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VHDL-AMS Modeling of Total Ionizing Dose Radiation Effects on CMOS Mixed Signal Circuits

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.929-934

2007

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SET tolerant CMOS comparator

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3609-3614

2004

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Hafnium or zirconium high-k fab cross-contamination issues

IEEE transactions on semiconductor manufacturing, 2004-11, Vol.17 (4), p.582-589

2004

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The effect of copper contamination on field overlap edges and perimeter junction leakage current

IEEE transactions on semiconductor manufacturing, 1998-05, Vol.11 (2), p.232-238

1998

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Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.877-889

2010

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Advanced CMOS Process Technology

Pimbley, J

1, 1989

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Quantifying the impact of homogeneous metal contamination using test structure metrology and device modeling

IEEE transactions on semiconductor manufacturing, 1994-08, Vol.7 (3), p.249-258

1994

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The influence of copper contamination on gate oxide integrity

1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings, 1997, p.30-32

1997

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The effect of hafnium or zirconium contamination on MOS processes

13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259), 2002, p.299-303

2002

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A model for outgassing of organic contamination from wafer carrier boxes

13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259), 2002, p.314-318

2002

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Mechanistic Study of the Deposition of Metals from HF Solutions onto Silicon Wafers

MRS proceedings, 1993, Vol.318, Article 245

1993

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Multi-step process control and characterization of scanning probe lithography

Applied physics. A, Materials science & processing, 1998-03, Vol.66 (7), p.S729-S733

1998

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The influence of the pre-anneal ambient on the gate oxide integrity effect of copper contamination

2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 2000 (Cat. No.00CH37072), 2000, p.367-371

2000

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Fast turn around post process yield enhancement for custom VLSI foundries

IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop, 1990, p.82-87

Parks, H.G.

1990

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Concept and initial feasibility of contamination TCAD by integration with commercial software

10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295), 1999, p.426-429

1999

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Total dose radiation effect simulations on a high-precision data acquisition system

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007, p.1-6

2007

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The nature of defect size distributions in semiconductor processes

IEEE/SEMI International Semiconductor Manufacturing Science Symposium, 1989, p.131-135

1989

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The nature of defect size distributions in semiconductor processes

IEEE/SEMI International Semiconductor Manufacturing Science Symposium, 1989, p.66

1989

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Yield modeling from SRAM failure analysis

International Conference on Microelectronic Test Structures, 1990, p.169-174

Parks, H.G.

1990

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Research accomplishments at the University of Arizona SEMATECH Center of Excellence for contamination/defect assessment and control

IEEE transactions on semiconductor manufacturing, 1993-05, Vol.6 (2), p.134-142

1993

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CHARACTERISTICS OF P+N ALLOY JUNCTIONS PRODUCED BY SINGLE LASER PULSES

Laser and Electron Beam Processing of Materials, 1980, p.549-555

1980

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Research accomplishments at the University of Arizona SEMATECH Center of Excellence for contamination/defect assessment and control

[1991 Proceedings] IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 1991, p.9-16

1991

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Transient Annealing of Ion-Implanted Silicon Using A Scanning IR Line Source

MRS proceedings, 1982, Vol.13, Article 425

1982

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Threshold voltage shift caused by copper contamination

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296), 1999, p.315-318

1999

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MOSFET's fabricated in laser-recrystallized Silicon on Quartz using selectively absorbing dielectrical layers

IEEE transactions on electron devices, 1984-01, Vol.31 (1), p.68-74

1984

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VHDL-AMS Modeling of Total Ionizing Dose Radiation Effects on CMOS Mixed Signal Circuits

SET tolerant CMOS comparator

Hafnium or zirconium high-k fab cross-contamination issues

The effect of copper contamination on field overlap edges and perimeter junction leakage current

Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films

Advanced CMOS Process Technology

Quantifying the impact of homogeneous metal contamination using test structure metrology and device modeling

The influence of copper contamination on gate oxide integrity

The effect of hafnium or zirconium contamination on MOS processes

A model for outgassing of organic contamination from wafer carrier boxes

Mechanistic Study of the Deposition of Metals from HF Solutions onto Silicon Wafers

Multi-step process control and characterization of scanning probe lithography

The influence of the pre-anneal ambient on the gate oxide integrity effect of copper contamination

Fast turn around post process yield enhancement for custom VLSI foundries

Concept and initial feasibility of contamination TCAD by integration with commercial software

Total dose radiation effect simulations on a high-precision data acquisition system

The nature of defect size distributions in semiconductor processes

The nature of defect size distributions in semiconductor processes

Yield modeling from SRAM failure analysis

Research accomplishments at the University of Arizona SEMATECH Center of Excellence for contamination/defect assessment and control

CHARACTERISTICS OF P+N ALLOY JUNCTIONS PRODUCED BY SINGLE LASER PULSES

Research accomplishments at the University of Arizona SEMATECH Center of Excellence for contamination/defect assessment and control

Transient Annealing of Ion-Implanted Silicon Using A Scanning IR Line Source

Threshold voltage shift caused by copper contamination

MOSFET's fabricated in laser-recrystallized Silicon on Quartz using selectively absorbing dielectrical layers

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