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Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Applied physics letters, 2019-08, Vol.115 (8)

2019

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Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

Applied physics letters, 2020-10, Vol.117 (14)

2020

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Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

Optical materials, 2024-03, Vol.149, p.115075, Article 115075

2024

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Instability of structural defects generated by electron irradiation in GaInNAs quantum wells

Journal of luminescence, 2014-10, Vol.154, p.584-586

2014

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On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers

Journal of luminescence, 2013-09, Vol.141, p.67-70

2013

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Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Optical materials, 2017-02, Vol.64, p.361-365

2017

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Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers

Journal of luminescence, 2013-04, Vol.136, p.347-350

2013

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Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation

Semiconductor science and technology, 2013-02, Vol.28 (2), p.25020

2013

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X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

Semiconductor science and technology, 2020-08, Vol.35 (8), p.84001

2020

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Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

Applied physics letters, 2010-05, Vol.96 (19)

2010

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Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Journal of applied physics, 2004-09, Vol.96 (5), p.2576-2579

2004

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Journal of physics. D, Applied physics, 2019-08, Vol.52 (32), p.325105

2019

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1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

Journal of physics. D, Applied physics, 2011-04, Vol.44 (14), p.145104

2011

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On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy

Journal of crystal growth, 2006-12, Vol.297 (1), p.33-37

2006

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The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

Journal of applied physics, 2004-09, Vol.96 (5), p.2909-2913

2004

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GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability

Semiconductor science and technology, 2008-08, Vol.23 (8), p.085022

2008

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1.32-μm GaInNAs-GaAs laser with a low threshold current density

IEEE photonics technology letters, 2002-03, Vol.14 (3), p.275-277

2002

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Nitrogen related vacancies in GaAs based quantum well superlattices

Applied physics letters, 2006-08, Vol.89 (6), p.061903-061903-3

2006

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Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

Applied physics letters, 2003-08, Vol.83 (8), p.1497-1499

2003

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Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.266-269

2006

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Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2005-08, Vol.281 (2), p.249-254

2005

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Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Applied physics letters, 2002-04, Vol.80 (17), p.3054-3056

2002

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Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells

Journal of physics. D, Applied physics, 2006-07, Vol.39 (13), p.2659-2663

2006

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Wavelength stabilized quantum dot lasers for high power applications

Physica Status Solidi (b), 2009-04, Vol.246 (4), p.872-875

2009

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Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

Journal of physics. D, Applied physics, 2005-04, Vol.38 (7), p.985-989

2005

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Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

Instability of structural defects generated by electron irradiation in GaInNAs quantum wells

On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers

Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation

X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Type-II band alignment of low-boron-content BGaN/GaN heterostructures

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy

The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability

1.32-μm GaInNAs-GaAs laser with a low threshold current density

Nitrogen related vacancies in GaAs based quantum well superlattices

Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells

Wavelength stabilized quantum dot lasers for high power applications

Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

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