UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The effects of boron penetration on p+ polysilicon gated PMOS devices

IEEE transactions on electron devices, 1990-08, Vol.37 (8), p.1842-1851

1990

Volltextzugriff (PDF)

Poly-gate sidewall oxidation induced submicrometer MOSFET degradation

IEEE electron device letters, 1989-08, Vol.10 (8), p.367-369

1989

Volltextzugriff (PDF)

Disposable polysilicon LDD spacer technology

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.39-46

1991

Volltextzugriff (PDF)

An advanced 0.5- mu m CMOS disposable TiN LDD/salicide spacer process

IEEE electron device letters, 1990-07, Vol.11 (7), p.318-320

1990

Volltextzugriff (PDF)

A high-performance half-micrometer generation CMOS technology for fast SRAMs

IEEE transactions on electron devices, 1991-04, Vol.38 (4), p.876-886

1991

Volltextzugriff (PDF)

A physical model for boron penetration through thin gate oxides from p+ polysilicon gates

IEEE electron device letters, 1990-06, Vol.11 (6), p.247-249

1990

Volltextzugriff (PDF)

In‐Source Al‐0.5%Cu Metallization for CMOS Devices

Journal of the Electrochemical Society, 1985-01, Vol.132 (1), p.159-168

1985

Volltextzugriff (PDF)

A novel dual p-/p+ poly gate CMOS VLSI technology

IEEE transactions on electron devices, 1988-08, Vol.35 (8), p.1305-1310

1988

Volltextzugriff (PDF)

The effect of biased spacers on LDD MOSFET behavior

IEEE electron device letters, 1991-10, Vol.12 (10), p.542-545

1991

Volltextzugriff (PDF)

Deleterious effects of an oxidizing drive-in ambient on implanted arsenic emitters in 〈111〉 silicon

Applied physics letters, 1979-08, Vol.35 (4), p.345-347

1979

Volltextzugriff (PDF)

The reduction of emitter-collector shorts in a high-speed all-implanted bipolar technology

IEEE transactions on electron devices, 1981-12, Vol.28 (12), p.1508-1514

1981

Volltextzugriff (PDF)

A novel dual p super(-)/p super(+) poly gate CMOS VLSI technology

IEEE transactions on electron devices, 1988-01, Vol.35 (8), p.1305-1310

1988

Volltextzugriff (PDF)

A physical model for boron penetration through thin gate oxidesfrom p(+) polysilicon gates

IEEE electron device letters, 1990-06, Vol.11 (6), p.247-249

1990

Volltextzugriff (PDF)

A physical model for boron penetration through thin gate oxides from p super(+) polysilicon gates

IEEE electron device letters, 1990-01, Vol.11 (6), p.247-249

1990

Volltextzugriff (PDF)

An advanced 0.5-mu m CMOS disposable TiN LDD/salicide spacerprocess

IEEE electron device letters, 1990-07, Vol.11 (7), p.318-320

1990

Volltextzugriff (PDF)

The effects of boron penetration on p(+) polysilicon gatedPMOS devices

IEEE transactions on electron devices, 1990-08, Vol.37 (8), p.1842-1851

1990

Volltextzugriff (PDF)

The effects of boron penetration on p super(+) polysilicon gated PMOS devices

IEEE transactions on electron devices, 1990-01, Vol.37 (8), p.1842-1851

1990

Volltextzugriff (PDF)

IEDM - a view as a participant and a customer

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.3-10

Parillo, L.C.

