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The Validation of Various Technological Factors Impact on the Electron Beam Lithography Process

Advances in electrical and electronic engineering, 2021, Vol.19 (2), p.186-191

2021

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High performance optical shutter design with scalable aperture

Bulletin of the Polish Academy of Sciences. Technical sciences, 2021, Vol.69 (5), p.138236-138236

2021

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Qualitative Assessment of the UV Exposition Process Near the Diffraction Limits

Advances in electrical and electronic engineering, 2020-06, Vol.18 (2), p.115-121

2020

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Substrate Effect in Electron Beam Lithography

Advances in electrical and electronic engineering, 2018-06, Vol.16 (2), p.246-252

2018

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Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers

Advances in electrical and electronic engineering, 2019-09, Vol.17 (3), p.374-378

2019

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Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures

Advances in electrical and electronic engineering, 2021-12, Vol.19 (4), p.355-360

2021

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GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1195-1200

2015

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Proximity Effect in Gate Fabrication Using Photolithography Technique

Advances in electrical and electronic engineering, 2017, Vol.15 (2), p.358-364

2017

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Synthesis and Characterization of Ga2O3 and In2O3 Nanowires

Advances in electrical and electronic engineering, 2019-06, Vol.17 (2), p.229-233

2019

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Limitations of optical lithography on non-planar surfaces

Materials science in semiconductor processing, 2022-06, Vol.143, p.106548, Article 106548

2022

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Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts

Advances in electrical and electronic engineering, 2016-06, Vol.14 (2), p.218-222

2016

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Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Journal of Electrical Engineering, 2015-01, Vol.65 (6), p.381-385

2015

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Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Advances in electrical and electronic engineering, 2016-03, Vol.14 (1), p.83-88

2016

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Study of Interface of Ohmic Contacts to AlGaN/GaN Heterostructure

Advances in electrical and electronic engineering, 2016-06, Vol.14 (2), p.212-217

2016

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AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application

Crystal research and technology (1979), 2021-12, Vol.56 (12), p.n/a

2021

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Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks

Applied surface science, 2023-12, Vol.640, p.158325, Article 158325

2023

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The Origin and Influence of Compensatory Current in AlGaN/GaN Type High Electron Mobility Transistor Heterostructures with Two Conducting Channels on the Hall Measurements

Physica status solidi. A, Applications and materials science, 2020-05, Vol.217 (9), p.n/a

2020

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Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures

Applied surface science, 2021-02, Vol.538, p.148189, Article 148189

2021

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The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask

Materials science in semiconductor processing, 2023-12, Vol.168, p.107857, Article 107857

2023

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Self-organization of palladium nanoislands on GaN and Al x Ga 1−x N/GaN heterostructures

Applied surface science, 2017-12, Vol.426, p.123-132

2017

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SbSI Nanosensors: from Gel to Single Nanowire Devices

Nanoscale research letters, 2017-12, Vol.12 (1), p.97-97, Article 97

2017

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MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications

Journal of materials science. Materials in electronics, 2019-02, Vol.30 (4), p.4111-4116

2019

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Study on properties of diamond-like carbon films deposited by RF ICP PECVD method for micro- and optoelectronic applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-10, Vol.296, p.116691, Article 116691

2023

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Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy

Materials science in semiconductor processing, 2019-05, Vol.94, p.57-63

2019

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Self-organization of palladium nanoislands on GaN and AlxGa1−xN/GaN heterostructures

Applied surface science, 2017-12, Vol.426, p.123-132

2017

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The Validation of Various Technological Factors Impact on the Electron Beam Lithography Process

High performance optical shutter design with scalable aperture

Qualitative Assessment of the UV Exposition Process Near the Diffraction Limits

Substrate Effect in Electron Beam Lithography

Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers

Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

Proximity Effect in Gate Fabrication Using Photolithography Technique

Synthesis and Characterization of Ga2O3 and In2O3 Nanowires

Limitations of optical lithography on non-planar surfaces

Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Study of Interface of Ohmic Contacts to AlGaN/GaN Heterostructure

AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application

Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks

The Origin and Influence of Compensatory Current in AlGaN/GaN Type High Electron Mobility Transistor Heterostructures with Two Conducting Channels on the Hall Measurements

Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures

The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask

Self-organization of palladium nanoislands on GaN and Al x Ga 1−x N/GaN heterostructures

SbSI Nanosensors: from Gel to Single Nanowire Devices

MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications

Study on properties of diamond-like carbon films deposited by RF ICP PECVD method for micro- and optoelectronic applications

Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy

Self-organization of palladium nanoislands on GaN and AlxGa1−xN/GaN heterostructures

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