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Correlative light and electron microscopy reveals discrepancy between gold and fluorescence labelling

Journal of microscopy (Oxford), 2017-09, Vol.267 (3), p.309-317

2017

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Studies of implanted boron emitters for solar cell applications

Progress in photovoltaics, 2012-01, Vol.20 (1), p.106-110

2012

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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Applied physics letters, 2004-03, Vol.84 (12), p.2055-2057

2004

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Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T142-T143

2015

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Cardiovascular effects of exogenous adrenomedullin and CGRP in Ramp and Calcrl deficient mice

Peptides (New York, N.Y. : 1980), 2017-02, Vol.88, p.1-7

2017

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Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Applied physics letters, 2005-03, Vol.86 (10), p.101913-101913-3

2005

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Yin-Yang1 Is Required in the Mammalian Oocyte for Follicle Expansion

Biology of reproduction, 2011-04, Vol.84 (4), p.654-663

2011

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Boron diffusion in amorphous silicon and the role of fluorine

Applied physics letters, 2004-05, Vol.84 (21), p.4283-4285

2004

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Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors

IEEE electron device letters, 2007-03, Vol.28 (3), p.198-200

2007

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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Solid-state electronics, 2009-07, Vol.53 (7), p.760-766

2009

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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Accurate electrical activation characterization of CMOS ultra-shallow profiles

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.166-173

2004

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Multi-gate devices for the 32 nm technology node and beyond

Solid-state electronics, 2008-09, Vol.52 (9), p.1291-1296

2008

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Photoluminescence from Si:Er under front and backside excitation

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-04, Vol.81 (1), p.59-61

2001

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Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Applied physics letters, 2007-01, Vol.90 (5), p.054101-054101-3

2007

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Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Applied physics letters, 2007-06, Vol.90 (24)

2007

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Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

Solid-state electronics, 2007-11, Vol.51 (11), p.1432-1436

2007

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Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Applied physics letters, 2005-07, Vol.87 (3), p.031915-031915-3

2005

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Boron pocket and channel deactivation in nMOS transistors with SPER junctions

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.71-77

2006

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Ion implantation as a potential alternative for the formation of Front Surface Fields for IBC silicon solar cells

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.001291-001294

2010

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Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.507-509

2006

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Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors

Applied physics letters, 2007-06, Vol.90 (24), p.241912-241912-3

2007

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Demonstration of Package Level 3D-printed Direct Jet Impingement Cooling applied to High power, Large Die Applications

2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 2020, p.1422-1429

2020

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Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.334-337

2008

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Correlative light and electron microscopy reveals discrepancy between gold and fluorescence labelling

Studies of implanted boron emitters for solar cell applications

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

Cardiovascular effects of exogenous adrenomedullin and CGRP in Ramp and Calcrl deficient mice

Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Yin-Yang1 Is Required in the Mammalian Oocyte for Follicle Expansion

Boron diffusion in amorphous silicon and the role of fluorine

Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Accurate electrical activation characterization of CMOS ultra-shallow profiles

Multi-gate devices for the 32 nm technology node and beyond

Photoluminescence from Si:Er under front and backside excitation

Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Boron pocket and channel deactivation in nMOS transistors with SPER junctions

Ion implantation as a potential alternative for the formation of Front Surface Fields for IBC silicon solar cells

Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors

Demonstration of Package Level 3D-printed Direct Jet Impingement Cooling applied to High power, Large Die Applications

Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

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