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Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations

Journal of physics. Condensed matter, 2018-06, Vol.30 (25), p.254002-254002

2018

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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Scientific reports, 2019-01, Vol.9 (1), p.202-202, Article 202

2019

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In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.103-106

2011

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On the interface state density at In0.53Ga0.47As/oxide interfaces

Applied physics letters, 2009-11, Vol.95 (20)

2009

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off-State Current Limits of Narrow Bandgap MOSFETs

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2773-2778

Passlack, M.

2006

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IEEE_Xplore

Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

The Journal of chemical physics, 2003-10, Vol.119 (13), p.6719-6728

2003

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An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

IEEE electron device letters, 2012-04, Vol.33 (4), p.501-503

2012

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IEEE_Xplore

Enhancement-Mode GaAs n-Channel MOSFET

IEEE electron device letters, 2006-12, Vol.27 (12), p.959-962

2006

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IEEE_Xplore

Implant-free high-mobility flatband MOSFET: principles of operation

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2454-2459

2006

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IEEE_Xplore

1-μm enhancement mode GaAs N-channel MOSFETs with transconductance exceeding 250 mS/mm

IEEE electron device letters, 2007-02, Vol.28 (2), p.100-102

2007

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Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

Applied physics letters, 1996-02, Vol.68 (8), p.1099-1101

1996

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Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

Applied physics letters, 2003-12, Vol.83 (25), p.5262-5264

2003

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High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates

Journal of crystal growth, 2013-11, Vol.383, p.9-11

2013

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Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Applied physics letters, 2003-05, Vol.82 (18), p.2978-2980

2003

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Growth of heterostructures on InAs for high mobility device applications

Journal of crystal growth, 2013-09, Vol.378, p.117-120

2013

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Ga2O3 films for electronic and optoelectronic applications

Journal of applied physics, 1995-01, Vol.77 (2), p.686-693

1995

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Core-Shell TFET Developments and TFET Limitations

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019, p.1-2

2019

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MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Journal of crystal growth, 2013-07, Vol.374, p.43-48

2013

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Screening of Oxide/GaAs Interfaces for MOSFET Applications

IEEE electron device letters, 2008-11, Vol.29 (11), p.1181-1183

2008

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IEEE_Xplore

Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators

Applied physics letters, 2004-07, Vol.85 (4), p.597-599

2004

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InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1564-1567

2009

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Electrical Properties of \hbox\hbox/ \hbox Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

IEEE electron device letters, 2009-01, Vol.30 (1), p.2-4

2009

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IEEE_Xplore

Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

IEEE electron device letters, 2002-09, Vol.23 (9), p.508-510

2002

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IEEE_Xplore

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

AIP advances, 2014-04, Vol.4 (4), p.047108-047108-9

2014

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Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy

On the interface state density at In0.53Ga0.47As/oxide interfaces

off-State Current Limits of Narrow Bandgap MOSFETs

Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

Enhancement-Mode GaAs n-Channel MOSFET

Implant-free high-mobility flatband MOSFET: principles of operation

1-μm enhancement mode GaAs N-channel MOSFETs with transconductance exceeding 250 mS/mm

Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates

Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Growth of heterostructures on InAs for high mobility device applications

Ga2O3 films for electronic and optoelectronic applications

Core-Shell TFET Developments and TFET Limitations

MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Screening of Oxide/GaAs Interfaces for MOSFET Applications

Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Electrical Properties of \hbox\hbox/ \hbox Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

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