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On the thermal conductivity anisotropy in wurtzite GaN

AIP advances, 2023-09, Vol.13 (9), p.095009-095009-6

2023

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Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

Applied physics letters, 2020-12, Vol.117 (25)

2020

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Dielectric and conducting properties of unintentionally and Sn-doped β-Ga2O3 studied by terahertz spectroscopy

Journal of applied physics, 2020-04, Vol.127 (16)

2020

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Erratum: “Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness” [Appl. Phys. Lett. 117, 252102 (2020)]

Applied physics letters, 2021-05, Vol.118 (18)

2021

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Publisher's Note: “Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness” [Appl. Phys Lett. 117, 252102 (2020)]

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

Applied surface science, 2015-02, Vol.327, p.498-503

2015

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Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.204-211

2020

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Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes

AIP advances, 2019-02, Vol.9 (2), p.025005-025005-6

2019

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Modification of the Surface Properties of AlxGa1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments

ACS omega, 2019-07, Vol.4 (7), p.11760-11769

2019

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Biomolecular gradients via semiconductor gradients: characterization of amino acid adsorption to InxGa1-xN surfaces

ACS applied materials & interfaces, 2013-08, Vol.5 (15), p.7236-7243

2013

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Preface

Journal of crystal growth, 2016-10, Vol.452, p.viii

2016

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Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

Physica status solidi. A, Applications and materials science, 2019-10, Vol.216 (20), p.n/a

2019

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Tuning the biocompatibility of aluminum nitride

Materials letters, 2017-02, Vol.189, p.1-4

2017

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Correction: Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness (vol 117, 252102, 2020)

Applied physics letters, 2021, Vol.118 (10)

2021

Volltextzugriff (PDF)

Erratum: “Phonon-boundary scattering and thermal transport in Al x Ga1 − x N: Effect of layer thickness” [Appl. Phys. Lett. 117 , 252102 (2020)]

Applied physics letters, 2021-05, Vol.118 (18)

2021

Volltextzugriff (PDF)

Publisher's Note: “Phonon-boundary scattering and thermal transport in Al x Ga1− x N: Effect of layer thickness” [Appl. Phys Lett. 117 , 252102 (2020)]

Applied physics letters, 2021-03, Vol.118 (10)

2021

Volltextzugriff (PDF)

Correction: Erratum: “Phonon-boundary scattering and thermal transport in Al x Ga 1− x N: Effect of layer thickness” [Appl. Phys. Lett. 117, 252102 (2020)]

Applied physics letters, 2021, Vol.118 (18)

2021

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Phonon-boundary scattering and thermal transport in Al x Ga1− x N: Effect of layer thickness

Applied physics letters, 2020-12, Vol.117 (25)

2020

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Phonon-boundary scattering and thermal transport in Al x Ga 1-x N: Effect of layer thickness

Applied physics letters, 2020, Vol.117 (25)

2020

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In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching

Langmuir, 2014-03, Vol.30 (8), p.2038-2046

2014

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A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

Journal of Materials Research, 2015-10, Vol.30 (19), p.2859-2870

2015

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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Physica. B, Condensed matter, 2020-02, Vol.579, p.411810, Article 411810

2020

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Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution

Langmuir, 2014-12, Vol.30 (51), p.15477-15485

2014

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Passivation of semipolar (10-1-1) GaN with different organic adsorbates

Materials letters, 2019-02, Vol.236, p.201-204

2019

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Introduction

Journal of materials research, 2015-10, Vol.30 (19), p.2845-2845

2015

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On the thermal conductivity anisotropy in wurtzite GaN

Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

Dielectric and conducting properties of unintentionally and Sn-doped β-Ga2O3 studied by terahertz spectroscopy

Erratum: “Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness” [Appl. Phys. Lett. 117, 252102 (2020)]

Publisher's Note: “Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness” [Appl. Phys Lett. 117, 252102 (2020)]

Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography

Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes

Modification of the Surface Properties of AlxGa1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments

Biomolecular gradients via semiconductor gradients: characterization of amino acid adsorption to InxGa1-xN surfaces

Preface

Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

Tuning the biocompatibility of aluminum nitride

Correction: Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness (vol 117, 252102, 2020)

Erratum: “Phonon-boundary scattering and thermal transport in Al x Ga1 − x N: Effect of layer thickness” [Appl. Phys. Lett. 117 , 252102 (2020)]

Publisher's Note: “Phonon-boundary scattering and thermal transport in Al x Ga1− x N: Effect of layer thickness” [Appl. Phys Lett. 117 , 252102 (2020)]

Correction: Erratum: “Phonon-boundary scattering and thermal transport in Al x Ga 1− x N: Effect of layer thickness” [Appl. Phys. Lett. 117, 252102 (2020)]

Phonon-boundary scattering and thermal transport in Al x Ga1− x N: Effect of layer thickness

Phonon-boundary scattering and thermal transport in Al x Ga 1-x N: Effect of layer thickness

In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution

Passivation of semipolar (10-1-1) GaN with different organic adsorbates

Introduction

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