2004

Volltextzugriff (PDF)

An integrated 0.5 mu m CMOS disposable TiN LDD/salicide spacer technology

International Technical Digest on Electron Devices Meeting, 1989, p.781-784

1989

Volltextzugriff (PDF)

Twin-tub CMOS - A technology for VLSI circuits

1980 International Electron Devices Meeting, 1980, p.752-755

1980

Volltextzugriff (PDF)

Acceptor State of Gold in Silicon—Resolution of an Anomaly

Applied physics letters, 1972-01, Vol.20 (3), p.104-106

1972

Volltextzugriff (PDF)

A scalable submicron contact technology using conformal LPCVD TiN

International Technical Digest on Electron Devices, 1990, p.47-50

1990

Volltextzugriff (PDF)

Molecular basis of ageing in chronic metabolic diseases

Journal of endocrinological investigation, 2020-10, Vol.43 (10), p.1373-1389

2020

Volltextzugriff (PDF)

Early microcirculatory perfusion derangements in patients with severe sepsis and septic shock: Relationship to hemodynamics, oxygen transport, and survival

Annals of emergency medicine, 2007, Vol.49 (1), p.88-98.e2

2007

Volltextzugriff (PDF)

Early increases in microcirculatory perfusion during protocol-directed resuscitation are associated with reduced multi-organ failure at 24 h in patients with sepsis

Intensive care medicine, 2008-12, Vol.34 (12), p.2210-2217

2008

Volltextzugriff (PDF)

1 – 25 von 121

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(108)
Mit Volltextzugriff
(93)

Publikationsform

Sprache

Englisch
(121)

Erscheinungsjahr

n.n

Thema

Science & Technology
(62)
Life Sciences & Biomedicine
(50)
Biological And Medical Sciences
(38)
Humans
(38)
Medical Sciences
(34)
Animals
(24)
Male
(22)
General & Internal Medicine
(18)
Aids/hiv
(13)
Adult
(12)
Dogs
(12)
Female
(12)
Middle Aged
(12)
Technology
(12)
Anesthesia. Intensive Care Medicine. Transfusions. Cell Therapy And Gene Therapy
(11)
Engineering
(11)
Exact Sciences And Technology
(11)
Intensive Care Medicine
(11)
Shock, Septic - Physiopathology
(11)
Engineering, Electrical & Electronic
(10)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

The effects of boron penetration on p+ polysilicon gated PMOS devices

Poly-gate sidewall oxidation induced submicrometer MOSFET degradation

Disposable polysilicon LDD spacer technology

An advanced 0.5- mu m CMOS disposable TiN LDD/salicide spacer process

A high-performance half-micrometer generation CMOS technology for fast SRAMs

A physical model for boron penetration through thin gate oxides from p+ polysilicon gates

In‐Source Al‐0.5%Cu Metallization for CMOS Devices

A novel dual p-/p+ poly gate CMOS VLSI technology

The effect of biased spacers on LDD MOSFET behavior

Deleterious effects of an oxidizing drive-in ambient on implanted arsenic emitters in 〈111〉 silicon

The reduction of emitter-collector shorts in a high-speed all-implanted bipolar technology

A novel dual p super(-)/p super(+) poly gate CMOS VLSI technology

A physical model for boron penetration through thin gate oxidesfrom p(+) polysilicon gates

A physical model for boron penetration through thin gate oxides from p super(+) polysilicon gates

An advanced 0.5-mu m CMOS disposable TiN LDD/salicide spacerprocess

The effects of boron penetration on p(+) polysilicon gatedPMOS devices

The effects of boron penetration on p super(+) polysilicon gated PMOS devices

IEDM - a view as a participant and a customer

An integrated 0.5 mu m CMOS disposable TiN LDD/salicide spacer technology

Twin-tub CMOS - A technology for VLSI circuits

Acceptor State of Gold in Silicon—Resolution of an Anomaly

A scalable submicron contact technology using conformal LPCVD TiN

Molecular basis of ageing in chronic metabolic diseases

Early microcirculatory perfusion derangements in patients with severe sepsis and septic shock: Relationship to hemodynamics, oxygen transport, and survival

Early increases in microcirculatory perfusion during protocol-directed resuscitation are associated with reduced multi-organ failure at 24 h in patients with sepsis

Suchergebnisse filtern