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A contribution to the theory of beam-induced current characterization of dislocations

Journal of applied physics, 1991-05, Vol.69 (9), p.6387-6393

PASEMANN, L

1991

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Theory of electron-beam-induced current and cathodoluminescence imaging of crystal defects: some new results

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-05, Vol.24 (1), p.15-22

Pasemann, L

1994

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A contribution to the theory of the ebic contrast of lattice defects in semiconductors

Ultramicroscopy, 1981, Vol.6 (3), p.237-250

Pasemann, L.

1981

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A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL technique

Ultramicroscopy, 1986, Vol.19 (1), p.15-22

1986

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On the EBIC contrast of dislocations

Kristall und Technik, 1981, Vol.16 (2), p.147-148

Pasemann, L.

1981

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A non-diagonally screened model potential for semiconductors applied to the band structure calculation of Si

Physica Status Solidi (b), 1977-11, Vol.84 (1), p.175-188

Pasemann, L.

1977

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On the Screening of the Ions in Solids. Band Structure Calculations of Si with Several Screening Variants

physica status solidi (b), 1978-06, Vol.87 (2), p.553-564

Pasemann, L.

1978

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EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Physica status solidi. A, Applied research, 1982-02, Vol.69 (2), p.K199-K203

Pasemann, L.

1982

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Theoretical Investigations of Combined EBIC, LBIC, CL, and PL Experiments. The Information Depth of the PL Signal

Physica status solidi. A, Applied research, 1987-08, Vol.102 (2), p.819-828

1987

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Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

Physica status solidi. A, Applied research, 1987-06, Vol.101 (2), p.611-618

1987

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Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials

Physica status solidi. A, Applied research, 1984-10, Vol.85 (2), p.641-648

1984

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Theoretical description of the external electroluminescence around a single dislocation oriented perpendicular to the surface

Crystal research and technology (1979), 1984, Vol.19 (2), p.195-200

1984

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EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Physica status solidi. A, Applied research, 1982-02, Vol.69 (2), p.K199-K203

Pasemann, L.

1982

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Interpretation of the EBIC contrast of dislocations in silicon

Physica status solidi. A, Applied research, 1982-03, Vol.70 (1), p.197-209

1982

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A contribution to the theory of the EBIC contrast of lattice defects in semiconductors

Ultramicroscopy, 1981, Vol.6 (1), p.237-250

Pasemann, L.

1981

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Band structure calculation of ZnSiP2

physica status solidi (b), 1976-10, Vol.77 (2), p.527-533

1976

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Calculation of spectral density for translational nuclear spin diffusion

Journal of magnetic resonance (1969), 1973-01, Vol.9 (2), p.255-262, Article 255

1973

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On an Approximation for the Energy Gap at Γ of A2 B4 C52 Compounds with Chalcopyrite Structure

physica status solidi (b), 1973-04, Vol.56 (2), p.K69-K73

Pasemann, L.

1973

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On an Approximation for the Energy Gap at Γ of A 2 B 4 C 5 2 Compounds with Chalcopyrite Structure

physica status solidi (b), 1973-04, Vol.56 (2)

Pasemann, L.

1973

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Interpretation of the EBIC contrast of dislocations in silicon

Physica status solidi. A, Applied research, 1982-03, Vol.70 (1), p.197-209

1982

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Band structure calculation of ZnSiP 2

physica status solidi (b), 1976-10, Vol.77 (2), p.527-533

1976

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The influence of the residual impurities (C, O) on the crystal structure of GaAs

Physica status solidi. A, Applied research, 1981-11, Vol.68 (1), p.261-267

1981

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Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

Physica status solidi. A, Applied research, 1983-11, Vol.80 (1), p.135-139

1983

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The influence of the residual impurities (C, O) on the crystal structure of GaAs

Physica status solidi. A, Applied research, 1981-11, Vol.68 (1), p.261-267

1981

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A contribution to the theory of beam-induced current characterization of dislocations

Theory of electron-beam-induced current and cathodoluminescence imaging of crystal defects: some new results

A contribution to the theory of the ebic contrast of lattice defects in semiconductors

A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL technique

On the EBIC contrast of dislocations

A non-diagonally screened model potential for semiconductors applied to the band structure calculation of Si

On the Screening of the Ions in Solids. Band Structure Calculations of Si with Several Screening Variants

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Theoretical Investigations of Combined EBIC, LBIC, CL, and PL Experiments. The Information Depth of the PL Signal

Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials

Theoretical description of the external electroluminescence around a single dislocation oriented perpendicular to the surface

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Interpretation of the EBIC contrast of dislocations in silicon

A contribution to the theory of the EBIC contrast of lattice defects in semiconductors

Band structure calculation of ZnSiP2

Calculation of spectral density for translational nuclear spin diffusion

On an Approximation for the Energy Gap at Γ of A2 B4 C52 Compounds with Chalcopyrite Structure

On an Approximation for the Energy Gap at Γ of A 2 B 4 C 5 2 Compounds with Chalcopyrite Structure

Interpretation of the EBIC contrast of dislocations in silicon

Band structure calculation of ZnSiP 2

The influence of the residual impurities (C, O) on the crystal structure of GaAs

Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

The influence of the residual impurities (C, O) on the crystal structure of GaAs

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