, Reports : a review journal, 2004-12, Vol.47 (1), p.1-47

2004

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Dilute magnetic semiconducting oxides

Semiconductor science and technology, 2004-10, Vol.19 (10), p.R59-R74

2004

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Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Journal of applied physics, 2017-09, Vol.122 (11)

2017

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Oxygen and zinc vacancies in as-grown ZnO single crystals

Journal of physics. D, Applied physics, 2009-09, Vol.42 (17), p.175411-175411 (8)

2009

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Device processing and junction formation needs for ultra-high power Ga2O3 electronics

MRS communications, 2019-03, Vol.9 (1), p.77-87

2019

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Advances in wide bandgap materials for semiconductor spintronics

Materials science & engineering. R, Reports : a review journal, 2003-02, Vol.40 (4), p.137-168

2003

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Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices?

Nanoscale horizons, 2019-11, Vol.4 (6), p.1251-1255

2019

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Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

Journal of applied physics, 2005-10, Vol.98 (7), p.073502-073502-6

2005

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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2013-02, Vol.102 (6)

2013

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The role of annealing ambient on diffusion of implanted Si in β-Ga2O3

AIP advances, 2019-08, Vol.9 (8), p.085111-085111-6

2019

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Structure and magnetism of cobalt-doped ZnO thin films

New journal of physics, 2008-01, Vol.10 (6), p.065002

2008

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Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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Movement of basal plane dislocations in GaN during electron beam irradiation

Applied physics letters, 2015-03, Vol.106 (13)

2015

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Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition

Journal of materials science, 2008-11, Vol.43 (21), p.6925-6932

2008

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Hydrogen Sensing Using Pd-Functionalized Multi-Layer Graphene Nanoribbon Networks

Advanced materials (Weinheim), 2010-11, Vol.22 (43), p.4877-4880

2010

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Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Recent progress in processing and properties of ZnO

Radiation effects in GaN materials and devices

Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications

Recent advances in wide bandgap semiconductor biological and gas sensors

Gallium Oxide: Technology, Devices and Applications

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

ZnO nanowire growth and devices

Dilute magnetic semiconducting oxides

Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Oxygen and zinc vacancies in as-grown ZnO single crystals

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Device processing and junction formation needs for ultra-high power Ga2O3 electronics

Advances in wide bandgap materials for semiconductor spintronics

Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices?

Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

The role of annealing ambient on diffusion of implanted Si in β-Ga2O3

Structure and magnetism of cobalt-doped ZnO thin films

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Movement of basal plane dislocations in GaN during electron beam irradiation

Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition

Hydrogen Sensing Using Pd-Functionalized Multi-Layer Graphene Nanoribbon Networks

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