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Surface structure of thin pseudomorphous GeSi layers

Applied surface science, 2015-11, Vol.354, p.450-452

2015

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Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth

Thin solid films, 2014-04, Vol.557, p.188-191

2014

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MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

The Journal of physics and chemistry of solids, 2008-02, Vol.69 (2), p.669-672

2008

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State-of-the-art Architectures and Technologies of High-Efficiency Solar Cells Based on III–V Heterostructures for Space and Terrestrial Applications

Optoelectronics, instrumentation, and data processing, 2018-03, Vol.54 (2), p.187-202

2018

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Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

Journal of crystal growth, , Vol.201-202, p.170-173

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Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.180-183

2002

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Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure Si[O.sub.2]/Si by inelastic electron scattering cross-section spectroscopy

Semiconductors (Woodbury, N.Y.), 2016-03, p.339

2016

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Comparative analysis of characteristic electron energy loss spectra and inelastic scattering cross-section spectra of Fe

Physics of the solid state, 2016-05, Vol.58 (5), p.908-914

2016

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Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Semiconductors (Woodbury, N.Y.), 2018-03, Vol.52 (3), p.390-393

2018

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Ge and GexSi1−x islands formation on GexSi1−x solid solution surface

Thin solid films, 2012-02, Vol.520 (8), p.3319-3321

2012

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Electron spectroscopy of iron disilicide

Technical physics, 2016-09, Vol.61 (9), p.1418-1422

2016

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Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands

Russian physics journal, 2018-03, Vol.60 (11), p.1864-1870

2018

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The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

Thin solid films, 1998-12, Vol.336 (1), p.183-187

1998

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Photoconductivity of Si/Ge/Si structures with 1.5 and 2ML of Ge layer

Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2518-2520

2010

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Inelastic electron scattering cross-section spectroscopy of [Ge.sub.x][Si.sub.1-x] nanoheterostructures

Semiconductors (Woodbury, N.Y.), 2014-02, Vol.48 (2), p.224

2014

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Reflection Electron Energy Loss Spectroscopy of Iron Monosilicide

Russian physics journal, 2017-02, Vol.59 (10), p.1610-1615

2017

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Molecular beam epitaxy of silicon–germanium nanostructures

Thin solid films, 2000-05, Vol.367 (1-2), p.75-84

2000

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Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2518-2520

2010

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The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

Thin solid films, 2008-11, Vol.517 (1), p.69-70

2008

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115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Laser physics letters, 2011-06, Vol.8 (6), p.431-435

2011

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Interband photoconductivity of Ge/Si structures with self-organized quantum rings

Physica. E, Low-dimensional systems & nanostructures, 2009-11, Vol.42 (1), p.22-24

2009

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Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

Russian physics journal, 2011-02, Vol.53 (9), p.943-948

2011

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115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Laser physics letters, 2011-06, Vol.8 (6), p.431-435

2011

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InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates

Russian physics journal, 2014-07, Vol.57 (3), p.359-363

2014

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New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

Technical physics, 2011-09, Vol.56 (9), p.1333-1338

2011

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Surface structure of thin pseudomorphous GeSi layers

Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth

MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

State-of-the-art Architectures and Technologies of High-Efficiency Solar Cells Based on III–V Heterostructures for Space and Terrestrial Applications

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si

Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure Si[O.sub.2]/Si by inelastic electron scattering cross-section spectroscopy

Comparative analysis of characteristic electron energy loss spectra and inelastic scattering cross-section spectra of Fe

Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Ge and GexSi1−x islands formation on GexSi1−x solid solution surface

Electron spectroscopy of iron disilicide

Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands

The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

Photoconductivity of Si/Ge/Si structures with 1.5 and 2ML of Ge layer

Inelastic electron scattering cross-section spectroscopy of [Ge.sub.x][Si.sub.1-x] nanoheterostructures

Reflection Electron Energy Loss Spectroscopy of Iron Monosilicide

Molecular beam epitaxy of silicon–germanium nanostructures

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Interband photoconductivity of Ge/Si structures with self-organized quantum rings

Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates

New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

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