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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.374-377

2014

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Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2220-2223

2012

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A HfO2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.37-40

2012

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Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

Applied physics letters, 1982-02, Vol.40 (4), p.342-344

1982

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Intracenter transitions in the dominant deep level (EL2) in GaAs

Applied physics letters, 1983-08, Vol.43 (3), p.302-304

1983

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A metallurgical assessment of SnPbAg solder for GaAs power devices

JOM (1989), 1999-03, Vol.51 (3), p.28-31

1999

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Diffuse scattering from the icosahedral phase alloys

Physical review letters, 1988-10, Vol.61 (17), p.1962-1965

1988

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Donor identification in bulk gallium arsenide

Applied physics letters, 1988-02, Vol.52 (5), p.389-391

1988

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Morphology and microstructure of Al-Li-Cu quasicrystals

Journal of materials science, 1989-06, Vol.24 (6), p.1999-2005

1989

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Control of EL2 concentration and dislocation density in liquid encapsulated Czochralski-grown GaAs using laser processing

Journal of physics. D, Applied physics, 1992-10, Vol.25 (10), p.1538-1544

1992

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UltiMOS: A local charge-balanced trench-based 600V super-junction device

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.304-307

2011

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Epitaxy: The key to high-performance semiconductor devices

JOM (1989), 1995-12, Vol.47 (12), p.24-24

Parsey, John M.

1995

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High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012, p.306-309

2012

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Czochralski growth and characterization of GaSb

Journal of crystal growth, 1986, Vol.78 (1), p.9-18

1986

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Investigation of SnPbAg solder for die attach of GaAs devices

Journal of electronic materials, 1996-11, Vol.25 (11), p.1715-1724

1996

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Current oscillations in semi-insulating GaAs associated with field-enhanced capture of electrons by the major deep donor EL2

Applied physics letters, 1982-11, Vol.41 (10), p.989-991

1982

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Passivation of the dominant deep level (EL2) in GaAs by hydrogen

Applied physics letters, 1982-12, Vol.41 (11), p.1078-1080

1982

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Real and apparent effects of strong electric fields on the electron emission from midgap levels EL2 and EL0 in GaAs

Applied physics letters, 1984-07, Vol.45 (1), p.89-91

1984

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A new apparatus for the controlled growth of single crystals by horizontal Bridgman techniques

Journal of crystal growth, 1985-01, Vol.73 (2), p.211-220

1985

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The impact of various annealing methods on silicon implant activation properties for GaAs crystals

Journal of applied physics, 1989-07, Vol.66 (1), p.137-140

1989

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Control of sidegating effects in AlGaAs/GaAs heterostructure field-effect transistors by modification of GaAs wafer surfaces

Journal of applied physics, 1990-07, Vol.68 (1), p.169-175

1990

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Microscale phenomena in bulk GaAs crystals: The effect of thermal gradients

Journal of crystal growth, 1987-11, Vol.85 (3), p.327-334

1987

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Organic-on-GaAs contact barrier diodes

Journal of applied physics, 1985-07, Vol.58 (2), p.867-870

1985

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Sidegating in a GaAs MBE-grown HFET structure

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.51-57

1990

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EL2 distributions in vertical gradient freeze GaAs crystals

Journal of applied physics, 1988-06, Vol.63 (12), p.5689-5693

1988

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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

A HfO2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology

Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

Intracenter transitions in the dominant deep level (EL2) in GaAs

A metallurgical assessment of SnPbAg solder for GaAs power devices

Diffuse scattering from the icosahedral phase alloys

Donor identification in bulk gallium arsenide

Morphology and microstructure of Al-Li-Cu quasicrystals

Control of EL2 concentration and dislocation density in liquid encapsulated Czochralski-grown GaAs using laser processing

UltiMOS: A local charge-balanced trench-based 600V super-junction device

Epitaxy: The key to high-performance semiconductor devices

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C

Czochralski growth and characterization of GaSb

Investigation of SnPbAg solder for die attach of GaAs devices

Current oscillations in semi-insulating GaAs associated with field-enhanced capture of electrons by the major deep donor EL2

Passivation of the dominant deep level (EL2) in GaAs by hydrogen

Real and apparent effects of strong electric fields on the electron emission from midgap levels EL2 and EL0 in GaAs

A new apparatus for the controlled growth of single crystals by horizontal Bridgman techniques

The impact of various annealing methods on silicon implant activation properties for GaAs crystals

Control of sidegating effects in AlGaAs/GaAs heterostructure field-effect transistors by modification of GaAs wafer surfaces

Microscale phenomena in bulk GaAs crystals: The effect of thermal gradients

Organic-on-GaAs contact barrier diodes

Sidegating in a GaAs MBE-grown HFET structure

EL2 distributions in vertical gradient freeze GaAs crystals

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