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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Microelectronic engineering, 2009-03, Vol.86 (3), p.218-223

2009

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Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

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On the practical applications of MBE surface phase diagrams

Journal of crystal growth, 1987-02, Vol.81 (1), p.49-54

1987

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Preface

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.1

2002

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Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

2000

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RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.878-881

2006

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Preface

Journal of crystal growth, 1995-12, Vol.157 (1-4), p.ix

1995

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Applied surface science, 2004, Vol.224 (1), p.265-269

2004

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XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.123-126

2005

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SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

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SiGe heterostructure CMOS circuits and applications

Solid-state electronics, 1999-08, Vol.43 (8), p.1497-1506

1999

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The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Application of high-resolution X-ray diffraction to study strain status in Si1−Ge /Si1−Ge /Si (001) heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91-92, p.453-456

2002

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Application of high-resolution X-ray diffraction to study strain status in Si 1− xGe x/Si 1− yGe y/Si (001) heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.91, p.453-456

2002

Volltextzugriff (PDF)

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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Evidence of reduced self-heating in strained Si MOSFETs

SiGe(C) epitaxial technologies—issues and prospectives

Superconducting platinum silicide for electron cooling in silicon

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

On the practical applications of MBE surface phase diagrams

Improved effective mobility extraction in MOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Preface

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications

Preface

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

SiGe : heterostructures for CMOS technology

SiGe heterostructure CMOS circuits and applications

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Impact ionisation in strained SiGe pMOSFETs

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Application of high-resolution X-ray diffraction to study strain status in Si1−Ge /Si1−Ge /Si (001) heterostructures

Application of high-resolution X-ray diffraction to study strain status in Si 1− xGe x/Si 1− yGe y/Si (001) heterostructures

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