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Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon

Physica status solidi. PSS-RRL. Rapid research letters, 2016-06, Vol.10 (6), p.443-447

2016

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Characterisation of negative-U defects in semiconductors

Journal of physics. Condensed matter, 2020-07, Vol.32 (32), p.323001

2020

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Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles

physica status solidi (b), 2022-06, Vol.259 (6), p.n/a

2022

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Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon

Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.2844-2849

2016

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Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

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Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

Journal of applied physics, 2019-05, Vol.125 (18)

2019

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Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

Journal of applied physics, 2018-12, Vol.124 (24)

2018

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Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

Journal of applied physics, 2021-12, Vol.130 (24)

2021

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Evidence for Molybdenum‐Hydrogen Bonding in p‐Type Silicon upon Annealing under Illumination

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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Vanadium in silicon: Lattice positions and electronic properties

Applied physics letters, 2017-04, Vol.110 (14)

2017

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On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon

ACS applied materials & interfaces, 2021-02, Vol.13 (5), p.6140-6146

2021

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The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n+–p Diodes upon Irradiation with Alpha Particles

Physica status solidi. A, Applications and materials science, 2021-12, Vol.218 (23), p.n/a

2021

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Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (17), p.n/a

2019

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Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Journal of applied physics, 2018-07, Vol.124 (3)

2018

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Kinetics of Bulk Lifetime Degradation in Float‐Zone Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen versus Light

Physica status solidi. A, Applications and materials science, 2020-09, Vol.217 (17), p.n/a

2020

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Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon

Physica status solidi. A, Applications and materials science, 2022-09, Vol.219 (17), p.n/a

2022

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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

Physica status solidi. A, Applications and materials science, 2021-12, Vol.218 (23), p.n/a

2021

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Interactions of hydrogen with vanadium in crystalline silicon

Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.2838-2843

2016

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Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

IEEE journal of photovoltaics, 2021-01, Vol.11 (1), p.26-35

2021

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Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium

Journal of science. Advanced materials and devices, 2023-12, Vol.8 (4), p.100629, Article 100629

2023

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Molybdenum nano-precipitates in silicon: A TEM and DLTS study

Physica Status Solidi. B: Basic Solid State Physics, 2014-11, Vol.251 (11), p.2201-2204

2014

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Radiation‐induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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