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Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate Stack

IEEE electron device letters, 2013-03, Vol.34 (3), p.348-350

2013

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Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa/Metal-Gate nFinFETs for High-Performance Logic Applications

IEEE electron device letters, 2011-06, Vol.32 (6), p.713-715

2011

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Hafnium oxide gate dielectrics on sulfur-passivated germanium

Applied physics letters, 2006-09, Vol.89 (11), p.112905-112905-3

2006

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(Invited) The Past, Present and Future of High-k/Metal Gates

ECS transactions, 2013-05, Vol.53 (3), p.17-26

2013

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The effect of cosurfactants on sodium dodecyl sulfate micellar structures at a graphite surface

Colloids and surfaces. A, Physicochemical and engineering aspects, 2006-01, Vol.272 (3), p.157-163

2006

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Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2814-2820

2010

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Robotics Based Autonomous Wheelchair Navigation

Journal of communication and computer, 2016-07, Vol.13 (7), p.319-328

Anna Shafer Michael Turney Francisco Ruiz Justin Mabon Vamsi Paruchuri Yu Sun

2016

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Gate Capacitance Reduction Due to the Inversion Layer in High- k/Metal Gate Stacks Within a Subnanometer EOT Regime

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.996-1005

2011

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-$k$/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.061503-061503-8

2011

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The significance of electrokinetic characterization for interpreting interfacial phenomena at planar, macroscopic interfaces

Physical chemistry chemical physics : PCCP, 2005-02, Vol.7 (4), p.678-684

2005

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Detecting Driver Distraction Using Smartphones

2015 IEEE 29th International Conference on Advanced Information Networking and Applications, 2015, p.468-475

2015

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Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates

Jpn J Appl Phys, 2011-05, Vol.50 (5), p.050201-050201-3

2011

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High- k /Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6R), p.61503

2011

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Load Sensitive Energy Efficient Heterogeneous Wireless Networks

2017 UKSim-AMSS 19th International Conference on Computer Modelling & Simulation (UKSim), 2017, p.195-200

Paruchuri, Vamsi K

2017

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A Hierarchical Anonymous Communication Protocol for Sensor Networks

Embedded and Ubiquitous Computing – EUC 2005, 2005, p.1123-1132

2005

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Stateless Adaptive Reliable Broadcast Protocol for Heterogeneous Wireless Networks

2015 IEEE 29th International Conference on Advanced Information Networking and Applications, 2015, p.860-867

2015

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Using Computer Vision Techniques for Parking Space Detection in Aerial Imagery

Advances in Computer Vision, 2019, Vol.944, p.190-204

2019

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High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

ECS transactions, 2008, Vol.16 (4), p.291-305

2008

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Anonymous communication protocol for sensor networks

International journal of wireless and mobile computing, 2009, Vol.3 (4), p.236

2009

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Assessment of Shell Strength During Solidification in the Mold Cracking Simulator (MCS) Test

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2019, Vol.50 (1), p.142-150

2019

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Adsorption Density of Spherical Cetyltrimethylammonium Bromide (CTAB) Micelles at a Silica/Silicon Surface

Applied spectroscopy, 2005-05, Vol.59 (5), p.668-672

2005

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SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2878-2882

2015

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Anonymous Routing for Mobile Wireless Ad Hoc Networks

International journal of distributed sensor networks, 2007-01, Vol.3 (1), p.105-117

2007

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Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices

Thin solid films, 2012-02, Vol.520 (8), p.3149-3154

2012

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Adaptive Preemption of Traffic for Emergency Vehicles

2017 UKSim-AMSS 19th International Conference on Computer Modelling & Simulation (UKSim), 2017, p.45-49

Paruchuri, Vamsi

2017

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Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate Stack

Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa/Metal-Gate nFinFETs for High-Performance Logic Applications

Hafnium oxide gate dielectrics on sulfur-passivated germanium

(Invited) The Past, Present and Future of High-k/Metal Gates

The effect of cosurfactants on sodium dodecyl sulfate micellar structures at a graphite surface

Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks

Robotics Based Autonomous Wheelchair Navigation

Gate Capacitance Reduction Due to the Inversion Layer in High- k/Metal Gate Stacks Within a Subnanometer EOT Regime

Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-$k$/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors

The significance of electrokinetic characterization for interpreting interfacial phenomena at planar, macroscopic interfaces

Detecting Driver Distraction Using Smartphones

Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates

Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High- k /Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Load Sensitive Energy Efficient Heterogeneous Wireless Networks

A Hierarchical Anonymous Communication Protocol for Sensor Networks

Stateless Adaptive Reliable Broadcast Protocol for Heterogeneous Wireless Networks

Using Computer Vision Techniques for Parking Space Detection in Aerial Imagery

High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

Anonymous communication protocol for sensor networks

Assessment of Shell Strength During Solidification in the Mold Cracking Simulator (MCS) Test

Adsorption Density of Spherical Cetyltrimethylammonium Bromide (CTAB) Micelles at a Silica/Silicon Surface

SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition

Anonymous Routing for Mobile Wireless Ad Hoc Networks

Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices

Adaptive Preemption of Traffic for Emergency Vehicles

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