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Polymer of intrinsic microporosity (PIM) based fibrous mat: combining particle filtration and rapid catalytic hydrolysis of chemical warfare agent simulants into a highly sorptive, breathable, and mechanically robust fiber matrix

Materials today advances, 2020-12, Vol.8, p.100085, Article 100085

2020

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Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition

Surface science, 2002-01, Vol.496 (3), p.307-317

2002

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Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

Applied surface science, 2001-09, Vol.181 (1), p.78-93

2001

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Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)

Journal of non-crystalline solids, 1987-12, Vol.97, p.1375-1378

1987

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Formation of Microcrystalline Silicon film by RMS Process

MRS proceedings, 1989, Vol.164, Article 21

1989

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Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD

IEEE electron device letters, 1998-06, Vol.19 (6), p.180-182

1998

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Enhanced mobility top-gate amorphous silicon thin-film transistor with selectively deposited source/drain contacts

IEEE electron device letters, 1992-02, Vol.13 (2), p.80-82

Parsons, G.N.

1992

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Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H)

Journal of non-crystalline solids, 1989-12, Vol.114, p.154-156

1989

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Imperial 'partnership': British colonial development and welfare policy, 1938-1950

Parsons, G.N

1985

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Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks

High Dielectric Constant Materials, p.287-310

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The hidden curriculum of English literature : a sociological analysis

Parsons, G.N

1984

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Annealing of “intrinsic” and photo-induced defects in hydrogenated amorphous silicon

Thin solid films, 1990-12, Vol.193, p.577-587

1990

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Electronic properties of PECVD hydrogenated amorphous silicon with predominantly monohydride bonding deposited at less than 150/spl deg/C

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays, 1995, p.20-23

1995

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Silicon nitride PECVD at low temperature: film properties and plasma analysis

25th Anniversary, IEEE Conference Record - Abstracts. 1998 IEEE International Conference on Plasma Science (Cat. No.98CH36221), 1998, p.215

1998

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Properties of intrinsic and doped a -Si:H deposited by remote plasma enhanced chemical vapor deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1988-05, Vol.6 (3), p.1912-1916

1988

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Dependence of a-Sl:H/Si 3N 4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process

Journal of non-crystalline solids, 1989, Vol.115 (1), p.69-71

1989

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Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature

Journal of non-crystalline solids, 1989-12, Vol.114, p.178-180

1989

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Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process

Journal of non-crystalline solids, 1989-12, Vol.115 (1-3), p.69-71

1989

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Effects of gas additives on the properties of a-Si:H films

Journal of non-crystalline solids, 1989-12, Vol.114, p.193-195

1989

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Ultrafast recombination and trapping in amorphous silicon

Journal of non-crystalline solids, 1989-12, Vol.114, p.573-575

1989

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Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition

Journal of non-crystalline solids, 1989, Vol.107 (2), p.295-300

1989

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Photoelectronic properties of a -Si:H and a -Ge:H thin films in surface cell structures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1987-07, Vol.5 (4), p.1655-1660

1987

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Raman scattering from microcrystalline Si films: Considerations of composite structures with different optical absorption properties

Journal of non-crystalline solids, 1989-12, Vol.114, p.813-815

1989

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Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties

MRS proceedings, 1989, Vol.164, Article 265

1989

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Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

Journal of non-crystalline solids, 1989-12, Vol.114, p.579-581

1989

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Polymer of intrinsic microporosity (PIM) based fibrous mat: combining particle filtration and rapid catalytic hydrolysis of chemical warfare agent simulants into a highly sorptive, breathable, and mechanically robust fiber matrix

Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)

Formation of Microcrystalline Silicon film by RMS Process

Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD

Enhanced mobility top-gate amorphous silicon thin-film transistor with selectively deposited source/drain contacts

Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H)

Imperial 'partnership': British colonial development and welfare policy, 1938-1950

Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks

The hidden curriculum of English literature : a sociological analysis

Annealing of “intrinsic” and photo-induced defects in hydrogenated amorphous silicon

Electronic properties of PECVD hydrogenated amorphous silicon with predominantly monohydride bonding deposited at less than 150/spl deg/C

Silicon nitride PECVD at low temperature: film properties and plasma analysis

Properties of intrinsic and doped a -Si:H deposited by remote plasma enhanced chemical vapor deposition

Dependence of a-Sl:H/Si 3N 4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process

Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature

Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process

Effects of gas additives on the properties of a-Si:H films

Ultrafast recombination and trapping in amorphous silicon

Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition

Photoelectronic properties of a -Si:H and a -Ge:H thin films in surface cell structures

Raman scattering from microcrystalline Si films: Considerations of composite structures with different optical absorption properties

Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties

Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

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